F. Abbate

606 total citations
10 papers, 34 citations indexed

About

F. Abbate is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, F. Abbate has authored 10 papers receiving a total of 34 indexed citations (citations by other indexed papers that have themselves been cited), including 9 papers in Electrical and Electronic Engineering, 3 papers in Atomic and Molecular Physics, and Optics and 1 paper in Computational Mechanics. Recurrent topics in F. Abbate's work include Semiconductor materials and devices (6 papers), Thin-Film Transistor Technologies (6 papers) and Advancements in Semiconductor Devices and Circuit Design (4 papers). F. Abbate is often cited by papers focused on Semiconductor materials and devices (6 papers), Thin-Film Transistor Technologies (6 papers) and Advancements in Semiconductor Devices and Circuit Design (4 papers). F. Abbate collaborates with scholars based in France, Czechia and United States. F. Abbate's co-authors include M. Juhel, Olivier Gourhant, F. Bertin, E. Blanquet, Nicolas Laurent, Matthew Wormington, Christophe Delerue, D. Rideau, Alexandre Pofelski and Y. Campidelli and has published in prestigious journals such as Journal of Applied Physics, Solid-State Electronics and Microelectronic Engineering.

In The Last Decade

F. Abbate

8 papers receiving 31 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
F. Abbate France	4	30	11	8	5	2	10	34
D. Bender Türkiye	2	23 0.8×	6 0.5×	7 0.9×	6 1.2×	4 2.0×	3	28
Erik Haralson Sweden	4	34 1.1×	8 0.7×	7 0.9×	8 1.6×	1 0.5×	8	36
C. Kim South Korea	2	35 1.2×	6 0.5×	5 0.6×	6 1.2×	1 0.5×	3	36
S. Luning United States	5	43 1.4×	15 1.4×	8 1.0×	7 1.4×	5 2.5×	9	43
L. Clement France	3	30 1.0×	5 0.5×	9 1.1×	5 1.0×		4	30
Zheng Tao Belgium	4	39 1.3×	4 0.4×	13 1.6×	6 1.2×	1 0.5×	11	43
R. Chao United States	3	36 1.2×	14 1.3×	12 1.5×	3 0.6×		5	40
H. Qu China	4	17 0.6×	8 0.7×	4 0.5×	3 0.6×	1 0.5×	5	24
K. Ranjan India	3	28 0.9×	5 0.5×	10 1.3×	5 1.0×		6	35
M. Rashed United States	6	61 2.0×	13 1.2×	4 0.5×	8 1.6×		19	68

Countries citing papers authored by F. Abbate

Since Specialization

Citations

This map shows the geographic impact of F. Abbate's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Abbate with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Abbate more than expected).

Fields of papers citing papers by F. Abbate

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Abbate. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Abbate. The network helps show where F. Abbate may publish in the future.

Co-authorship network of co-authors of F. Abbate

This figure shows the co-authorship network connecting the top 25 collaborators of F. Abbate. A scholar is included among the top collaborators of F. Abbate based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Abbate. F. Abbate is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

10 of 10 papers shown

1.

Gergaud, Patrice, Nicolas Jaouen, Olivier Gourhant, et al.. (2017). SiGe oxidation kinetics and oxide density measured by resonant soft X-ray reflectivity. 177–178.

2.

Gourhant, Olivier, et al.. (2017). Oxidation kinetics of Si and SiGe by dry rapid thermal oxidation, in-situ steam generation oxidation and dry furnace oxidation. Journal of Applied Physics. 121(24). 11 indexed citations

3.

Gourhant, Olivier, et al.. (2016). Comparative Analysis of Growth Rate Enhancement and Ge Redistribution during Silicon-Germanium Oxidation by Rapid Thermal Oxidation. ECS Transactions. 75(8). 67–78. 6 indexed citations

4.

Triozon, François, Christophe Delerue, Lutz Schneider, et al.. (2016). Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements. Solid-State Electronics. 129. 93–96. 2 indexed citations

5.

Schneider, Lutz, et al.. (2015). Optical properties determination of Fully Depleted Silicon On Insulator (FDSOI) substrates by ellipsometry. 195–200. 1 indexed citations

6.

Abbate, F., et al.. (2014). Benefit of combining metrology techniques for thin SiGe:B layers. 8. 31–36.

7.

Gourhant, Olivier, D. Barge, V. Mazzocchi, et al.. (2014). Ge Condensation Using Rapid Thermal Oxidation for SGOI Substrate Preparation. ECS Transactions. 64(6). 469–478. 3 indexed citations

8.

Abbate, F., et al.. (2014). Combining metrology techniques for in-line control of thin SiGe:B layers. Journal of Micro/Nanolithography MEMS and MOEMS. 13(4). 41402–41402. 7 indexed citations

9.

Leroux, Cédric, D. Rideau, A. Toffoli, et al.. (2013). Understanding Ge impact on VT and VFB in Si1−xGex/Si pMOSFETs. Microelectronic Engineering. 109. 282–285. 2 indexed citations

10.

Abbate, F., et al.. (2012). In-line metrology capability for epitaxial multi-stack SiGe layers. 357. 115–121. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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