Chengji Jin

772 total citations
52 papers, 541 citations indexed

About

Chengji Jin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Chengji Jin has authored 52 papers receiving a total of 541 indexed citations (citations by other indexed papers that have themselves been cited), including 52 papers in Electrical and Electronic Engineering, 21 papers in Materials Chemistry and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Chengji Jin's work include Ferroelectric and Negative Capacitance Devices (46 papers), Semiconductor materials and devices (42 papers) and Advanced Memory and Neural Computing (20 papers). Chengji Jin is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (46 papers), Semiconductor materials and devices (42 papers) and Advanced Memory and Neural Computing (20 papers). Chengji Jin collaborates with scholars based in China, Japan and Taiwan. Chengji Jin's co-authors include Masaharu Kobayashi, Toshiro Hiramoto, Takuya Saraya, Fei Mo, Yusaku Tagawa, Genquan Han, Yan Liu, Xiao Yu, Bing Chen and Yue Peng and has published in prestigious journals such as Nature Communications, SHILAP Revista de lepidopterología and Applied Physics Letters.

In The Last Decade

Chengji Jin

42 papers receiving 523 citations

Peers

Chengji Jin

EEE

AMPO

Qiwen Kong Singapore

Chen-Feng Hsu Taiwan

Huiming Bu United States

Chang-Hsien Lin Taiwan

Leming Jiao Singapore

Annie Kumar Singapore

Ava J. Tan United States

Xiaolin Wang Singapore

Nouredine Rassoul Belgium

Jesús Calvo Germany

Qiwen Kong Singapore

Chengji Jin

396 ×0.8

EEE

122 ×0.5

39 ×1.0

21 ×0.7

AMPO

33 ×1.8

Citations per year, relative to Chengji Jin Chengji Jin (= 1×) peers Qiwen Kong

Countries citing papers authored by Chengji Jin

Since Specialization

Citations

This map shows the geographic impact of Chengji Jin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chengji Jin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chengji Jin more than expected).

Fields of papers citing papers by Chengji Jin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chengji Jin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chengji Jin. The network helps show where Chengji Jin may publish in the future.

Co-authorship network of co-authors of Chengji Jin

This figure shows the co-authorship network connecting the top 25 collaborators of Chengji Jin. A scholar is included among the top collaborators of Chengji Jin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chengji Jin. Chengji Jin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lin, Gaobo, Xinda Song, Huan Liu, et al.. (2025). Impact of Hf Doping on Half-Loop Operations of ZrO₂-Based Antiferroelectric Thin Films. IEEE Transactions on Electron Devices. 72(7). 3907–3910.

Liu, Huan, Dongya Li, Chengji Jin, et al.. (2025). A Comprehensive Study on the Polarization, Reliability, and Switching Dynamics of Helium Ion-Bombardment HfZrO Ferroelectric Films. IEEE Transactions on Electron Devices. 72(7). 3521–3527.

Chen, Jiajia, Bowen Chen, Gaobo Lin, et al.. (2025). Low-power edge detection based on ferroelectric field-effect transistor. Nature Communications. 16(1). 565–565. 8 indexed citations

Gong, Zhi, et al.. (2025). Back-End-of-Line Compatible HfO₂/ZrO₂ Superlattice Ferroelectric Capacitor With TiO₂ Seed Layer for Enhanced Ferroelectricity. IEEE Transactions on Electron Devices. 72(2). 665–670. 1 indexed citations

Li, Yutao, Jingsi Qiao, Chengji Jin, et al.. (2025). A Physics-Based Compact Model for IGZO Channel FET Toward Subthreshold Characteristic Dependent Memory Application. IEEE Transactions on Electron Devices. 72(5). 2390–2398. 1 indexed citations

Lin, Gaobo, Bing Chen, Ran Cheng, et al.. (2024). Monolithic 3D Integration of 1T1C AFeRAM With InGaZnO/InO Dual-Channel FET and AFE ZrO ₂ Capacitor for Low-Power and High-Density Embedded Nonvolatile Memory. IEEE Electron Device Letters. 46(2). 183–186. 1 indexed citations

Lin, Gaobo, Jian Rong, Yan Liu, et al.. (2024). Characterizing polarization switching kinetics of ferroelectric Hf0.5Zr0.5O2 at cryogenic temperature. Journal of Applied Physics. 136(10).

