U. Schröder

9.7k citations

48 papers · 7.7k indexed · 4 hit papers · h-index 30

Electrical and Electronic Engineering top 0.2%
- Semiconductor materials and devices 45
- Ferroelectric and Negative Capacitance Devices 33
- Advanced Memory and Neural Computing 6
- Advancements in Semiconductor Devices and Circuit Design 5
Materials Chemistry top 0.5%
- Ferroelectric and Piezoelectric Materials 15
- Electronic and Structural Properties of Oxides 13
- MXene and MAX Phase Materials 5
Electronic, Optical and Magnetic Materials top 10%
- Copper Interconnects and Reliability 6
Biomedical Engineering top 10%
Mechanics of Materials top 10%

Co-authors: Johannes Müller T. S. Böscke U. Böttger D. Bräuhaus Thomas Mikolajick L. Frey Stefan Mueller Jonas Sundqvist
Cited by: Electrical and Electronic Engineering Materials Chemistry Electronic, Optical and Magnetic Materials
Journals: Applied Physics Letters (14 papers)Journal of Applied Physics (6 papers)Thin Solid Films (3 papers)
Partner nations: Germany United States Estonia

In The Last Decade

U. Schröder

48 papers receiving 7.6k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

2012 Nano Letters
2011 Applied Physics Letters
2011 Journal of Applied Physics
2011 Applied Physics Letters

Peers

Countries citing papers authored by U. Schröder

Since Specialization

Citations

This map shows the geographic impact of U. Schröder's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by U. Schröder with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites U. Schröder more than expected).

Fields of papers citing papers by U. Schröder

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by U. Schröder. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by U. Schröder. The network helps show where U. Schröder may publish in the future.

