Ekaterina Yurchuk

2.8k total citations
21 papers, 2.0k citations indexed

About

Ekaterina Yurchuk is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Infectious Diseases. According to data from OpenAlex, Ekaterina Yurchuk has authored 21 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 15 papers in Materials Chemistry and 0 papers in Infectious Diseases. Recurrent topics in Ekaterina Yurchuk's work include Semiconductor materials and devices (19 papers), Ferroelectric and Negative Capacitance Devices (19 papers) and MXene and MAX Phase Materials (7 papers). Ekaterina Yurchuk is often cited by papers focused on Semiconductor materials and devices (19 papers), Ferroelectric and Negative Capacitance Devices (19 papers) and MXene and MAX Phase Materials (7 papers). Ekaterina Yurchuk collaborates with scholars based in Germany, United States and Belgium. Ekaterina Yurchuk's co-authors include Thomas Mikolajick, Johannes Müller, Uwe Schroeder, Dominik Martin, Ralf van Bentum, Tony Schenk, Stefan Müller, Stefan Mueller, U. Schröder and Jan Paul and has published in prestigious journals such as Advanced Materials, IEEE Transactions on Electron Devices and Thin Solid Films.

In The Last Decade

Ekaterina Yurchuk

21 papers receiving 2.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ekaterina Yurchuk Germany 15 1.9k 1.4k 96 88 29 21 2.0k
S. Riedel Germany 13 1.5k 0.8× 1.1k 0.8× 60 0.6× 50 0.6× 46 1.6× 38 1.5k
Franz P. G. Fengler Germany 13 2.3k 1.2× 1.8k 1.3× 107 1.1× 89 1.0× 19 0.7× 19 2.4k
Terence Mittmann Germany 20 1.5k 0.8× 1.2k 0.9× 83 0.9× 65 0.7× 29 1.0× 26 1.6k
Jiuren Zhou China 23 1.2k 0.6× 614 0.4× 132 1.4× 38 0.4× 51 1.8× 65 1.3k
Monica Materano Germany 24 1.6k 0.8× 1.2k 0.9× 57 0.6× 23 0.3× 16 0.6× 35 1.6k
David Lehninger Germany 19 1.2k 0.6× 771 0.6× 62 0.6× 28 0.3× 36 1.2× 85 1.2k
Pratyush Buragohain United States 13 734 0.4× 681 0.5× 82 0.9× 103 1.2× 47 1.6× 19 869
J. Ocker Germany 11 1.3k 0.7× 701 0.5× 50 0.5× 38 0.4× 14 0.5× 21 1.4k
Benjamin Max Germany 13 763 0.4× 522 0.4× 62 0.6× 56 0.6× 14 0.5× 18 852
Ralf van Bentum Germany 9 1.1k 0.6× 689 0.5× 37 0.4× 21 0.2× 20 0.7× 14 1.2k

Countries citing papers authored by Ekaterina Yurchuk

Since Specialization
Citations

This map shows the geographic impact of Ekaterina Yurchuk's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ekaterina Yurchuk with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ekaterina Yurchuk more than expected).

Fields of papers citing papers by Ekaterina Yurchuk

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ekaterina Yurchuk. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ekaterina Yurchuk. The network helps show where Ekaterina Yurchuk may publish in the future.

