T. Schlösser

1.5k total citations
17 papers, 826 citations indexed

About

T. Schlösser is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, T. Schlösser has authored 17 papers receiving a total of 826 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 6 papers in Materials Chemistry. Recurrent topics in T. Schlösser's work include Ferroelectric and Negative Capacitance Devices (8 papers), Quantum and electron transport phenomena (8 papers) and Semiconductor materials and devices (8 papers). T. Schlösser is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (8 papers), Quantum and electron transport phenomena (8 papers) and Semiconductor materials and devices (8 papers). T. Schlösser collaborates with scholars based in Germany, United Kingdom and United States. T. Schlösser's co-authors include Ekaterina Yurchuk, Johannes Müller, Thomas Mikolajick, Roman Boschke, Raik Hoffmann, Stefan Slesazeck, Dominik Martin, K. Ensslin, M. Holland and Jan Paul and has published in prestigious journals such as Physical review. B, Condensed matter, Surface Science and Journal of Physics Condensed Matter.

In The Last Decade

T. Schlösser

17 papers receiving 808 citations

Peers

T. Schlösser

EEE

AMPO

CMP

G. J. Beirne Germany

Tobias Nowozin Germany

Hari S. Solanki India

Erik Cheah Switzerland

Frank Freitag Switzerland

Zhenghao Gu China

Hengyi Xu China

Mirza M. Elahi United States

Zhou Lu China

Dongchan Jeong South Korea

G. J. Beirne Germany

T. Schlösser

313 ×0.5

EEE

193 ×0.4

459 ×3.1

AMPO

40 ×0.9

CMP

70 ×2.3

Citations per year, relative to T. Schlösser T. Schlösser (= 1×) peers G. J. Beirne

Countries citing papers authored by T. Schlösser

Since Specialization

Citations

This map shows the geographic impact of T. Schlösser's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Schlösser with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Schlösser more than expected).

Fields of papers citing papers by T. Schlösser

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Schlösser. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Schlösser. The network helps show where T. Schlösser may publish in the future.

Co-authorship network of co-authors of T. Schlösser

This figure shows the co-authorship network connecting the top 25 collaborators of T. Schlösser. A scholar is included among the top collaborators of T. Schlösser based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Schlösser. T. Schlösser is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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17 of 17 papers shown

Yurchuk, Ekaterina, Johannes Müller, Jan Paul, et al.. (2014). Impact of Scaling on the Performance of HfO₂-Based Ferroelectric Field Effect Transistors. IEEE Transactions on Electron Devices. 61(11). 3699–3706. 133 indexed citations

Yurchuk, Ekaterina, Stefan Mueller, Dominik Martin, et al.. (2014). Origin of the endurance degradation in the novel HfO<inf>2</inf>-based 1T ferroelectric non-volatile memories. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 2E.5.1–2E.5.5. 98 indexed citations

Martin, Dominik, Ekaterina Yurchuk, Stefan Müller, et al.. (2013). Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2. Solid-State Electronics. 88. 65–68. 42 indexed citations

Mueller, Stefan, Johannes Müller, Raik Hoffmann, et al.. (2013). From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices. IEEE Transactions on Electron Devices. 60(12). 4199–4205. 119 indexed citations

Müller, Johannes, Ekaterina Yurchuk, T. Schlösser, et al.. (2012). Ferroelectricity in HfO₂ enables nonvolatile data storage in 28 nm HKMG. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 25–26. 239 indexed citations

Yurchuk, Ekaterina, Johannes Müller, Raik Hoffmann, et al.. (2012). HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 1–4. 32 indexed citations

Álvarez, David, Bernd Goebel, D. Manger, et al.. (2004). High-resolution scanning spreading resistance microscopy of surrounding-gate transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(1). 377–380. 2 indexed citations

Goebel, Bernd, et al.. (2003). Fully depleted surrounding gate transistor (SGT) for 70 nm DRAM and beyond. 275–278. 12 indexed citations

Kakoschke, R., et al.. (1999). The Influence of Fluorine on Various Mos Devices. MRS Proceedings. 567. 4 indexed citations

10.

Steffens, Oliver, T. Schlösser, K. Ensslin, et al.. (1998). From the two-dimensional electron gas to antidot superlattices: magnetoresistance effects in the transition regime. Journal of Physics Condensed Matter. 10(17). 3859–3872. 3 indexed citations

11.

Ensslin, K. & T. Schlösser. (1997). Experimental observation of an artificial band structure in lateral superlattices. Physica Scripta. T69. 26–29. 1 indexed citations

12.

Schlösser, T., K. Ensslin, J. P. Kotthaus, & M. Holland. (1996). Internal structure of a Landau band induced by a lateral superlattice: a glimpse of Hofstadter's butterfly. Europhysics Letters (EPL). 33(9). 683–688. 78 indexed citations

13.

Schlösser, T., K. Ensslin, J. P. Kotthaus, & M. Holland. (1996). Landau subbands generated by a lateral electrostatic superlattice - chasing the Hofstadter butterfly. Semiconductor Science and Technology. 11(11S). 1582–1585. 44 indexed citations

14.

Schlösser, T., K. Ensslin, J. P. Kotthaus, & M. Holland. (1996). Interplay of Landau band width and band separation in a square lateral superlattice. Surface Science. 361-362. 847–850. 8 indexed citations

15.

Ensslin, K. & T. Schlösser. (1996). Quantum transport in lateral superlattices. Physica Scripta. T66. 135–137. 3 indexed citations

16.

Schlösser, T., K. Ensslin, F. Claro, et al.. (1995). Corrugation-induced transverse voltage in a lateral superlattice. Physical review. B, Condensed matter. 51(16). 10737–10742. 7 indexed citations

17.

Schlösser, T., K. Ensslin, J. P. Kotthaus, et al.. (1994). Lateral potential modulation in InAs/AlSb quantum wells by wet etching. Solid-State Electronics. 37(4-6). 575–578. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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