Ava J. Tan

2.1k total citations
20 papers, 973 citations indexed

About

Ava J. Tan is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Infectious Diseases. According to data from OpenAlex, Ava J. Tan has authored 20 papers receiving a total of 973 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 12 papers in Materials Chemistry and 0 papers in Infectious Diseases. Recurrent topics in Ava J. Tan's work include Ferroelectric and Negative Capacitance Devices (20 papers), Semiconductor materials and devices (19 papers) and MXene and MAX Phase Materials (11 papers). Ava J. Tan is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (20 papers), Semiconductor materials and devices (19 papers) and MXene and MAX Phase Materials (11 papers). Ava J. Tan collaborates with scholars based in United States, South Korea and Germany. Ava J. Tan's co-authors include Sayeef Salahuddin, Chenming Hu, Yu-Hung Liao, Korok Chatterjee, Daewoong Kwon, Ajay K. Yadav, Nirmaan Shanker, Jong‐Ho Bae, Suraj Cheema and Li‐Chen Wang and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

Ava J. Tan

20 papers receiving 945 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Ava J. Tan United States	16	955	521	32	17	12	20	973
Ralf van Bentum Germany	9	1.1k 1.2×	689 1.3×	37 1.2×	20 1.2×	21 1.8×	14	1.2k
Evelyn T. Breyer Germany	16	1.0k 1.1×	476 0.9×	55 1.7×	14 0.8×	31 2.6×	28	1.0k
Nirmaan Shanker United States	10	607 0.6×	360 0.7×	54 1.7×	13 0.8×	10 0.8×	22	670
Chengji Jin China	12	516 0.5×	236 0.5×	38 1.2×	30 1.8×	18 1.5×	52	541
P. Steinke Germany	9	538 0.6×	318 0.6×	33 1.0×	5 0.3×	11 0.9×	12	567
B. Pätzold Germany	8	534 0.6×	311 0.6×	25 0.8×	5 0.3×	11 0.9×	9	545
Jan Paul Germany	8	725 0.8×	426 0.8×	32 1.0×	18 1.1×	10 0.8×	17	748
Zhaomeng Gao China	11	496 0.5×	410 0.8×	37 1.2×	7 0.4×	12 1.0×	31	557
Junghyeon Hwang South Korea	14	748 0.8×	419 0.8×	61 1.9×	12 0.7×	30 2.5×	32	770
Karine Florent Belgium	11	444 0.5×	295 0.6×	23 0.7×	24 1.4×	7 0.6×	20	479

Countries citing papers authored by Ava J. Tan

Since Specialization

Citations

This map shows the geographic impact of Ava J. Tan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ava J. Tan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ava J. Tan more than expected).

Fields of papers citing papers by Ava J. Tan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ava J. Tan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ava J. Tan. The network helps show where Ava J. Tan may publish in the future.

Co-authorship network of co-authors of Ava J. Tan

This figure shows the co-authorship network connecting the top 25 collaborators of Ava J. Tan. A scholar is included among the top collaborators of Ava J. Tan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ava J. Tan. Ava J. Tan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Hoffmann, Michael, Ava J. Tan, Nirmaan Shanker, et al.. (2022). Write Disturb-Free Ferroelectric FETs With Non-Accumulative Switching Dynamics. IEEE Electron Device Letters. 43(12). 2097–2100. 12 indexed citations

Hoffmann, Michael, Ava J. Tan, Nirmaan Shanker, et al.. (2022). Fast Read-After-Write and Depolarization Fields in High Endurance n-Type Ferroelectric FETs. IEEE Electron Device Letters. 43(5). 717–720. 41 indexed citations

Liao, Yu-Hung, Daewoong Kwon, Suraj Cheema, et al.. (2021). Electric Field-Induced Permittivity Enhancement in Negative-Capacitance FET. IEEE Transactions on Electron Devices. 68(3). 1346–1351. 10 indexed citations

Tan, Ava J., Yu-Hung Liao, Li‐Chen Wang, et al.. (2021). Ferroelectric HfO₂ Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 10¹⁰ Cycles. IEEE Electron Device Letters. 42(7). 994–997. 162 indexed citations

