U. Schröder

9.7k total citations · 4 hit papers
48 papers, 7.7k citations indexed

About

U. Schröder is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, U. Schröder has authored 48 papers receiving a total of 7.7k indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 30 papers in Materials Chemistry and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in U. Schröder's work include Semiconductor materials and devices (45 papers), Ferroelectric and Negative Capacitance Devices (33 papers) and Ferroelectric and Piezoelectric Materials (15 papers). U. Schröder is often cited by papers focused on Semiconductor materials and devices (45 papers), Ferroelectric and Negative Capacitance Devices (33 papers) and Ferroelectric and Piezoelectric Materials (15 papers). U. Schröder collaborates with scholars based in Germany, United States and Estonia. U. Schröder's co-authors include Johannes Müller, T. S. Böscke, U. Böttger, D. Bräuhaus, Thomas Mikolajick, L. Frey, Stefan Mueller, Jonas Sundqvist, P. Kücher and Ekaterina Yurchuk and has published in prestigious journals such as Advanced Materials, Nano Letters and Applied Physics Letters.

In The Last Decade

U. Schröder

48 papers receiving 7.6k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Ferroelectricity in hafnium oxide thin films

2011 2.1k citations T. S. Böscke, Johannes Müller et al. Applied Physics Letters profile →
Ferroelectricity in Simple Binary ZrO₂ and HfO₂

2012 1.4k citations Johannes Müller, T. S. Böscke et al. profile →
Ferroelectricity in yttrium-doped hafnium oxide

2011 580 citations Johannes Müller, U. Schröder et al. Journal of Applied Physics profile →
Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

2011 491 citations Johannes Müller, T. S. Böscke et al. Applied Physics Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
U. Schröder Germany	30	7.5k	5.6k	314	302	147	48	7.7k
Tony Schenk Germany	35	6.4k 0.9×	5.4k 1.0×	412 1.3×	287 1.0×	120 0.8×	67	6.8k
T. S. Böscke Germany	16	5.7k 0.8×	4.3k 0.8×	219 0.7×	173 0.6×	143 1.0×	27	5.8k
Min Hyuk Park South Korea	56	10.5k 1.4×	9.0k 1.6×	800 2.5×	612 2.0×	170 1.2×	141	11.3k
D. Bräuhaus Germany	10	4.7k 0.6×	3.6k 0.6×	191 0.6×	157 0.5×	55 0.4×	12	4.8k
Erfu Liu China	24	1.4k 0.2×	1.9k 0.3×	303 1.0×	215 0.7×	570 3.9×	31	2.5k
Igor Stolichnov Switzerland	31	1.8k 0.2×	2.5k 0.5×	1.2k 3.8×	948 3.1×	310 2.1×	88	3.3k
Shinji Migita Japan	24	2.4k 0.3×	1.2k 0.2×	233 0.7×	165 0.5×	232 1.6×	197	2.6k
Xiaolong Chen China	26	1.7k 0.2×	2.6k 0.5×	536 1.7×	391 1.3×	534 3.6×	90	3.1k
Pavan Nukala India	15	1.2k 0.2×	1.3k 0.2×	297 0.9×	325 1.1×	147 1.0×	54	1.7k
Ming‐Min Yang United Kingdom	20	978 0.1×	1.4k 0.3×	444 1.4×	735 2.4×	213 1.4×	45	2.0k

Countries citing papers authored by U. Schröder

Since Specialization

Citations

This map shows the geographic impact of U. Schröder's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by U. Schröder with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites U. Schröder more than expected).

Fields of papers citing papers by U. Schröder

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by U. Schröder. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by U. Schröder. The network helps show where U. Schröder may publish in the future.

