Maximilian Drescher

777 total citations · 1 hit paper
20 papers, 627 citations indexed

About

Maximilian Drescher is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Maximilian Drescher has authored 20 papers receiving a total of 627 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 3 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Maximilian Drescher's work include Semiconductor materials and devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Ferroelectric and Negative Capacitance Devices (8 papers). Maximilian Drescher is often cited by papers focused on Semiconductor materials and devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Ferroelectric and Negative Capacitance Devices (8 papers). Maximilian Drescher collaborates with scholars based in Germany, United States and Spain. Maximilian Drescher's co-authors include Thomas Mikolajick, Osami Sakata, Christoph Adelmann, Takao Shimizu, Tony Schenk, Uwe Schroeder, Alfred Kersch, Michael Hoffmann, Hiroshi Funakubo and Darius Pohl and has published in prestigious journals such as Nature Communications, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

Maximilian Drescher

18 papers receiving 614 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Stabilizing the ferroelectric phase in doped hafnium oxide

2015 481 citations Michael Hoffmann, Uwe Schroeder et al. Journal of Applied Physics profile →

Peers

Maximilian Drescher

EEE

AMPO

EOMM

Karine Florent Belgium

Roman Boschke Belgium

Ava J. Tan United States

Jan Paul Germany

Nujhat Tasneem United States

Chengji Jin China

Dirk Utess Germany

Jesús Calvo Germany

Christian Schleich Austria

Bernhard Stampfer Austria

Karine Florent Belgium

Maximilian Drescher

444 ×0.7

EEE

295 ×0.7

24 ×1.0

AMPO

23 ×1.1

16 ×1.8

EOMM

Citations per year, relative to Maximilian Drescher Maximilian Drescher (= 1×) peers Karine Florent

Countries citing papers authored by Maximilian Drescher

Since Specialization

Citations

This map shows the geographic impact of Maximilian Drescher's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Maximilian Drescher with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Maximilian Drescher more than expected).

Fields of papers citing papers by Maximilian Drescher

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Maximilian Drescher. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Maximilian Drescher. The network helps show where Maximilian Drescher may publish in the future.

Co-authorship network of co-authors of Maximilian Drescher

This figure shows the co-authorship network connecting the top 25 collaborators of Maximilian Drescher. A scholar is included among the top collaborators of Maximilian Drescher based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Maximilian Drescher. Maximilian Drescher is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

He, Yuqian, Viktor Havel, Stefan Slesazeck, et al.. (2025). Multiple-Independent-Gate Reconfigurable FETs Processed on Industrial 300 mm FDSOI. IEEE Electron Device Letters. 46(5). 689–692. 2 indexed citations

Deng, Marina, V. Sessi, Steffen Lehmann, et al.. (2024). Small-Signal Characterization and Modelling of a Back Bias Reconfigurable Field Effect Transistor. SPIRE - Sciences Po Institutional REpository. 741–744.

Trommer, Jens, Thomas Mikolajick, Stefanie Huhn, et al.. (2023). Design Enablement Flow for Circuits with Inherent Obfuscation based on Reconfigurable Transistors. 1–6. 2 indexed citations

Simon, Maik, Halid Mulaosmanovic, V. Sessi, et al.. (2022). Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor. Nature Communications. 13(1). 7042–7042. 36 indexed citations

Raffel, Yannick, Maximilian Drescher, Ricardo Olivo, et al.. (2022). Three Level Charge Pumping On Dielectric Hafnium Oxide Gate. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 1–4. 2 indexed citations

Raffel, Yannick, Ricardo Olivo, Maximilian Lederer, et al.. (2022). Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 1–4. 17 indexed citations

Sessi, V., Maik Simon, Stefan Slesazeck, et al.. (2021). S2–2 Back-Bias Reconfigurable Field Effect Transistor: A Flexible Add-On Functionality for 22 nm FDSOI. 1–2. 1 indexed citations

Tejedor, P., Maximilian Drescher, L. Vázquez, & L. Wilde. (2019). Epitaxial n++-InGaAs ultra-shallow junctions for highly scaled n-MOS devices. Applied Surface Science. 496. 143721–143721. 4 indexed citations

Calvo, Jesús, et al.. (2019). CMOS-compatible transition metal disilicide for integrated thermoelectric applications. Materials Today Proceedings. 8. 582–591. 2 indexed citations

10.

Kolodinski, Sabine, Clemens Mart, Wenke Weinreich, et al.. (2019). IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF. 74–77. 3 indexed citations

11.

Calvo, Jesús, Maximilian Drescher, Kati Kühnel, et al.. (2018). LPCVD in-situ doped silicon for thermoelectric applications. Materials Today Proceedings. 5(4). 10249–10256. 7 indexed citations

12.

Leitsmann, R., et al.. (2017). Nitrogen Engineering in the Ultrathin SiO2 Interface Layer of High- ${k}$ CMOS Devices: A First-Principles Investigation of Fluorine, Oxygen, and Boron Defect Migration. IEEE Transactions on Electron Devices. 64(12). 5073–5080. 2 indexed citations

13.

Leitsmann, R., et al.. (2017). Modeling the effects of lanthanum, nitrogen, and fluorine treatments of Si-SiON-HfO2-TiN gate stacks in 28 nm high-k-metal gate technology. Journal of Applied Physics. 121(23). 4 indexed citations

14.

Weinreich, Wenke, Konrad Seidel, P. Polakowski, et al.. (2016). La-doped ZrO₂ based BEoL decoupling capacitors. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 29. 1–4. 1 indexed citations

15.

Drescher, Maximilian, Andreas Naumann, Jonas Sundqvist, et al.. (2015). Fluorine interface treatments within the gate stack for defect passivation in 28 nm high-k metal gate technology. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 33(2). 10 indexed citations

16.

Müller, Johannes, P. Polakowski, Jan Paul, et al.. (2015). (Invited) Integration Challenges of Ferroelectric Hafnium Oxide Based Embedded Memory. ECS Transactions. 69(3). 85–95. 23 indexed citations

17.

Hoffmann, Michael, Uwe Schroeder, Tony Schenk, et al.. (2015). Stabilizing the ferroelectric phase in doped hafnium oxide. Journal of Applied Physics. 118(7). 481 indexed citations breakdown →

18.

Mchedlidze, Teimuraz, Maximilian Drescher, Elke Erben, & J. Weber. (2015). Capacitance Transient Spectroscopy Measurements on High-k Metal Gate Field Effect Transistors Fabricated Using 28nm Technology Node. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 242. 459–465.

19.

Ocker, J., Stefan Slesazeck, Thomas Mikolajick, et al.. (2014). Influence of nitrogen trap states on the electronic properties of high-k metal gate transistors. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 75. 86–89. 3 indexed citations

20.

Weinreich, Wenke, P. Polakowski, Maximilian Drescher, et al.. (2012). TEMAZ/O3 atomic layer deposition process with doubled growth rate and optimized interface properties in metal–insulator–metal capacitors. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 31(1). 27 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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