B. Pätzold

656 total citations
9 papers, 545 citations indexed

About

B. Pätzold is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Infectious Diseases. According to data from OpenAlex, B. Pätzold has authored 9 papers receiving a total of 545 indexed citations (citations by other indexed papers that have themselves been cited), including 9 papers in Electrical and Electronic Engineering, 9 papers in Materials Chemistry and 0 papers in Infectious Diseases. Recurrent topics in B. Pätzold's work include Ferroelectric and Negative Capacitance Devices (9 papers), MXene and MAX Phase Materials (9 papers) and Semiconductor materials and devices (8 papers). B. Pätzold is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (9 papers), MXene and MAX Phase Materials (9 papers) and Semiconductor materials and devices (8 papers). B. Pätzold collaborates with scholars based in Germany and Belgium. B. Pätzold's co-authors include Kati Kühnel, Matthias Rudolph, Konrad Seidel, M. Czernohorsky, Tarek Ali, P. Steinke, Thomas Kämpfe, Raik Hoffmann, Johannes Müller and P. Polakowski and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft).

In The Last Decade

B. Pätzold

9 papers receiving 533 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Pätzold Germany 8 534 311 25 11 11 9 545
P. Steinke Germany 9 538 1.0× 318 1.0× 33 1.3× 11 1.0× 11 1.0× 12 567
Myeong Seop Song South Korea 9 314 0.6× 227 0.7× 23 0.9× 6 0.5× 12 1.1× 17 341
Roman R. Khakimov Russia 9 357 0.7× 294 0.9× 14 0.6× 8 0.7× 14 1.3× 17 392
D. A. Lohr Germany 3 359 0.7× 217 0.7× 21 0.8× 8 0.7× 7 0.6× 5 370
Jan Paul Germany 8 725 1.4× 426 1.4× 32 1.3× 10 0.9× 20 1.8× 17 748
Zhaomeng Gao China 11 496 0.9× 410 1.3× 37 1.5× 12 1.1× 54 4.9× 31 557
Jesús Calvo Germany 4 363 0.7× 230 0.7× 23 0.9× 8 0.7× 7 0.6× 8 382
Dirk Utess Germany 5 427 0.8× 200 0.6× 17 0.7× 11 1.0× 15 1.4× 10 435
Jaidah Mohan United States 14 1.1k 2.0× 880 2.8× 42 1.7× 10 0.9× 24 2.2× 28 1.1k
Ava J. Tan United States 16 955 1.8× 521 1.7× 32 1.3× 12 1.1× 10 0.9× 20 973

Countries citing papers authored by B. Pätzold

Since Specialization
Citations

This map shows the geographic impact of B. Pätzold's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Pätzold with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Pätzold more than expected).

Fields of papers citing papers by B. Pätzold

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Pätzold. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Pätzold. The network helps show where B. Pätzold may publish in the future.

Co-authorship network of co-authors of B. Pätzold

This figure shows the co-authorship network connecting the top 25 collaborators of B. Pätzold. A scholar is included among the top collaborators of B. Pätzold based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Pätzold. B. Pätzold is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

9 of 9 papers shown
1.
Ali, Tarek, Kati Kühnel, M. Czernohorsky, et al.. (2020). Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 1–9. 10 indexed citations
2.
Ali, Tarek, Kati Kühnel, M. Czernohorsky, et al.. (2020). A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: A Temperature-Modulated Operation. IEEE Transactions on Electron Devices. 67(7). 2793–2799. 20 indexed citations
3.
Ali, Tarek, Kati Kühnel, M. Czernohorsky, et al.. (2020). A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: Pyroelectricity and Reliability. IEEE Transactions on Electron Devices. 67(7). 2981–2987. 18 indexed citations
4.
Ali, Tarek, P. Polakowski, Thiess Büttner, et al.. (2019). Principles and Challenges for Binary Oxide Based Ferroelectric Memory FeFET. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 1–4. 12 indexed citations
5.
Ali, Tarek, P. Polakowski, Thiess Büttner, et al.. (2019). Theory and Experiment of Antiferroelectric (AFE) Si-Doped Hafnium Oxide (HSO) Enhanced Floating-Gate Memory. IEEE Transactions on Electron Devices. 66(8). 3356–3364. 20 indexed citations
6.
Seidel, Konrad, Tarek Ali, Raik Hoffmann, et al.. (2019). Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 1–4. 4 indexed citations
7.
Ali, Tarek, P. Polakowski, Kati Kühnel, et al.. (2019). A Multilevel FeFET Memory Device based on Laminated HSO and HZO Ferroelectric Layers for High-Density Storage. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 28.7.1–28.7.4. 99 indexed citations
8.
Ali, Tarek, P. Polakowski, S. Riedel, et al.. (2018). Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics. Applied Physics Letters. 112(22). 120 indexed citations
9.
Ali, Tarek, P. Polakowski, S. Riedel, et al.. (2018). High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty. IEEE Transactions on Electron Devices. 65(9). 3769–3774. 242 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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