Thomas Feudel

647 total citations
28 papers, 245 citations indexed

About

Thomas Feudel is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Thomas Feudel has authored 28 papers receiving a total of 245 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 6 papers in Computational Mechanics and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Thomas Feudel's work include Semiconductor materials and devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Silicon and Solar Cell Technologies (14 papers). Thomas Feudel is often cited by papers focused on Semiconductor materials and devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Silicon and Solar Cell Technologies (14 papers). Thomas Feudel collaborates with scholars based in Germany, United States and Italy. Thomas Feudel's co-authors include M. Posselt, Ken Suzuki, B. Schmidt, Ch. S. N. Murthy, Giovanni Mannino, Μ. Horstmann, Wolfgang Fichtner, Alessandra Alberti, Corrado Bongiorno and E. Rimini and has published in prestigious journals such as Journal of The Electrochemical Society, IEEE Transactions on Electron Devices and Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms.

In The Last Decade

Thomas Feudel

27 papers receiving 229 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Thomas Feudel Germany 8 232 70 52 30 22 28 245
W. Rausch United States 10 420 1.8× 78 1.1× 183 3.5× 27 0.9× 40 1.8× 27 438
A. Budrevich United States 5 324 1.4× 25 0.4× 30 0.6× 98 3.3× 30 1.4× 11 347
T. Fukai Japan 10 316 1.4× 29 0.4× 25 0.5× 33 1.1× 21 1.0× 22 340
S. Novak United States 10 315 1.4× 29 0.4× 81 1.6× 10 0.3× 17 0.8× 21 345
H.-H. Vuong United States 9 176 0.8× 20 0.3× 49 0.9× 11 0.4× 19 0.9× 22 186
F. Floreani United Kingdom 8 299 1.3× 20 0.3× 130 2.5× 34 1.1× 11 0.5× 21 331
X. Hebras France 8 326 1.4× 97 1.4× 159 3.1× 31 1.0× 80 3.6× 12 358
Christoph Zechner Switzerland 11 316 1.4× 24 0.3× 107 2.1× 41 1.4× 61 2.8× 50 331
S. Peters Germany 9 280 1.2× 10 0.1× 114 2.2× 38 1.3× 70 3.2× 26 293
S. Kawazu Japan 8 123 0.5× 20 0.3× 24 0.5× 11 0.4× 20 0.9× 21 143

Countries citing papers authored by Thomas Feudel

Since Specialization
Citations

This map shows the geographic impact of Thomas Feudel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Thomas Feudel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Thomas Feudel more than expected).

Fields of papers citing papers by Thomas Feudel

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Thomas Feudel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Thomas Feudel. The network helps show where Thomas Feudel may publish in the future.

Co-authorship network of co-authors of Thomas Feudel

This figure shows the co-authorship network connecting the top 25 collaborators of Thomas Feudel. A scholar is included among the top collaborators of Thomas Feudel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Thomas Feudel. Thomas Feudel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Holt, J., C. Le Royer, Thomas Feudel, et al.. (2018). Advantages of Faceted P-Raised Source/Drain in Fully Depleted Silicon on Insulator Technology. ECS Transactions. 86(7). 199–206. 3 indexed citations
2.
Watts, Josef, Kok Wai Chew, Steffen Lehmann, et al.. (2017). RF-pFET in fully depleted SOI demonstrates 420 GHz FT. 84–87. 6 indexed citations
3.
Chew, Kok Wai, Thomas Feudel, Laegu Kang, et al.. (2016). Low Power FDSOI Technology and Devices for RF Applications. ECS Transactions. 75(8). 21–27. 2 indexed citations
4.
Krueger, C., Thomas Feudel, A.M. Waite, et al.. (2011). Achieving Uniform Device Performance by Using Advanced Process Control and SuperScan™. AIP conference proceedings. 123–126. 2 indexed citations
5.
Flachowsky, S., et al.. (2010). Effect of source/drain-extension dopant species on device performance of embedded SiGe strained p-metal oxide semiconductor field effect transistors using millisecond annealing. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 28(1). C1I12–C1I16. 3 indexed citations
6.
Feudel, Thomas. (2008). Advanced Annealing Schemes for High-Performance SOI Logic Technologies. Materials science forum. 573-574. 387–400. 4 indexed citations
7.
Sekar, Karuppanan, et al.. (2008). Optimization of ClusterCarbon™ process parameters for strained Si lattice. Materials Science and Engineering B. 154-155. 122–125. 1 indexed citations
8.
Wei, A., Maciej Wiatr, A. U. Gehring, et al.. (2007). Multiple Stress Memorization In Advanced SOI CMOS Technologies. 216–217. 24 indexed citations
9.
Alberti, Alessandra, Corrado Bongiorno, Giovanni Mannino, et al.. (2005). Pseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon. Acta Crystallographica Section B Structural Science. 61(5). 486–491. 26 indexed citations
10.
Feudel, Thomas, et al.. (2005). Influence of co-implantation on the activation and diffusion of ultra-shallow extension implantation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 237(1-2). 203–207. 1 indexed citations
11.
Alberti, Alessandra, Luisa Ottaviano, Corrado Bongiorno, et al.. (2004). Thermal stability of nickel silicide on silicon on insulator (SOI) material. Materials Science and Engineering B. 114-115. 228–231. 6 indexed citations
12.
Feudel, Thomas, et al.. (2004). Influence of HALO and drain-extension doping gradients on transistor performance. Materials Science and Engineering B. 114-115. 15–19. 6 indexed citations
13.
Alberti, Alessandra, Corrado Bongiorno, Giovanni Mannino, et al.. (2004). Thin nickel silicide layer formation on silicon on insulator material. Materials Science and Engineering B. 114-115. 42–45. 1 indexed citations
14.
Fïchtner, Wolf, et al.. (2002). TCAD in power device design and optimization. 93–96. 4 indexed citations
15.
Posselt, M., et al.. (2000). Atomistic simulation of ion implantation and its application in Si technology. Materials Science and Engineering B. 71(1-3). 128–136. 33 indexed citations
16.
Suzuki, Ken, et al.. (2000). Compact and comprehensive database for ion-implanted As profile. IEEE Transactions on Electron Devices. 47(1). 44–49. 11 indexed citations
17.
Murthy, Ch. S. N., M. Posselt, & Thomas Feudel. (1998). Physically based modeling of two-dimensional and three-dimensional implantation profiles: Influence of damage accumulation. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(1). 440–446. 1 indexed citations
18.
Posselt, M., et al.. (1998). Atomistic simulation of ion implantation into 2D structures. Computational Materials Science. 11(2). 87–95. 3 indexed citations
19.
Suzuki, Kunihiro, et al.. (1998). Comprehensive analytical expression for dose dependent ion-implanted impurity concentration profiles. Solid-State Electronics. 42(9). 1671–1678. 19 indexed citations
20.
Posselt, M., B. Schmidt, Ch. S. N. Murthy, Thomas Feudel, & Ken Suzuki. (1997). Modeling of Damage Accumulation during Ion Implantation into Single‐Crystalline Silicon. Journal of The Electrochemical Society. 144(4). 1495–1504. 54 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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