Roman Boschke

1.4k total citations
30 papers, 751 citations indexed

About

Roman Boschke is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Roman Boschke has authored 30 papers receiving a total of 751 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 4 papers in Materials Chemistry and 1 paper in Atomic and Molecular Physics, and Optics. Recurrent topics in Roman Boschke's work include Semiconductor materials and devices (25 papers), Electrostatic Discharge in Electronics (17 papers) and Advancements in Semiconductor Devices and Circuit Design (15 papers). Roman Boschke is often cited by papers focused on Semiconductor materials and devices (25 papers), Electrostatic Discharge in Electronics (17 papers) and Advancements in Semiconductor Devices and Circuit Design (15 papers). Roman Boschke collaborates with scholars based in Belgium, Germany and Taiwan. Roman Boschke's co-authors include Ekaterina Yurchuk, T. Schlösser, Raik Hoffmann, Johannes Müller, Thomas Mikolajick, Dominik Martin, Stefan Slesazeck, Jan Paul, Stefan Mueller and U. Schröder and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Transactions on Device and Materials Reliability and ECS Transactions.

In The Last Decade

Roman Boschke

29 papers receiving 738 citations

Peers

Roman Boschke
Jan Paul Germany
Ava J. Tan United States
Chengji Jin China
P. Steinke Germany
B. Pätzold Germany
Dirk Utess Germany
Evelyn T. Breyer Germany
Maximilian Drescher Germany
Karine Florent Belgium
Nirmaan Shanker United States
Jan Paul Germany
Roman Boschke
Citations per year, relative to Roman Boschke Roman Boschke (= 1×) peers Jan Paul

Countries citing papers authored by Roman Boschke

Since Specialization
Citations

This map shows the geographic impact of Roman Boschke's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Roman Boschke with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Roman Boschke more than expected).

Fields of papers citing papers by Roman Boschke

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Roman Boschke. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Roman Boschke. The network helps show where Roman Boschke may publish in the future.

Co-authorship network of co-authors of Roman Boschke

This figure shows the co-authorship network connecting the top 25 collaborators of Roman Boschke. A scholar is included among the top collaborators of Roman Boschke based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Roman Boschke. Roman Boschke is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Boschke, Roman, Shih‐Hung Chen, Mirko Scholz, et al.. (2017). ESD ballasting of Ge FinFET ggNMOS devices. 3F–3.1. 2 indexed citations
2.
Linten, D., Mirko Scholz, Geert Hellings, et al.. (2017). Latchup in bulk FinFET technology. EL–1.1. 13 indexed citations
3.
Hellings, Geert, D. Linten, T. Chiarella, et al.. (2017). Towards optimal ESD diodes in next generation bulk FinFET and GAA NW technology nodes. 7.4.1–7.4.4. 8 indexed citations
4.
5.
Scholz, Mirko, Soeren Steudel, Kris Myny, et al.. (2016). ESD protection design in a-IGZO TFT technologies. Zenodo (CERN European Organization for Nuclear Research). 1–7. 8 indexed citations
6.
Hellings, Geert, Mirko Scholz, D. Linten, et al.. (2016). ESD diodes in a bulk Si gate-all-around vertically stacked horizontal nanowire technology. 35.4.1–35.4.4. 5 indexed citations
7.
Linten, D., Geert Hellings, A. Veloso, et al.. (2015). ESD characterization of gate-all-around (GAA) Si nanowire devices. 14.4.1–14.4.4. 5 indexed citations
8.
Ji, Zhigang, D. Linten, Roman Boschke, et al.. (2015). ESD characterization of planar InGaAs devices. 3F.1.1–3F.1.7. 1 indexed citations
9.
Boschke, Roman, G. Groeseneken, Mirko Scholz, et al.. (2015). ESD protection diodes in optical interposer technology. 33. 1–4. 1 indexed citations
10.
11.
Boschke, Roman, Dimitri Linten, Geert Hellings, et al.. (2015). ESD characterization of diodes and ggMOS in Germanium FinFET technologies. 36. 1–9. 2 indexed citations
12.
Chen, Shih‐Hung, Dimitri Linten, Mirko Scholz, et al.. (2015). VFTLP characteristics of ESD protection diodes in advanced bulk FinFET technology. 1–6. 3 indexed citations
13.
Yurchuk, Ekaterina, Johannes Müller, Jan Paul, et al.. (2014). Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors. IEEE Transactions on Electron Devices. 61(11). 3699–3706. 133 indexed citations
14.
Linten, D., Mirko Scholz, Geert Hellings, et al.. (2014). Gated and STI defined ESD diodes in advanced bulk FinFET technologies. 20.4.1–20.4.4. 18 indexed citations
15.
Yurchuk, Ekaterina, Stefan Mueller, Dominik Martin, et al.. (2014). Origin of the endurance degradation in the novel HfO<inf>2</inf>-based 1T ferroelectric non-volatile memories. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 2E.5.1–2E.5.5. 98 indexed citations
16.
Müller, Johannes, Ekaterina Yurchuk, T. Schlösser, et al.. (2012). Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 25–26. 239 indexed citations
17.
Yurchuk, Ekaterina, Johannes Müller, Raik Hoffmann, et al.. (2012). HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 1–4. 32 indexed citations
18.
Wiatr, Maciej, A. Wei, Roman Boschke, et al.. (2007). Review on Process-Induced Strain Techniques for Advanced Logic Technologies. 19–29. 5 indexed citations
19.
Boschke, Roman, et al.. (2007). Integration Challenges for Advanced Process-Strained CMOS on Biaxial-Strained-SOI (SSOI) Substrates. ECS Transactions. 6(1). 15–22. 11 indexed citations
20.
Wei, A., Maciej Wiatr, A. U. Gehring, et al.. (2007). Multiple Stress Memorization In Advanced SOI CMOS Technologies. 216–217. 24 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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