T. Herrmann

676 total citations
40 papers, 512 citations indexed

About

T. Herrmann is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Molecular Biology. According to data from OpenAlex, T. Herrmann has authored 40 papers receiving a total of 512 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 4 papers in Materials Chemistry and 3 papers in Molecular Biology. Recurrent topics in T. Herrmann's work include Semiconductor materials and devices (24 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). T. Herrmann is often cited by papers focused on Semiconductor materials and devices (24 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). T. Herrmann collaborates with scholars based in Germany, United States and Singapore. T. Herrmann's co-authors include G. W. Rayfield, Adil E. Shamoo, Alban Zaka, Thomas Mikolajick, Ekaterina Yurchuk, Johannes Müller, Stefan Mueller, Ananda R. Jayaweera, S. Flachowsky and U. Schröder and has published in prestigious journals such as Biochemistry, Biophysical Journal and Annals of the New York Academy of Sciences.

In The Last Decade

T. Herrmann

38 papers receiving 477 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Herrmann Germany 11 285 127 125 119 77 40 512
Christopher D. Bostick United States 6 149 0.5× 111 0.9× 22 0.2× 73 0.6× 47 0.6× 6 294
Markus Büchner Germany 8 85 0.3× 80 0.6× 324 2.6× 26 0.2× 151 2.0× 21 474
Abdulghani Ismail France 9 237 0.8× 74 0.6× 72 0.6× 72 0.6× 255 3.3× 17 427
John Suehle United States 2 246 0.9× 114 0.9× 44 0.4× 90 0.8× 202 2.6× 2 408
Masao Oda Japan 8 160 0.6× 74 0.6× 173 1.4× 76 0.6× 21 0.3× 12 414
Amol V. Patil United Kingdom 14 186 0.7× 160 1.3× 72 0.6× 69 0.6× 138 1.8× 17 427
Evgeniy P. Lukashev Russia 8 60 0.2× 166 1.3× 171 1.4× 167 1.4× 53 0.7× 18 351
Louisa Reissig Japan 10 104 0.4× 62 0.5× 91 0.7× 101 0.8× 54 0.7× 28 295
Ioulia Tzouvadaki Switzerland 10 194 0.7× 110 0.9× 23 0.2× 116 1.0× 72 0.9× 20 271
David A. Köpfer Germany 5 104 0.4× 377 3.0× 52 0.4× 131 1.1× 144 1.9× 6 529

Countries citing papers authored by T. Herrmann

Since Specialization
Citations

This map shows the geographic impact of T. Herrmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Herrmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Herrmann more than expected).

Fields of papers citing papers by T. Herrmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Herrmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Herrmann. The network helps show where T. Herrmann may publish in the future.

Co-authorship network of co-authors of T. Herrmann

This figure shows the co-authorship network connecting the top 25 collaborators of T. Herrmann. A scholar is included among the top collaborators of T. Herrmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Herrmann. T. Herrmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Rack, Martin, Zhixing Zhao, Steffen Lehmann, et al.. (2023). High-resistivity with PN interface passivation in 22 nm FD-SOI technology for low-loss passives at RF and millimeter-wave frequencies. Solid-State Electronics. 205. 108656–108656. 8 indexed citations
3.
Herrmann, T., et al.. (2022). Current Considerations in Emergency Airway Management. Current Emergency and Hospital Medicine Reports. 10(4). 73–86. 4 indexed citations
4.
Zaka, Alban, et al.. (2022). Novel Hybrid SiGe-Silicon 5V pLDMOS on 28nm HKMG technology. 13–16.
5.
Rack, Martin, Zhixing Zhao, Steffen Lehmann, et al.. (2022). PN Junctions Interface Passivation in 22 nm FDSOI for Low-Loss Passives. Digital Access to Libraries (Université catholique de Louvain (UCL), l'Université de Namur (UNamur) and the Université Saint-Louis (USL-B)). 1–4. 1 indexed citations
6.
Zaka, Alban, T. Herrmann, Michael Otto, et al.. (2019). Low-Frequency Noise Reduction in 22FDX®: Impact of Device Geometry and Back Bias. 1–5. 4 indexed citations
7.
Bazizi, El Mehdi, Alban Zaka, T. Herrmann, et al.. (2014). USJ engineering impacts on FinFETs and RDF investigation using full 3D process/device simulation. 25–28. 4 indexed citations
8.
Flachowsky, S., et al.. (2013). Substrate dependent mobility and strain effects for silicon and SiGe transistor channels with HKMG first stacks. Solid-State Electronics. 88. 27–31. 1 indexed citations
9.
10.
Baldauf, Tim, A. Wei, S. Flachowsky, et al.. (2012). Strained isolation oxide as novel overall stress element for Tri-Gate transistors of 22nm CMOS and beyond. 61–63. 3 indexed citations
11.
Flachowsky, S., et al.. (2011). Mechanism of Stress Memorization Technique (SMT) and Method to Maximize Its Effect. IEEE Electron Device Letters. 32(4). 467–469. 10 indexed citations
12.
Baldauf, Tim, A. Wei, S. Flachowsky, et al.. (2011). Study of 22/20nm Tri-Gate transistors compatible in a low-cost hybrid FinFET/planar CMOS process. 1–2. 2 indexed citations
13.
Flachowsky, S., et al.. (2010). Understanding Strain-Induced Drive-Current Enhancement in Strained-Silicon n-MOSFET and p-MOSFET. IEEE Transactions on Electron Devices. 57(6). 1343–1354. 53 indexed citations
14.
Flachowsky, S., et al.. (2010). Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 28(1). C1G12–C1G17. 8 indexed citations
15.
16.
Flachowsky, S., et al.. (2008). Gate length scaling trends of drive current enhancement in CMOSFETs with dual stress overlayers and embedded-SiGe. Materials Science and Engineering B. 154-155. 98–101. 5 indexed citations
17.
Herrmann, T., Ananda R. Jayaweera, & Adil E. Shamoo. (1986). Interaction of europium(III) with phospholipid vesicles as monitored by laser-excited europium(III) luminescence. Biochemistry. 25(19). 5834–5838. 31 indexed citations
18.
Herrmann, T., P. Gangola, & Adil E. Shamoo. (1986). Estimation of inter‐binding‐site distances in sarcoplasmic reticulum (Ca2++Mg2+)‐ATPase using Eu(III) luminescence energy transfer. European Journal of Biochemistry. 158(3). 555–560. 24 indexed citations
19.
Herrmann, T. & G. W. Rayfield. (1978). The electrical response to light of bacteriorhodopsin in planar membranes. Biophysical Journal. 21(2). 111–125. 71 indexed citations
20.
Herrmann, T. & G. W. Rayfield. (1976). A measurement of the proton pump current generated by bacteriorhodopsin in black lipid membranes. Biochimica et Biophysica Acta (BBA) - Biomembranes. 443(3). 623–628. 47 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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