Roman Boschke
- Electrical and Electronic Engineering top 5%
- Materials Chemistry top 10%
- Biomedical Engineering
- Atomic and Molecular Physics, and Optics
- Artificial Intelligence
- Co-authors
- Ekaterina YurchukT. SchlösserRaik HoffmannJohannes MüllerThomas MikolajickDominik MartinStefan SlesazeckJan Paul
- Topics
- Semiconductor materials and devices (25 papers)Electrostatic Discharge in Electronics (17 papers)Advancements in Semiconductor Devices and Circuit Design (15 papers)
In The Last Decade
Roman Boschke
29 papers receiving 738 citations
Peers
Comparison fields: 5 of 25
- Electrical and Electronic Engineering 738
- Materials Chemistry 372
- Biomedical Engineering 36
- Atomic and Molecular Physics, and Optics 16
- Artificial Intelligence 12
Countries citing papers authored by Roman Boschke
This map shows the geographic impact of Roman Boschke's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Roman Boschke with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Roman Boschke more than expected).
Fields of papers citing papers by Roman Boschke
This network shows the impact of papers produced by Roman Boschke. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Roman Boschke. The network helps show where Roman Boschke may publish in the future.
Co-authorship network of co-authors of Roman Boschke
This figure shows the co-authorship network connecting the top 25 collaborators of Roman Boschke. A scholar is included among the top collaborators of Roman Boschke based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Roman Boschke. Roman Boschke is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 2 | |
| 2 | 13 | |
| 3 | 8 | |
| 4 | 1 | |
| 5 | 8 | |
| 6 | 5 | |
| 7 | 5 | |
| 8 | 1 | |
| 9 | 1 | |
| 10 | 2 | |
| 11 | 2 | |
| 12 | 3 | |
| 13 | 133 | |
| 14 | 18 | |
| 15 | 98 | |
| 16 | 239 | |
| 17 | 32 | |
| 18 | 5 | |
| 19 | 11 | |
| 20 | 24 |
About Roman Boschke
Roman Boschke is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 30 papers that have together received 751 indexed citations. Recurring topics across this work include Semiconductor materials and devices (25 papers), Electrostatic Discharge in Electronics (17 papers) and Advancements in Semiconductor Devices and Circuit Design (15 papers). The work is most often cited by research in Electrical and Electronic Engineering (738 citations), Materials Chemistry (372 citations) and Biomedical Engineering (36 citations). Roman Boschke has collaborated with scholars based in Belgium, Germany and Taiwan. Frequent co-authors include Ekaterina Yurchuk, T. Schlösser, Raik Hoffmann, Johannes Müller, Thomas Mikolajick, Dominik Martin, Stefan Slesazeck, Jan Paul, Stefan Mueller and U. Schröder. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Transactions on Device and Materials Reliability and ECS Transactions.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.