Co-authorship network

The 25 scholars most cited alongside U. Schröder, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with U. Schröder Line = papers co-authored together U. Schröder links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors Advances in science and technology ·Thomas Mikolajick,Stefan Müller,Tony Schenk,Ekaterina Yurchuk,Stefan Slesazeck,U. Schröder,S. Flachowsky,Ralf van Bentum,Sabine Kolodinski,P. Polakowski,Johannes Müller	2014	60
2	Ferroelectricity in Si‐Doped HfO₂ Revealed: A Binary Lead‐Free Ferroelectric Advanced Materials ·Dominik Martin,Johannes Müller,Tony Schenk,Thomas M. Arruda,Amit Kumar,Evgheni Strelcov,Ekaterina Yurchuk,Stefan Müller,Darius Pohl,U. Schröder,Sergei V. Kalinin,Thomas Mikolajick	2014	154
3	Barrier performance optimization of atomic layer deposited diffusion barriers for organic light emitting diodes using x-ray reflectivity investigations Applied Physics Letters ·Aarti Singh,Hannes Klumbies,U. Schröder,Lars Müller‐Meskamp,Marion Geidel,Martin Knaut,Christoph Hoßbach,Matthias Albert,Karl Leo,Thomas Mikolajick	2013	22
4	Wake-up effects in Si-doped hafnium oxide ferroelectric thin films Applied Physics Letters ·Dayu Zhou,Jin Xu,Qing Li,Yan Guan,Fei Cao,Xianlin Dong,Johannes Müller,Tony Schenk,U. Schröder	2013	340
5	Ferroelectricity in HfO₂ enables nonvolatile data storage in 28 nm HKMG Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Johannes Müller,Ekaterina Yurchuk,T. Schlösser,Paul Jarman,Raik Hoffmann,Stefan Müller,Dominik Martin,Stefan Slesazeck,P. Polakowski,Jonas Sundqvist,M. Czernohorsky,Konrad Seidel,P. Kücher,Roman Boschke,Martin Trentzsch,Elisa Obradovic,U. Schröder,Thomas Mikolajick	2012	239
6	Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties Applied Physics Letters ·Thomas Olsen,U. Schröder,Stefan Müller,Andreas Krause,Dominik Martin,Aarti Singh,Johannes Müller,Marion Geidel,Thomas Mikolajick	2012	152
7	Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$ IEEE Electron Device Letters ·Johannes Müller,T. S. Böscke,U. Schröder,Raik Hoffmann,Thomas Mikolajick,L. Frey	2012	152
8	An investigation of the electrical properties of the interface between pyrolytic carbon and silicon for Schottky diode applications Journal of Applied Physics ·Anthony Graham,Li-Yang Zou,S. Jakschik,Steve Knebel,W. Weber,U. Schröder,Thomas Mikolajick	2012	3
9	HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Ekaterina Yurchuk,Johannes Müller,Raik Hoffmann,Paul Jarman,Dominik Martin,Roman Boschke,T. Schlösser,Stefan Müller,Stefan Slesazeck,Ralf van Bentum,Martin Trentzsch,U. Schröder,Thomas Mikolajick	2012	32
10	Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films Applied Physics Letters ·Dayu Zhou,Johannes Müller,Jin Xu,Steve Knebel,D. Bräuhaus,U. Schröder	2012	64
11	Phase transitions in ferroelectric silicon doped hafnium oxide Applied Physics Letters ·T. S. Böscke,Farzaneh Mirhosseini,D. Bräuhaus,Johannes Müller,U. Schröder,U. Böttger,Thomas Mikolajick	2011	318
12	Reduction of leakage currents with nanocrystals embedded in an amorphous matrix in metal-insulator-metal capacitor stacks Applied Physics Letters ·Andreas Krause,W. Weber,U. Schröder,Darius Pohl,Bernd Rellinghaus,J. Heitmann,Thomas Mikolajick	2011	3
13	Ferroelectricity in hafnium oxide thin filmsbreakdown → Applied Physics Letters ·T. S. Böscke,Johannes Müller,D. Bräuhaus,U. Schröder,U. Böttger	2011	2087
14	Macroscopic and microscopic electrical characterizations of high-k ZrO2 and ZrO2/Al2O3/ZrO2 metal-insulator-metal structures Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Dominik Martin,Matthias Grube,Wenke Weinreich,Johannes Müller,L. Wilde,Elke Erben,W. Weber,Johannes Heitmann,U. Schröder,Thomas Mikolajick,Henning Riechert	2011	12
15	Modeling of leakage currents in high-κ dielectrics: Three-dimensional approach via kinetic Monte Carlo Applied Physics Letters ·Gunther Jegert,Alfred Kersch,Wenke Weinreich,U. Schröder,Paolo Lugli	2010	59
16	Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1−)Al O2 films Microelectronic Engineering ·Wenke Weinreich,R. Reiche,M. Lemberger,Gunther Jegert,Johannes Müller,L. Wilde,S. Teichert,J. Heitmann,Elke Erben,L. Oberbeck,U. Schröder,Anton J. Bauer,H. Ryssel	2009	58
17	Atomic Layer Deposition of High-Permittivity Yttrium-Doped HfO[sub 2] Films Electrochemical and Solid-State Letters ·Jaakko Niinistö,Kaupo Kukli,Timo Sajavaara,Mikko Ritala,Markku Leskelä,L. Oberbeck,Jonas Sundqvist,U. Schröder	2008	30
18	Influence of TiO2 incorporation in HfO2 and Al2O3 based capacitor dielectrics Thin Solid Films ·Kaupo Kukli,Mikko Ritala,Markku Leskelä,Jonas Sundqvist,L. Oberbeck,Johannes Heitmann,U. Schröder,Jaan Aarik,Aleks Aidla	2007	29
19	Transport mechanisms in atomic-layer-deposited Al2O3 dielectrics Applied Physics Letters ·Michael Specht,M. Städele,S. Jakschik,U. Schröder	2004	106
20	Influence of charge trapping on AC reliability of high-k dielectrics M. Kerber,R. Duschl,H. Reisinger,S. Jakschik,U. Schröder,T. Hecht,S. Kudelka	2004	6

About U. Schröder

U. Schröder is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Water Science and Technology, having authored 48 papers that have together received 7.7k indexed citations. Recurring topics across this work include Semiconductor materials and devices (45 papers), Ferroelectric and Negative Capacitance Devices (33 papers), Ferroelectric and Piezoelectric Materials (15 papers), Electronic and Structural Properties of Oxides (13 papers), Copper Interconnects and Reliability (6 papers), Advanced Memory and Neural Computing (6 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers) and MXene and MAX Phase Materials (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (7.5k citations), Materials Chemistry (5.6k citations), Electronic, Optical and Magnetic Materials (302 citations), Biomedical Engineering (314 citations) and Mechanics of Materials (134 citations). U. Schröder has collaborated with scholars based in Germany, United States and Estonia. Frequent co-authors include Johannes Müller, T. S. Böscke, U. Böttger, D. Bräuhaus, Thomas Mikolajick, L. Frey, Stefan Mueller, Jonas Sundqvist, P. Kücher and Ekaterina Yurchuk. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Thin Solid Films, Microelectronic Engineering and Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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