Bae, Jong‐Ho, Daewoong Kwon, Suraj Cheema, et al.. (2020). Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors. IEEE Electron Device Letters. 41(11). 1637–1640. 50 indexed citations

Tan, Ava J., Li‐Chen Wang, Yu-Hung Liao, et al.. (2020). Reliability of Ferroelectric HfO₂-based Memories: From MOS Capacitor to FeFET. 1–2. 7 indexed citations

Tan, Ava J., Milan Pešić, Luca Larcher, et al.. (2020). Hot Electrons as the Dominant Source of Degradation for Sub-5nm HZO FeFETs. IRIS UNIMORE (University of Modena and Reggio Emilia). 1–2. 45 indexed citations

Kwon, Daewoong, Suraj Cheema, Nirmaan Shanker, et al.. (2019). Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO₂ Oxide. IEEE Electron Device Letters. 40(6). 993–996. 115 indexed citations

Kwon, Daewoong, Suraj Cheema, Yen-Kai Lin, et al.. (2019). Near Threshold Capacitance Matching in a Negative Capacitance FET With 1 nm Effective Oxide Thickness Gate Stack. IEEE Electron Device Letters. 41(1). 179–182. 28 indexed citations

10.

Tan, Ava J., et al.. (2019). Ferroelectric Si-doped HfO₂ Capacitors for Next-Generation Memories. 1–2. 1 indexed citations

11.

Chatterjee, Korok, Sangwan Kim, Golnaz Karbasian, et al.. (2019). Challenges to Partial Switching of Hf_0.8Zr_0.2O₂ Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation. IEEE Electron Device Letters. 40(9). 1423–1426. 30 indexed citations

12.

Tan, Ava J., Korok Chatterjee, Jiuren Zhou, et al.. (2019). Experimental Demonstration of a Ferroelectric HfO₂-Based Content Addressable Memory Cell. IEEE Electron Device Letters. 41(2). 240–243. 49 indexed citations

13.

Liao, Yu-Hung, Daewoong Kwon, Yen-Kai Lin, et al.. (2019). Anomalously Beneficial Gate-Length Scaling Trend of Negative Capacitance Transistors. IEEE Electron Device Letters. 40(11). 1860–1863. 19 indexed citations

14.

Kwon, Daewoong, Yu-Hung Liao, Yen-Kai Lin, et al.. (2018). Response Speed of Negative Capacitance FinFETs. 49–50. 30 indexed citations

15.

Zhou, Hong, Daewoong Kwon, Angada B. Sachid, et al.. (2018). Negative Capacitance, n-Channel, Si FinFETs: Bi-directional Sub-60 mV/dec, Negative DIBL, Negative Differential Resistance and Improved Short Channel Effect. 53–54. 51 indexed citations

16.

Chatterjee, Korok, Sangwan Kim, Golnaz Karbasian, et al.. (2017). Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf_0.8Zr_0.2O₂, High Endurance and Breakdown Recovery. IEEE Electron Device Letters. 38(10). 1379–1382. 84 indexed citations

17.

Karbasian, Golnaz, Ava J. Tan, Ajay K. Yadav, et al.. (2017). Ferroelectricity in HfO<inf>2</inf> thin films as a function of Zr doping. 1–2. 15 indexed citations

18.

Kwon, Daewoong, Korok Chatterjee, Ava J. Tan, et al.. (2017). Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors. IEEE Electron Device Letters. 39(2). 300–303. 124 indexed citations

19.

Tan, Ava J., Ajay K. Yadav, Korok Chatterjee, et al.. (2017). A Nitrided Interfacial Oxide for Interface State Improvement in Hafnium Zirconium Oxide-Based Ferroelectric Transistor Technology. IEEE Electron Device Letters. 39(1). 95–98. 31 indexed citations

20.

Karbasian, Golnaz, Roberto dos Reis, Ajay K. Yadav, et al.. (2017). Stabilization of ferroelectric phase in tungsten capped Hf0.8Zr0.2O2. Applied Physics Letters. 111(2). 69 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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