P. Scheiblin

1.4k total citations
51 papers, 793 citations indexed

About

P. Scheiblin is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, P. Scheiblin has authored 51 papers receiving a total of 793 indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Electrical and Electronic Engineering, 11 papers in Computational Mechanics and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in P. Scheiblin's work include Semiconductor materials and devices (36 papers), Advancements in Semiconductor Devices and Circuit Design (25 papers) and Integrated Circuits and Semiconductor Failure Analysis (16 papers). P. Scheiblin is often cited by papers focused on Semiconductor materials and devices (36 papers), Advancements in Semiconductor Devices and Circuit Design (25 papers) and Integrated Circuits and Semiconductor Failure Analysis (16 papers). P. Scheiblin collaborates with scholars based in France, Italy and Germany. P. Scheiblin's co-authors include S. Koffel, A. Claverie, G. Benassayag, C. Fenouillet-Béranger, O. Weber, O. Rozeau, O. Faynot, F. Bœuf, Olivier Thomas and François Andrieu and has published in prestigious journals such as Journal of Applied Physics, Applied Surface Science and IEEE Transactions on Electron Devices.

In The Last Decade

P. Scheiblin

49 papers receiving 775 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Scheiblin France 15 764 159 114 107 95 51 793
Christophe Maleville France 11 463 0.6× 78 0.5× 102 0.9× 89 0.8× 49 0.5× 53 503
M. Haond France 18 906 1.2× 78 0.5× 124 1.1× 123 1.1× 29 0.3× 100 936
J. Margail France 15 695 0.9× 84 0.5× 76 0.7× 193 1.8× 95 1.0× 43 727
K.P. MacWilliams United States 11 608 0.8× 138 0.9× 82 0.7× 100 0.9× 33 0.3× 36 658
A. Chou United States 11 657 0.9× 80 0.5× 71 0.6× 114 1.1× 21 0.2× 24 684
A.M. Papon France 11 468 0.6× 102 0.6× 119 1.0× 122 1.1× 61 0.6× 25 522
J.R. Pfiester United States 13 661 0.9× 166 1.0× 49 0.4× 128 1.2× 23 0.2× 49 673
Manabu Itsumi Japan 14 564 0.7× 163 1.0× 74 0.6× 292 2.7× 33 0.3× 59 634
T. J. Grasby United Kingdom 15 464 0.6× 224 1.4× 61 0.5× 92 0.9× 37 0.4× 28 512
K. Lyutovich Germany 15 679 0.9× 392 2.5× 176 1.5× 236 2.2× 68 0.7× 48 787

Countries citing papers authored by P. Scheiblin

Since Specialization
Citations

This map shows the geographic impact of P. Scheiblin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Scheiblin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Scheiblin more than expected).

Fields of papers citing papers by P. Scheiblin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Scheiblin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Scheiblin. The network helps show where P. Scheiblin may publish in the future.

Co-authorship network of co-authors of P. Scheiblin

This figure shows the co-authorship network connecting the top 25 collaborators of P. Scheiblin. A scholar is included among the top collaborators of P. Scheiblin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Scheiblin. P. Scheiblin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Garros, X., J. Lacord, F. Andrieu, et al.. (2019). RF Performance of a Fully Integrated 3D Sequential Technology. SPIRE - Sciences Po Institutional REpository. 25.1.1–25.1.4. 3 indexed citations
2.
Baines, Yannick, Matthew Charles, E. Morvan, et al.. (2017). TCAD for gate stack optimization in pGaN Gate HEMT devices. 113–116. 6 indexed citations
3.
Noël, Jean-Philippe, Olivier Thomas, Marie-Anne Jaud, et al.. (2011). Multi-$V_{T}$ UTBB FDSOI Device Architectures for Low-Power CMOS Circuit. IEEE Transactions on Electron Devices. 58(8). 2473–2482. 137 indexed citations
4.
Arshad, M. K. Md, Jean‐Pierre Raskin, Valeriya Kilchytska, et al.. (2010). Improved DIBL in Ultra Thin Body SOI MOSFETs with Ultra Thin Buried Oxide and inverted substrate. 2 indexed citations
5.
Noël, J.-P., Olivier Thomas, M.-A. Jaud, et al.. (2010). UT2B-FDSOI device architecture dedicated to low power design techniques. 91. 210–213. 15 indexed citations
6.
Scheiblin, P., et al.. (2010). In-depth physical investigation of GeOI pMOSFET by TCAD calibrated simulation. Solid-State Electronics. 57(1). 67–72. 11 indexed citations
7.
Koffel, S., Anton J. Bauer, P. Pichler, et al.. (2010). Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germanium. Microelectronic Engineering. 88(4). 458–461. 21 indexed citations
8.
Jaud, Marie-Anne, P. Scheiblin, M. Cassé, et al.. (2010). TCAD simulation vs. experimental results in FDSOI technology: From advanced mobility modeling to 6T-SRAM cell characteristics prediction. 283–286. 4 indexed citations
9.
Koffel, S., P. Pichler, Anton J. Bauer, et al.. (2009). Honeycomb voids due to ion implantation in germanium. Thin Solid Films. 518(9). 2323–2325. 22 indexed citations
10.
Koffel, S., N. Cherkashin, Florent Houdellier, et al.. (2009). End of range defects in Ge. Journal of Applied Physics. 105(12). 33 indexed citations
11.
Koffel, S., P. Scheiblin, A. Claverie, & G. Benassayag. (2009). Amorphization kinetics of germanium during ion implantation. Journal of Applied Physics. 105(1). 62 indexed citations
12.
Arshad, M. K. Md, Jean‐Pierre Raskin, Valeriya Kilchytska, et al.. (2009). Drain / substrate coupling impact on DIBL of Ultra Thin Body and BOX SOI MOSFETs with undoped channel. Ghent University Academic Bibliography (Ghent University). 141–144. 8 indexed citations
13.
Koffel, S., P. Scheiblin, A. Claverie, & V. Mazzocchi. (2008). Doping of germanium by phosphorus implantation: Prediction of diffused profiles with simulation. Materials Science and Engineering B. 154-155. 60–63. 12 indexed citations
14.
Koffel, S., P. Scheiblin, & A. Claverie. (2008). Regrowth Kinetics Of Self-amorphized Germanium and Evolution Of Implant Damage. ECS Transactions. 16(10). 229–232. 3 indexed citations
15.
16.
Koffel, S., A. Claverie, G. Benassayag, & P. Scheiblin. (2006). Amorphization kinetics of germanium under ion implantation. Materials Science in Semiconductor Processing. 9(4-5). 664–667. 17 indexed citations
17.
18.
Fraboulet, D., X. Jehl, D. Mariolle, et al.. (2002). Coulomb Blockade in Thin SOI Nanodevices. SPIRE - Sciences Po Institutional REpository. 96?4. 395–398. 3 indexed citations
19.
Lejeune, C, et al.. (1990). Highly selective SiO2/Si reactive ion beam etching withlow energy fluorocarbon ions. Thin Solid Films. 193-194. 100–109. 16 indexed citations
20.
Cardinaud, Christophe, et al.. (1989). Silicon damage and residue overlayer caused by rie and ribe processes with CHF3. Applied Surface Science. 36(1-4). 322–331. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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