Ralf van Bentum

2.0k total citations
14 papers, 1.2k citations indexed

About

Ralf van Bentum is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Infectious Diseases. According to data from OpenAlex, Ralf van Bentum has authored 14 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 9 papers in Materials Chemistry and 0 papers in Infectious Diseases. Recurrent topics in Ralf van Bentum's work include Semiconductor materials and devices (12 papers), Ferroelectric and Negative Capacitance Devices (12 papers) and MXene and MAX Phase Materials (5 papers). Ralf van Bentum is often cited by papers focused on Semiconductor materials and devices (12 papers), Ferroelectric and Negative Capacitance Devices (12 papers) and MXene and MAX Phase Materials (5 papers). Ralf van Bentum collaborates with scholars based in Germany, United States and Belgium. Ralf van Bentum's co-authors include Thomas Mikolajick, Johannes Müller, Uwe Schroeder, Stefan Müller, Ekaterina Yurchuk, Stefan Slesazeck, Jan Paul, P. Polakowski, S. Flachowsky and Dominik Martin and has published in prestigious journals such as ACS Applied Materials & Interfaces, IEEE Transactions on Electron Devices and Solid-State Electronics.

In The Last Decade

Ralf van Bentum

14 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Ralf van Bentum Germany	9	1.1k	689	37	21	21	14	1.2k
Evelyn T. Breyer Germany	16	1.0k 0.9×	476 0.7×	55 1.5×	31 1.5×	11 0.5×	28	1.0k
Ricardo Olivo Germany	19	1.1k 1.0×	636 0.9×	38 1.0×	39 1.9×	16 0.8×	65	1.2k
J. Ocker Germany	11	1.3k 1.2×	701 1.0×	50 1.4×	52 2.5×	38 1.8×	21	1.4k
S. Flachowsky Germany	11	1.0k 0.9×	493 0.7×	65 1.8×	27 1.3×	11 0.5×	24	1.0k
Junghyeon Hwang South Korea	14	748 0.7×	419 0.6×	61 1.6×	30 1.4×	13 0.6×	32	770
Youngin Goh South Korea	18	1.2k 1.1×	757 1.1×	70 1.9×	51 2.4×	31 1.5×	30	1.3k
Jan Paul Germany	8	725 0.6×	426 0.6×	32 0.9×	10 0.5×	20 1.0×	17	748
Tamer San United States	11	864 0.8×	646 0.9×	50 1.4×	16 0.8×	23 1.1×	18	936
Ava J. Tan United States	16	955 0.8×	521 0.8×	32 0.9×	12 0.6×	10 0.5×	20	973
Lu Tai China	14	585 0.5×	332 0.5×	28 0.8×	24 1.1×	40 1.9×	48	620

Countries citing papers authored by Ralf van Bentum

Since Specialization

Citations

This map shows the geographic impact of Ralf van Bentum's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ralf van Bentum with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ralf van Bentum more than expected).

Fields of papers citing papers by Ralf van Bentum

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ralf van Bentum. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ralf van Bentum. The network helps show where Ralf van Bentum may publish in the future.

Co-authorship network of co-authors of Ralf van Bentum

This figure shows the co-authorship network connecting the top 25 collaborators of Ralf van Bentum. A scholar is included among the top collaborators of Ralf van Bentum based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ralf van Bentum. Ralf van Bentum is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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14 of 14 papers shown

Mulaosmanovic, Halid, J. Ocker, Stefan Müller, et al.. (2017). Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors. ACS Applied Materials & Interfaces. 9(4). 3792–3798. 273 indexed citations

Yurchuk, Ekaterina, Johannes Müller, Stefan Müller, et al.. (2016). Charge-Trapping Phenomena in HfO₂-Based FeFET-Type Nonvolatile Memories. IEEE Transactions on Electron Devices. 63(9). 3501–3507. 291 indexed citations

Schroeder, Uwe, Tony Schenk, Halid Mulaosmanovic, et al.. (2016). Impact of field cycling on HfO₂ based non-volatile memory devices. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 364–368. 6 indexed citations

Mulaosmanovic, Halid, Stefan Slesazeck, J. Ocker, et al.. (2015). Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 26.8.1–26.8.3. 115 indexed citations

Mikolajick, Thomas, Stefan Müller, Tony Schenk, et al.. (2014). Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors. Advances in science and technology. 95. 136–145. 60 indexed citations

Yurchuk, Ekaterina, Johannes Müller, Jan Paul, et al.. (2014). Impact of Scaling on the Performance of HfO₂-Based Ferroelectric Field Effect Transistors. IEEE Transactions on Electron Devices. 61(11). 3699–3706. 133 indexed citations

Yurchuk, Ekaterina, Stefan Mueller, Dominik Martin, et al.. (2014). Origin of the endurance degradation in the novel HfO<inf>2</inf>-based 1T ferroelectric non-volatile memories. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 2E.5.1–2E.5.5. 98 indexed citations

Schroeder, Uwe, Dominik Martin, Johannes Mueller, et al.. (2013). (Invited) Hafnium Oxide Based CMOS Compatible Ferroelectric Materials. ECS Transactions. 50(4). 15–20. 3 indexed citations

Martin, Dominik, Ekaterina Yurchuk, Stefan Müller, et al.. (2013). Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2. Solid-State Electronics. 88. 65–68. 42 indexed citations

10.

Schroeder, Uwe, Stefan Mueller, Jenna L. Mueller, et al.. (2013). Hafnium Oxide Based CMOS Compatible Ferroelectric Materials. ECS Journal of Solid State Science and Technology. 2(4). N69–N72. 107 indexed citations

11.

Venugopalan, Sriramkumar, et al.. (2013). SRAM read current variability and its dependence on transistor statistics. 1–4. 3 indexed citations

12.

Martin, Dominik, Ekaterina Yurchuk, Stefan Müller, et al.. (2012). Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO₂. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 195–198. 3 indexed citations

13.

Yurchuk, Ekaterina, Johannes Müller, Raik Hoffmann, et al.. (2012). HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 1–4. 32 indexed citations

14.

Bentum, Ralf van & H. Vogt. (1998). Structural characterization of local SIMOX-substrates. 49–50. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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