Ralf van Bentum

2.0k citations

14 papers · 1.2k indexed · h-index 9

Co-authors: Thomas Mikolajick Johannes Müller Uwe Schroeder Stefan Müller Ekaterina Yurchuk Stefan Slesazeck Jan Paul P. Polakowski
Topics: Semiconductor materials and devices (12 papers)Ferroelectric and Negative Capacitance Devices (12 papers)MXene and MAX Phase Materials (5 papers)
Cited by: Electrical and Electronic Engineering Materials Chemistry Hardware and Architecture
Journals: ACS Applied Materials & Interfaces IEEE Transactions on Electron Devices Solid-State Electronics
Partner nations: Germany United States Belgium

In The Last Decade

Ralf van Bentum

14 papers receiving 1.1k citations

Peers

Countries citing papers authored by Ralf van Bentum

Since Specialization

Citations

This map shows the geographic impact of Ralf van Bentum's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ralf van Bentum with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ralf van Bentum more than expected).

Fields of papers citing papers by Ralf van Bentum

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ralf van Bentum. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ralf van Bentum. The network helps show where Ralf van Bentum may publish in the future.

Co-authorship network of co-authors of Ralf van Bentum

This figure shows the co-authorship network connecting the top 25 collaborators of Ralf van Bentum. A scholar is included among the top collaborators of Ralf van Bentum based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ralf van Bentum. Ralf van Bentum is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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14 of 14 papers shown

#	Work	Indexed citations
1	Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors 2017 ·ACS Applied Materials & Interfaces ·Halid Mulaosmanovic,J. Ocker,Stefan Müller,Uwe Schroeder,Johannes Müller,P. Polakowski,S. Flachowsky,Ralf van Bentum,Thomas Mikolajick,Stefan Slesazeck	273
2	Charge-Trapping Phenomena in HfO₂-Based FeFET-Type Nonvolatile Memories 2016 ·IEEE Transactions on Electron Devices ·Ekaterina Yurchuk,Johannes Müller,Stefan Müller,Jan Paul,Milan Pešić,Ralf van Bentum,Uwe Schroeder,Thomas Mikolajick	291
3	Impact of field cycling on HfO₂ based non-volatile memory devices 2016 ·Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Uwe Schroeder,(unknown),Tony Schenk,Halid Mulaosmanovic,Stefan Slesazeck,J. Ocker,Claudia Richter,Ekaterina Yurchuk,(unknown),Johannes Müller,P. Polakowski,Everett D. Grimley,James M. LeBeau,S. Flachowsky,Sören Jansen,Sabine Kolodinski,Ralf van Bentum,Alfred Kersch,Christopher Künneth,Thomas Mikolajick	6
4	Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells 2015 ·Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Halid Mulaosmanovic,Stefan Slesazeck,J. Ocker,(unknown),Stefan Müller,S. Flachowsky,Johannes Müller,P. Polakowski,Paul Jarman,Sören Jansen,Sabine Kolodinski,Claudia Richter,(unknown),Tony Schenk,Alfred Kersch,Christopher Künneth,Ralf van Bentum,U. Schröder,Thomas Mikolajick	115
5	Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors 2014 ·Advances in science and technology ·Thomas Mikolajick,Stefan Müller,Tony Schenk,Ekaterina Yurchuk,Stefan Slesazeck,U. Schröder,S. Flachowsky,Ralf van Bentum,Sabine Kolodinski,P. Polakowski,Johannes Müller	60
6	Impact of Scaling on the Performance of HfO₂-Based Ferroelectric Field Effect Transistors 2014 ·IEEE Transactions on Electron Devices ·Ekaterina Yurchuk,Johannes Müller,Jan Paul,T. Schlösser,Dominik Martin,Raik Hoffmann,Stefan Mueller,Stefan Slesazeck,Uwe Schroeder,Roman Boschke,Ralf van Bentum,Thomas Mikolajick	133
7	Origin of the endurance degradation in the novel HfO<inf>2</inf>-based 1T ferroelectric non-volatile memories 2014 ·Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Ekaterina Yurchuk,Stefan Mueller,Dominik Martin,Stefan Slesazeck,Uwe Schroeder,Thomas Mikolajick,Johannes Müller,Jan Paul,Raik Hoffmann,Jonas Sundqvist,T. Schlösser,Roman Boschke,Ralf van Bentum,Martin Trentzsch	98
8	(Invited) Hafnium Oxide Based CMOS Compatible Ferroelectric Materials 2013 ·ECS Transactions ·Uwe Schroeder,Dominik Martin,Johannes Mueller,(unknown),Stefan Mueller,Christoph Adelmann,(unknown),Ralf van Bentum,Thomas Mikolajick	3
9	Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2 2013 ·Solid-State Electronics ·Dominik Martin,Ekaterina Yurchuk,Stefan Müller,Johannes Müller,Jan Paul,(unknown),Stefan Slesazeck,T. Schlösser,Ralf van Bentum,Martin Trentzsch,U. Schröder,Thomas Mikolajick	42
10	Hafnium Oxide Based CMOS Compatible Ferroelectric Materials 2013 ·ECS Journal of Solid State Science and Technology ·Uwe Schroeder,Stefan Mueller,Jenna L. Mueller,Ekaterina Yurchuk,Dominik Martin,Christoph Adelmann,(unknown),Ralf van Bentum,Thomas Mikolajick	107
11	SRAM read current variability and its dependence on transistor statistics 2013 ·Sriramkumar Venugopalan,Vivek Joshi,Luis Zamudio,(unknown),(unknown),Ralf van Bentum,Sriram Balasubramanian	3
12	Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO₂ 2012 ·Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Dominik Martin,Ekaterina Yurchuk,Stefan Müller,Johannes Müller,Jan Paul,(unknown),Stefan Slesazeck,(unknown),Ralf van Bentum,Martin Trentzsch,Uwe Schroeder,(unknown)	3
13	HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention 2012 ·Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Ekaterina Yurchuk,Johannes Müller,Raik Hoffmann,Paul Jarman,Dominik Martin,Roman Boschke,T. Schlösser,Stefan Müller,Stefan Slesazeck,Ralf van Bentum,Martin Trentzsch,U. Schröder,Thomas Mikolajick	32
14	Structural characterization of local SIMOX-substrates 1998 ·Ralf van Bentum,H. Vogt	2

About Ralf van Bentum

Ralf van Bentum is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Infectious Diseases, having authored 14 papers that have together received 1.2k indexed citations. Recurring topics across this work include Semiconductor materials and devices (12 papers), Ferroelectric and Negative Capacitance Devices (12 papers) and MXene and MAX Phase Materials (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.1k citations), Materials Chemistry (689 citations) and Hardware and Architecture (11 citations). Ralf van Bentum has collaborated with scholars based in Germany, United States and Belgium. Frequent co-authors include Thomas Mikolajick, Johannes Müller, Uwe Schroeder, Stefan Müller, Ekaterina Yurchuk, Stefan Slesazeck, Jan Paul, P. Polakowski, S. Flachowsky and Dominik Martin. Their work appears in journals such as ACS Applied Materials & Interfaces, IEEE Transactions on Electron Devices and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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