M. Bidaud

548 total citations
19 papers, 96 citations indexed

About

M. Bidaud is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. Bidaud has authored 19 papers receiving a total of 96 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 2 papers in Atomic and Molecular Physics, and Optics and 2 papers in Materials Chemistry. Recurrent topics in M. Bidaud's work include Semiconductor materials and devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). M. Bidaud is often cited by papers focused on Semiconductor materials and devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). M. Bidaud collaborates with scholars based in France, India and Switzerland. M. Bidaud's co-authors include F. Arnaud, D. Barge, Christophe Raynaud, F. Mart́ınez, Emmanuel Vincent, Pascal Le Masson, A. Poncet, F. Cacho, D. Mathiot and K. Barla and has published in prestigious journals such as Journal of Non-Crystalline Solids, Materials Science and Engineering B and Microelectronics Reliability.

In The Last Decade

M. Bidaud

19 papers receiving 89 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M. Bidaud France	6	89	12	10	7	6	19	96
S. Luning United States	5	43 0.5×	15 1.3×	7 0.7×	5 0.7×	8 1.3×	9	43
C. Weintraub United States	6	101 1.1×	11 0.9×	7 0.7×	12 1.7×	6 1.0×	13	107
P. Moll Germany	4	52 0.6×	8 0.7×	20 2.0×	3 0.4×	7 1.2×	5	59
M. Inoue Japan	5	69 0.8×	13 1.1×	20 2.0×	3 0.4×	9 1.5×	12	85
S. Mehta United States	5	79 0.9×	4 0.3×	11 1.1×	3 0.4×	10 1.7×	26	83
A. Margain France	4	73 0.8×	8 0.7×	4 0.4×	2 0.3×	9 1.5×	6	78
L. Pasini France	3	47 0.5×	8 0.7×	12 1.2×	4 0.6×	11 1.8×	4	50
D. Mcdonald Australia	2	38 0.4×	16 1.3×	12 1.2×	3 0.4×	4 0.7×	2	42
H. Schroeder Germany	4	38 0.4×	10 0.8×	3 0.3×	4 0.6×	7 1.2×	8	45
P. Saunders United States	4	118 1.3×	10 0.8×	9 0.9×	2 0.3×	34 5.7×	8	130

Countries citing papers authored by M. Bidaud

Since Specialization

Citations

This map shows the geographic impact of M. Bidaud's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Bidaud with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Bidaud more than expected).

Fields of papers citing papers by M. Bidaud

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Bidaud. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Bidaud. The network helps show where M. Bidaud may publish in the future.

Co-authorship network of co-authors of M. Bidaud

This figure shows the co-authorship network connecting the top 25 collaborators of M. Bidaud. A scholar is included among the top collaborators of M. Bidaud based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Bidaud. M. Bidaud is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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19 of 19 papers shown

Gourhant, Olivier, D. Barge, V. Mazzocchi, et al.. (2014). Ge Condensation Using Rapid Thermal Oxidation for SGOI Substrate Preparation. ECS Transactions. 64(6). 469–478. 3 indexed citations

Lefranc, Michel, Johann Peltier, M. Bidaud, & Thierry Reix. (2009). Anévrisme tuberculeux de l’aorte abdominale : cas clinique et revue de la littérature. La Revue de Médecine Interne. 30(7). 625–627. 5 indexed citations

Morin, P., F. Cacho, R. Beneyton, et al.. (2009). Managing annealing pattern effects in 45nm low power CMOS technology. 143. 288–291. 3 indexed citations

Morin, P., F. Cacho, R. Beneyton, et al.. (2008). Simulation of the sub-melt laser anneal process in 45 CMOS technology—Application to the thermal pattern effects. Materials Science and Engineering B. 154-155. 31–34. 13 indexed citations

Bidaud, M., B. Dumont, V. Huard, et al.. (2007). High-Activation Laser Anneal Process for the 45nm CMOS Technology Platform. 251–256. 5 indexed citations

Denais, M., A. Bravaix, V. Huard, et al.. (2005). New hole trapping characterization during NBTI in 65nm node technology with distinct nitridation processing. 24. 121–124. 7 indexed citations

Mart́ınez, F., C. Leyris, M. Valenza, et al.. (2005). Oxide traps characterization of 45 nm MOS transistors by gate current R.T.S. noise measurements. Microelectronic Engineering. 80. 54–57. 19 indexed citations

Ghibaudo, G., et al.. (2004). Stress-induced leakage current at low field in NMOS and PMOS devices with ultra-thin nitrided gate oxide. Microelectronic Engineering. 72(1-4). 241–246. 5 indexed citations

Barge, D., et al.. (2004). Anticipation of nitrided oxides electrical thickness based on XPS measurement. Materials Science in Semiconductor Processing. 7(4-6). 181–183. 7 indexed citations

10.

Duriez, B., Pascal Morin, B. Tavel, et al.. (2004). Low temperature process flow optimisation for 65nm CMOS mixed-signal applications. 197–200. 1 indexed citations

11.

Petit, C., et al.. (2003). Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices. Microelectronics Reliability. 43(9-11). 1433–1438. 2 indexed citations

12.

Grouillet, A., et al.. (2002). Triple Gate Oxide by Nitrogen Implantation Integrated in a 0.13um CMOS Flow. 155–158. 1 indexed citations

13.

Bidaud, M., et al.. (2002). Thermal Nitridation of Chemical Dielectrics as an Easy Approach to Ultra-thin Gate Oxide Processing. 163–166. 2 indexed citations

14.

Müller, Markus, M. Bidaud, F. Bœuf, et al.. (2002). Advanced Junction Engineering for 60nm-CMOS Transistors. 48. 315–318. 3 indexed citations

15.

Arnaud, F. & M. Bidaud. (2002). Gate Oxide Process Impact on RNCE for Advanced CMOS Transistors. 107–110. 4 indexed citations

16.

Bidaud, M., et al.. (2001). 1.5–2.5 nm RTP gate oxides: process feasibility, properties and limitations. Journal of Non-Crystalline Solids. 280(1-3). 32–38. 2 indexed citations

17.

Bidaud, M., et al.. (2000). Ultra-Thin Gate Oxide (1.6 nm): New Mechanisms of Plasma Induced Damage and Oxidation Process Optimisation. 532–535. 2 indexed citations

18.

Bidaud, M., F. Arnaud, J.L. Autran, & K. Barla. (2000). Complete re-estimation of the gate leakage current limit for sub-0.12um technologies (EOT= 1.8-2.8nm). 304–307. 1 indexed citations

19.

Raynaud, Christophe, Jean‐Luc Autran, Pascal Le Masson, M. Bidaud, & A. Poncet. (1999). Analysis of MOS Device Capacitance-Voltage Characteristics Based on the Self-Consistent Solution of the Schrödinger and Poisson Equations. MRS Proceedings. 592. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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