Jan Hoentschel

508 total citations
26 papers, 148 citations indexed

About

Jan Hoentschel is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Computer Networks and Communications. According to data from OpenAlex, Jan Hoentschel has authored 26 papers receiving a total of 148 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 3 papers in Biomedical Engineering and 1 paper in Computer Networks and Communications. Recurrent topics in Jan Hoentschel's work include Advancements in Semiconductor Devices and Circuit Design (22 papers), Semiconductor materials and devices (20 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). Jan Hoentschel is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (22 papers), Semiconductor materials and devices (20 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). Jan Hoentschel collaborates with scholars based in Germany, United States and France. Jan Hoentschel's co-authors include Μ. Horstmann, A. Wei, Oussama Moutanabbir, S. Flachowsky, Luca Pirro, Manfred Reiche, Maciej Wiatr, U. Gösele, Thomas Feudel and Alban Zaka and has published in prestigious journals such as IEEE Transactions on Electron Devices, Solid-State Electronics and Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena.

In The Last Decade

Jan Hoentschel

24 papers receiving 141 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jan Hoentschel Germany 8 142 27 14 7 5 26 148
J. Mazurier France 8 175 1.2× 17 0.6× 13 0.9× 4 0.6× 10 2.0× 22 177
R. Shaheed United States 4 169 1.2× 39 1.4× 9 0.6× 6 0.9× 10 2.0× 5 175
T.A. Karatsori France 10 246 1.7× 44 1.6× 14 1.0× 3 0.4× 9 1.8× 23 253
G.O. Workman United States 11 311 2.2× 19 0.7× 22 1.6× 10 1.4× 10 2.0× 24 323
F. Pagette United States 5 105 0.7× 12 0.4× 17 1.2× 4 0.6× 3 0.6× 6 110
Chih-Sheng Chang Taiwan 8 241 1.7× 32 1.2× 38 2.7× 9 1.3× 11 2.2× 18 250
V. Basker United States 5 144 1.0× 26 1.0× 6 0.4× 2 0.3× 9 1.8× 6 147
Stephen G. Beebe United States 11 316 2.2× 34 1.3× 10 0.7× 11 1.6× 3 0.6× 30 321
E. Josse France 11 298 2.1× 37 1.4× 29 2.1× 10 1.4× 18 3.6× 37 305

Countries citing papers authored by Jan Hoentschel

Since Specialization
Citations

This map shows the geographic impact of Jan Hoentschel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jan Hoentschel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jan Hoentschel more than expected).

Fields of papers citing papers by Jan Hoentschel

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jan Hoentschel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jan Hoentschel. The network helps show where Jan Hoentschel may publish in the future.

Co-authorship network of co-authors of Jan Hoentschel

This figure shows the co-authorship network connecting the top 25 collaborators of Jan Hoentschel. A scholar is included among the top collaborators of Jan Hoentschel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jan Hoentschel. Jan Hoentschel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhao, Zhixing, et al.. (2025). Substrate crosstalk characterization for optimized isolation in FDSOI. Solid-State Electronics. 227. 109117–109117.
2.
3.
Ravaux, Florent, Zhixing Zhao, Dirk Utess, et al.. (2021). Layout-Induced Strain Study for RF Performance Improvement of 22-nm UTBB FDSOI PFET. IEEE Transactions on Electron Devices. 68(7). 3230–3237. 2 indexed citations
4.
Zhao, Zhixing, Steffen Lehmann, Dirk Utess, et al.. (2021). 22FDSOI device towards RF and mmWave applications. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 8 indexed citations
5.
Hueting, R.J.E., et al.. (2020). Interface States Characterization of UTB SOI MOSFETs From the Subthreshold Current. IEEE Transactions on Electron Devices. 68(2). 497–502. 5 indexed citations
6.
Zaka, Alban, T. Herrmann, Michael Otto, et al.. (2019). Low-Frequency Noise Reduction in 22FDX®: Impact of Device Geometry and Back Bias. 1–5. 4 indexed citations
7.
Zhao, Zhixing, Steffen Lehmann, Luca Lucci, et al.. (2019). 22FDX® fMAX Optimization through Parasitics Reduction and GM Boost. SPIRE - Sciences Po Institutional REpository. 166–169. 11 indexed citations
8.
Hoentschel, Jan, et al.. (2019). 22FDX® Technologies for Ultra-Low Power IoT, RF and mmWave Applications. 2(1). 7 indexed citations
9.
Herrmann, T., et al.. (2019). Investigation of advanced FDSOI CMOS devices for analog/mixed signal applications. 6. 1–3. 2 indexed citations
10.
Pirro, Luca, Alban Zaka, Michael Otto, et al.. (2018). RTN and LFN Noise Performance in Advanced FDSOI Technology. 254–257. 7 indexed citations
11.
Andrieu, F., Luca Pirro, G. Cibrario, et al.. (2018). Design Technology Co-Optimization in advanced FDSOI CMOS around the Minimum Energy Point: body biasing and within-cell V<inf>T</inf>-mixing. HAL (Le Centre pour la Communication Scientifique Directe). 153–154. 4 indexed citations
12.
13.
Bazizi, El Mehdi, Alban Zaka, Thomas Herrmann, et al.. (2017). Versatile technology modeling for 22FDX platform development. 365–368. 5 indexed citations
14.
Horstmann, Μ., Jan Hoentschel, & J. Schaeffer. (2012). Taking the next step on advanced HKMG SOI technologies &#x2014; From 32nm PD SOI volume production to 28nm FD SOI and beyond. 1–2. 1 indexed citations
15.
Baldauf, Tim, A. Wei, S. Flachowsky, et al.. (2012). Strained isolation oxide as novel overall stress element for Tri-Gate transistors of 22nm CMOS and beyond. 61–63. 3 indexed citations
16.
Hähnel, Angelika, Manfred Reiche, Oussama Moutanabbir, et al.. (2011). Nano‐beam electron diffraction evaluation of strain behaviour in nano‐scale patterned strained silicon‐on‐insulator. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(4). 1319–1324. 6 indexed citations
17.
18.
Horstmann, Μ., et al.. (2009). Advanced SOI CMOS transistor technologies for high-performance microprocessor applications. 114 115. 149–152. 14 indexed citations
19.
Horstmann, Μ., et al.. (2009). Advanced SOI CMOS transistor technology for high performance microprocessors. Solid-State Electronics. 53(12). 1212–1219. 5 indexed citations
20.
Wei, A., Maciej Wiatr, A. U. Gehring, et al.. (2007). Multiple Stress Memorization In Advanced SOI CMOS Technologies. 216–217. 24 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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