Co-authorship network of co-authors of Ekaterina Yurchuk

This figure shows the co-authorship network connecting the top 25 collaborators of Ekaterina Yurchuk. A scholar is included among the top collaborators of Ekaterina Yurchuk based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ekaterina Yurchuk. Ekaterina Yurchuk is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yurchuk, Ekaterina, Johannes Müller, Stefan Müller, et al.. (2016). Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories. IEEE Transactions on Electron Devices. 63(9). 3501–3507. 291 indexed citations
2.
Ocker, J., Stefan Slesazeck, Thomas Mikolajick, et al.. (2015). On the voltage scaling potential of SONOS non-volatile memory transistors. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 25. 118–121. 2 indexed citations
3.
Yurchuk, Ekaterina. (2015). Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films. Qucosa (Saxon State and University Library Dresden). 5 indexed citations
4.
Mikolajick, Thomas, Stefan Müller, Tony Schenk, et al.. (2014). Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors. Advances in science and technology. 95. 136–145. 60 indexed citations
5.
Schenk, Tony, Ekaterina Yurchuk, Stefan Mueller, et al.. (2014). About the deformation of ferroelectric hystereses. Applied Physics Reviews. 1(4). 41103–41103. 168 indexed citations
6.
Yurchuk, Ekaterina, Johannes Müller, Jan Paul, et al.. (2014). Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors. IEEE Transactions on Electron Devices. 61(11). 3699–3706. 133 indexed citations
7.
Martin, Dominik, Johannes Müller, Tony Schenk, et al.. (2014). Ferroelectricity in Si‐Doped HfO2 Revealed: A Binary Lead‐Free Ferroelectric. Advanced Materials. 26(48). 8198–8202. 154 indexed citations
8.
Yurchuk, Ekaterina, Stefan Mueller, Dominik Martin, et al.. (2014). Origin of the endurance degradation in the novel HfO<inf>2</inf>-based 1T ferroelectric non-volatile memories. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 2E.5.1–2E.5.5. 98 indexed citations
9.
Müller, Johannes, P. Polakowski, S. Riedel, et al.. (2014). Ferroelectric Hafnium Oxide A Game Changer to FRAM?. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 16 indexed citations
10.
Schroeder, Uwe, Ekaterina Yurchuk, Johannes Müller, et al.. (2014). Impact of different dopants on the switching properties of ferroelectric hafniumoxide. Japanese Journal of Applied Physics. 53(8S1). 08LE02–08LE02. 333 indexed citations
11.
Martin, Dominik, Ekaterina Yurchuk, Stefan Müller, et al.. (2013). Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2. Solid-State Electronics. 88. 65–68. 42 indexed citations
12.
Mueller, Stefan, Johannes Müller, Raik Hoffmann, et al.. (2013). From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices. IEEE Transactions on Electron Devices. 60(12). 4199–4205. 119 indexed citations
13.
Schroeder, Uwe, Stefan Mueller, Jenna L. Mueller, et al.. (2013). Hafnium Oxide Based CMOS Compatible Ferroelectric Materials. ECS Journal of Solid State Science and Technology. 2(4). N69–N72. 107 indexed citations
14.
Mueller, Stefan, Ekaterina Yurchuk, Stefan Slesazeck, et al.. (2013). Performance investigation and optimization of Si:HfO2 FeFETs on a 28 nm bulk technology. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 248–251. 23 indexed citations
15.
Müller, Johannes, Ekaterina Yurchuk, T. Schlösser, et al.. (2012). Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 25–26. 239 indexed citations
16.
Martin, Dominik, Ekaterina Yurchuk, Stefan Müller, et al.. (2012). Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 195–198. 3 indexed citations
17.
Schroeder, Uwe, Ekaterina Yurchuk, Stefan Mueller, et al.. (2012). Non-volatile data storage in HfO2-based ferroelectric FETs. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 33. 60–63. 6 indexed citations
18.
Yurchuk, Ekaterina, Johannes Müller, Raik Hoffmann, et al.. (2012). HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 1–4. 32 indexed citations
19.
Yurchuk, Ekaterina, Johannes Müller, Steve Knebel, et al.. (2012). Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films. Thin Solid Films. 533. 88–92. 163 indexed citations
20.
Yurchuk, Ekaterina, J. Bollmann, & Thomas Mikolajick. (2009). Characterisation of retention properties of charge-trapping memory cells at low temperatures. IOP Conference Series Materials Science and Engineering. 5. 12026–12026. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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