Co-authorship network of co-authors of U. Schröder

This figure shows the co-authorship network connecting the top 25 collaborators of U. Schröder. A scholar is included among the top collaborators of U. Schröder based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with U. Schröder. U. Schröder is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Mikolajick, Thomas, Stefan Müller, Tony Schenk, et al.. (2014). Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors. Advances in science and technology. 95. 136–145. 60 indexed citations

Martin, Dominik, Johannes Müller, Tony Schenk, et al.. (2014). Ferroelectricity in Si‐Doped HfO₂ Revealed: A Binary Lead‐Free Ferroelectric. Advanced Materials. 26(48). 8198–8202. 154 indexed citations

Singh, Aarti, Hannes Klumbies, U. Schröder, et al.. (2013). Barrier performance optimization of atomic layer deposited diffusion barriers for organic light emitting diodes using x-ray reflectivity investigations. Applied Physics Letters. 103(23). 22 indexed citations

Zhou, Dayu, Jin Xu, Qing Li, et al.. (2013). Wake-up effects in Si-doped hafnium oxide ferroelectric thin films. Applied Physics Letters. 103(19). 340 indexed citations

Müller, Johannes, Ekaterina Yurchuk, T. Schlösser, et al.. (2012). Ferroelectricity in HfO₂ enables nonvolatile data storage in 28 nm HKMG. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 25–26. 239 indexed citations

Olsen, Thomas, U. Schröder, Stefan Müller, et al.. (2012). Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties. Applied Physics Letters. 101(8). 82905–82905. 152 indexed citations

Müller, Johannes, T. S. Böscke, U. Schröder, et al.. (2012). Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$. IEEE Electron Device Letters. 33(2). 185–187. 152 indexed citations

Graham, Anthony, S. Jakschik, Steve Knebel, et al.. (2012). An investigation of the electrical properties of the interface between pyrolytic carbon and silicon for Schottky diode applications. Journal of Applied Physics. 111(12). 124511–124511. 3 indexed citations

Yurchuk, Ekaterina, Johannes Müller, Raik Hoffmann, et al.. (2012). HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 1–4. 32 indexed citations

10.

Zhou, Dayu, Johannes Müller, Jin Xu, et al.. (2012). Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films. Applied Physics Letters. 100(8). 64 indexed citations

11.

Böscke, T. S., D. Bräuhaus, Johannes Müller, et al.. (2011). Phase transitions in ferroelectric silicon doped hafnium oxide. Applied Physics Letters. 99(11). 318 indexed citations

12.

Krause, Andreas, W. Weber, U. Schröder, et al.. (2011). Reduction of leakage currents with nanocrystals embedded in an amorphous matrix in metal-insulator-metal capacitor stacks. Applied Physics Letters. 99(22). 222905–222905. 3 indexed citations

13.

Böscke, T. S., Johannes Müller, D. Bräuhaus, U. Schröder, & U. Böttger. (2011). Ferroelectricity in hafnium oxide thin films. Applied Physics Letters. 99(10). 2087 indexed citations breakdown →

14.

Martin, Dominik, Matthias Grube, Wenke Weinreich, et al.. (2011). Macroscopic and microscopic electrical characterizations of high-k ZrO2 and ZrO2/Al2O3/ZrO2 metal-insulator-metal structures. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(1). 12 indexed citations

15.

Jegert, Gunther, Alfred Kersch, Wenke Weinreich, U. Schröder, & Paolo Lugli. (2010). Modeling of leakage currents in high-κ dielectrics: Three-dimensional approach via kinetic Monte Carlo. Applied Physics Letters. 96(6). 59 indexed citations

16.

Weinreich, Wenke, R. Reiche, M. Lemberger, et al.. (2009). Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1−)Al O2 films. Microelectronic Engineering. 86(7-9). 1826–1829. 58 indexed citations

17.

Niinistö, Jaakko, Kaupo Kukli, Timo Sajavaara, et al.. (2008). Atomic Layer Deposition of High-Permittivity Yttrium-Doped HfO[sub 2] Films. Electrochemical and Solid-State Letters. 12(1). G1–G1. 30 indexed citations

18.

Kukli, Kaupo, Mikko Ritala, Markku Leskelä, et al.. (2007). Influence of TiO2 incorporation in HfO2 and Al2O3 based capacitor dielectrics. Thin Solid Films. 515(16). 6447–6451. 29 indexed citations

19.

Specht, Michael, M. Städele, S. Jakschik, & U. Schröder. (2004). Transport mechanisms in atomic-layer-deposited Al2O3 dielectrics. Applied Physics Letters. 84(16). 3076–3078. 106 indexed citations

20.

Kerber, M., R. Duschl, H. Reisinger, et al.. (2004). Influence of charge trapping on AC reliability of high-k dielectrics. 585–586. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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