Wang, Jiameng, Gaobo Lin, Minglei Ma, et al.. (2024). Boost Antiferroelectricity in ZrO₂-Based Capacitors by Ozone Treatment on Bottom Electrode. IEEE Transactions on Electron Devices. 71(12). 8016–8020. 1 indexed citations

Lin, Gaobo, Xinda Song, Yan Liu, et al.. (2024). Anti-Ferroelectric ZrO₂ Capacitors With Ultralow Operating Voltage (<1.2 V) and Improved Endurance Toward Logic Compatible eDRAM. IEEE Transactions on Electron Devices. 71(9). 5767–5770. 5 indexed citations

10.

Li, Xueyang, Chengji Jin, Xiao Yu, et al.. (2024). Experimental Demonstration of Non-Volatile Boolean Logic With Field Configurable 1FeFET-1RRAM Technology. IEEE Electron Device Letters. 45(6). 1084–1087. 4 indexed citations

11.

Ma, Minglei, et al.. (2024). Enhanced Endurance and Stability of FDSOI Ferroelectric FETs at Cryogenic Temperatures for Advanced Memory Applications. IEEE Transactions on Electron Devices. 71(11). 6680–6685. 3 indexed citations

12.

Chen, Jiajia, Huan Liu, Chengji Jin, et al.. (2023). A Physics-Based Model and Its Solution Methodology for Hysteresis Mobile-Ionic Dielectrics. IEEE Transactions on Magnetics. 59(5). 1–5.

13.

Jin, Chengji, Jiayi Zhao, Jiajia Chen, et al.. (2023). A Multi-Bit CAM Design With Ultra-High Density and Energy Efficiency Based on FeFET NAND. IEEE Electron Device Letters. 44(7). 1104–1107. 14 indexed citations

14.

Peng, Yue, Wenwu Xiao, Fenning Liu, et al.. (2023). HfO₂–ZrO₂ Superlattice Ferroelectric Field-Effect Transistor With Improved Endurance and Fatigue Recovery Performance. IEEE Transactions on Electron Devices. 70(7). 3979–3982. 20 indexed citations

15.

Jin, Chengji, Jiajia Chen, Huan Liu, et al.. (2023). Polarization-Induced Temperature Instability of HfO₂-Based Ferroelectric FET. IEEE Electron Device Letters. 45(1). 32–35. 2 indexed citations

16.

Chen, Jiajia, Chengji Jin, Xiao Yu, et al.. (2022). Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO₂-Based Thin Films. IEEE Transactions on Electron Devices. 69(9). 5297–5301. 44 indexed citations

17.

Liu, Huan, Jing Li, Guosheng Wang, et al.. (2022). Analog Synapses Based on Nonvolatile FETs With Amorphous ZrO₂ Dielectric for Spiking Neural Network Applications. IEEE Transactions on Electron Devices. 69(3). 1028–1033. 16 indexed citations

18.

Peng, Yue, Wenwu Xiao, Yan Liu, et al.. (2021). HfO₂-ZrO₂ Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability. IEEE Electron Device Letters. 43(2). 216–219. 63 indexed citations

19.

Mo, Fei, Yusaku Tagawa, Chengji Jin, et al.. (2020). Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application. IEEE Journal of the Electron Devices Society. 8. 717–723. 106 indexed citations

20.

Jin, Chengji, Takuya Saraya, Toshiro Hiramoto, & Masaharu Kobayashi. (2019). On the Physical Mechanism of Transient Negative Capacitance Effect in Deep Subthreshold Region. IEEE Journal of the Electron Devices Society. 7. 368–374. 27 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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