F. Allibert

1.3k total citations
69 papers, 736 citations indexed

About

F. Allibert is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, F. Allibert has authored 69 papers receiving a total of 736 indexed citations (citations by other indexed papers that have themselves been cited), including 67 papers in Electrical and Electronic Engineering, 12 papers in Biomedical Engineering and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in F. Allibert's work include Semiconductor materials and devices (48 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers) and Integrated Circuits and Semiconductor Failure Analysis (21 papers). F. Allibert is often cited by papers focused on Semiconductor materials and devices (48 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers) and Integrated Circuits and Semiconductor Failure Analysis (21 papers). F. Allibert collaborates with scholars based in France, Belgium and Germany. F. Allibert's co-authors include S. Cristoloveanu, Jean‐Pierre Raskin, Martin Rack, F. Letertre, C. Deguet, Benjamin J. Blalock, C. Richtarch, N. Kernevez, Thomas Signamarcheix and V. Loup and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

F. Allibert

64 papers receiving 722 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Allibert France 15 717 176 134 94 22 69 736
M. Racanelli United States 16 772 1.1× 107 0.6× 135 1.0× 108 1.1× 20 0.9× 92 794
E. Simoen Belgium 13 644 0.9× 79 0.4× 103 0.8× 64 0.7× 11 0.5× 40 663
Abhisek Dixit India 21 1.5k 2.1× 189 1.1× 131 1.0× 73 0.8× 60 2.7× 107 1.6k
Stephen LaLumondiere United States 10 282 0.4× 156 0.9× 137 1.0× 78 0.8× 45 2.0× 31 365
V. K. Yang United States 10 573 0.8× 152 0.9× 343 2.6× 121 1.3× 32 1.5× 16 619
W. Kuebart Germany 11 427 0.6× 119 0.7× 256 1.9× 99 1.1× 11 0.5× 25 482
F. F. Sudradjat United States 6 275 0.4× 184 1.0× 174 1.3× 99 1.1× 47 2.1× 13 361
Carl L. Dohrman United States 12 415 0.6× 82 0.5× 249 1.9× 58 0.6× 51 2.3× 30 457
Mikko Karppinen Finland 11 329 0.5× 126 0.7× 59 0.4× 19 0.2× 20 0.9× 51 379
H. Huber Austria 11 400 0.6× 345 2.0× 227 1.7× 45 0.5× 6 0.3× 29 518

Countries citing papers authored by F. Allibert

Since Specialization
Citations

This map shows the geographic impact of F. Allibert's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Allibert with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Allibert more than expected).

Fields of papers citing papers by F. Allibert

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Allibert. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Allibert. The network helps show where F. Allibert may publish in the future.

Co-authorship network of co-authors of F. Allibert

This figure shows the co-authorship network connecting the top 25 collaborators of F. Allibert. A scholar is included among the top collaborators of F. Allibert based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Allibert. F. Allibert is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Acosta-Alba, Pablo, S. Reboh, Martin Rack, et al.. (2024). Local Interface RF Passivation Layer Based on Helium Ion-Implantation in High-Resistivity Silicon Substrates. SPIRE - Sciences Po Institutional REpository. 944–947. 1 indexed citations
2.
Rack, Martin, Zhixing Zhao, Steffen Lehmann, et al.. (2023). High-resistivity with PN interface passivation in 22 nm FD-SOI technology for low-loss passives at RF and millimeter-wave frequencies. Solid-State Electronics. 205. 108656–108656. 8 indexed citations
3.
Guiot, Eric, F. Allibert, J. Leib, et al.. (2023). Proven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device through the Use of SmartSiC<sup>TM</sup> Substrate. Materials science forum. 1092. 201–207. 3 indexed citations
4.
Guiot, Eric, et al.. (2023). Improved Power Cycling Reliability through the use of SmartSiC ™ Engineered Substrate for Power Devices. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 1 indexed citations
5.
Raskin, Jean‐Pierre, et al.. (2023). Buried PN Junctions Impact on the Performances of an Inductor at RF Frequencies. SPIRE - Sciences Po Institutional REpository. 28–30. 2 indexed citations
6.
Rack, Martin, Zhixing Zhao, Steffen Lehmann, et al.. (2022). Impact of substrate resistivity on spiral inductors at mm-wave frequencies. Solid-State Electronics. 194. 108377–108377. 6 indexed citations
7.
Rack, Martin, F. Allibert, & Jean‐Pierre Raskin. (2021). Modeling of Semiconductor Substrates for RF Applications: Part I—Static and Dynamic Physics of Carriers and Traps. IEEE Transactions on Electron Devices. 68(9). 4598–4605. 27 indexed citations
8.
Liu, Shuangke, et al.. (2018). RF Characteristics of Two Generations of RFeSI HR-SOI Substrates Over Temperature. IEEE Microwave and Wireless Components Letters. 28(5). 377–379. 6 indexed citations
9.
Esfeh, Babak Kazemi, Martin Rack, S. Makovejev, F. Allibert, & Jean‐Pierre Raskin. (2018). A SPDT RF Switch Small- and Large-Signal Characteristics on TR-HR SOI Substrates. IEEE Journal of the Electron Devices Society. 6. 543–550. 20 indexed citations
10.
Esfeh, Babak Kazemi, Martin Rack, Khaled Ben Ali, F. Allibert, & Jean‐Pierre Raskin. (2018). RF Small- and Large-Signal Characteristics of CPW and TFMS Lines on Trap-Rich HR-SOI Substrates. IEEE Transactions on Electron Devices. 65(8). 3120–3126. 4 indexed citations
11.
Esfeh, Babak Kazemi, S. Makovejev, F. Allibert, & Jean‐Pierre Raskin. (2017). A SPDT RF switch small- and large-signal characteristics on TR-HR SOI substrates. 1–3. 3 indexed citations
12.
Allibert, F., P. Morin, W. Schwarzenbach, et al.. (2014). Elastic relaxation in intrinsically-strained Fins: Simulations, physical and electrical characterization. 124 125. 1–3.
13.
Ohata, Akiko, Noel Rodríguez, I. Ionica, et al.. (2013). A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration. Solid-State Electronics. 90. 127–133. 12 indexed citations
14.
Ionica, I., S. Cristoloveanu, F. Allibert, et al.. (2011). Low-frequency noise in SOI pseudo-MOSFET with pressure probes. Microelectronic Engineering. 88(7). 1283–1285. 10 indexed citations
15.
Allibert, F., et al.. (2010). Mobility in ultrathin SOI MOSFET and pseudo-MOSFET: Impact of the potential at both interfaces. Solid-State Electronics. 57(1). 83–86. 10 indexed citations
16.
Signamarcheix, Thomas, F. Allibert, F. Letertre, et al.. (2008). Germanium oxynitride (GeOxNy) as a back interface passivation layer for Germanium-on-insulator substrates. Applied Physics Letters. 93(2). 22109–22109. 5 indexed citations
17.
Deguet, C., J. Dechamp, Christophe Morales, et al.. (2006). 200 mm Germanium-On-Insulator (GeOI) Structures Realized from Epitaxial Wafers Using the Smart Cut(TM) Technology. ECS Meeting Abstracts. MA2005-01(11). 483–483. 3 indexed citations
18.
Cristoloveanu, S., et al.. (2002). The Four-Gate Transistor. 323–326. 19 indexed citations
19.
Allibert, F., A. Zaslavsky, & S. Cristoloveanu. (2002). Double-gate SOI MOSFETs with asymmetrical configuration. e78 c. 149–150. 2 indexed citations
20.
Allibert, F., et al.. (2001). From SOI materials to innovative devices. Solid-State Electronics. 45(4). 559–566. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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