C. Claeys

567 total citations
45 papers, 437 citations indexed

About

C. Claeys is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, C. Claeys has authored 45 papers receiving a total of 437 indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Electrical and Electronic Engineering, 13 papers in Atomic and Molecular Physics, and Optics and 1 paper in Condensed Matter Physics. Recurrent topics in C. Claeys's work include Semiconductor materials and devices (35 papers), Advancements in Semiconductor Devices and Circuit Design (30 papers) and Integrated Circuits and Semiconductor Failure Analysis (16 papers). C. Claeys is often cited by papers focused on Semiconductor materials and devices (35 papers), Advancements in Semiconductor Devices and Circuit Design (30 papers) and Integrated Circuits and Semiconductor Failure Analysis (16 papers). C. Claeys collaborates with scholars based in Belgium, Japan and Ukraine. C. Claeys's co-authors include E. Simoen, Eddy Simoen, Amporn Poyai, A. Czerwiński, E. Simoen, P. Clauws, Edward Young, A. Mercha, João Antônio Martino and J. Kątcki and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

C. Claeys

42 papers receiving 413 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Claeys Belgium 13 421 100 57 37 17 45 437
E. Simoen Belgium 13 401 1.0× 104 1.0× 57 1.0× 27 0.7× 21 1.2× 35 424
M. Valdinoci Italy 12 507 1.2× 75 0.8× 98 1.7× 50 1.4× 11 0.6× 24 536
S. Martinie France 13 491 1.2× 41 0.4× 41 0.7× 98 2.6× 9 0.5× 42 530
Hongliang Lü China 11 310 0.7× 62 0.6× 42 0.7× 40 1.1× 14 0.8× 83 345
Y. Yeh United States 7 132 0.3× 84 0.8× 38 0.7× 12 0.3× 14 0.8× 31 175
V. Aubry-Fortuna France 9 420 1.0× 246 2.5× 40 0.7× 38 1.0× 5 0.3× 30 442
A.T. Wu United States 13 417 1.0× 104 1.0× 48 0.8× 27 0.7× 5 0.3× 28 434
J.L. Pelloie France 14 771 1.8× 31 0.3× 27 0.5× 33 0.9× 12 0.7× 72 780
M. Yoshimi Japan 14 722 1.7× 84 0.8× 73 1.3× 101 2.7× 3 0.2× 54 743
K.L. Hughes United States 8 529 1.3× 22 0.2× 55 1.0× 10 0.3× 12 0.7× 17 543

Countries citing papers authored by C. Claeys

Since Specialization
Citations

This map shows the geographic impact of C. Claeys's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Claeys with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Claeys more than expected).

Fields of papers citing papers by C. Claeys

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Claeys. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Claeys. The network helps show where C. Claeys may publish in the future.

Co-authorship network of co-authors of C. Claeys

This figure shows the co-authorship network connecting the top 25 collaborators of C. Claeys. A scholar is included among the top collaborators of C. Claeys based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Claeys. C. Claeys is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lajaunie, Luc, Marie‐Laure David, F. Pailloux, et al.. (2008). Influence of the pre-treatment anneal on Co–germanide Schottky contacts. Materials Science in Semiconductor Processing. 11(5-6). 300–304. 7 indexed citations
2.
Ohyama, H., et al.. (2007). Radiation damages of GaAlAs LEDs by 70-MeV proton and 2-MeV electron irradiation. Journal of Materials Science Materials in Electronics. 19(2). 171–173.
3.
Simoen, Eddy, Mireia Bargalló González, Geert Eneman, et al.. (2007). Germanium content dependence of the leakage current of recessed SiGe source/drain junctions. Journal of Materials Science Materials in Electronics. 18(7). 787–791. 9 indexed citations
4.
Todi, R, et al.. (2007). On the origin of the 1∕f noise in shallow germanium p+-n junctions. Applied Physics Letters. 90(4). 4 indexed citations
5.
Opsomer, Karl, C. Claeys, Karen Maex, et al.. (2006). A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium. Materials Science in Semiconductor Processing. 9(4-5). 554–558. 10 indexed citations
6.
Okada, Shuichi, H. Ohyama, J.M. Rafı́, et al.. (2006). Investigation of back gate interface states by drain current hysteresis in PD-SOI n-MOSFETs. Physica B Condensed Matter. 376-377. 416–419. 7 indexed citations
7.
David, Marie‐Laure, E. Simoen, C. Claeys, & Ali Mohammadzadeh. (2005). Bias dependence of gate oxide degradation of 90 nm CMOS transistors under 60 MeV proton irradiation. 48. G3–1. 1 indexed citations
8.
Simoen, E., C. Claeys, N. Lukyanchikova, et al.. (2005). Electron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETs. Solid-State Electronics. 50(1). 52–57. 7 indexed citations
9.
10.
Simoen, E., A. Mercha, C. Claeys, & Edward Young. (2004). Correlation between the 1∕f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal–oxide–semiconductor field-effect transistors. Applied Physics Letters. 85(6). 1057–1059. 30 indexed citations
11.
Simoen, E., et al.. (2002). Defect assessment of irradiated STI diodes. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 186(1-4). 424–428. 3 indexed citations
12.
Ohyama, H., et al.. (1999). Effect of irradiation in InGaAs photo devices. Journal of Radioanalytical and Nuclear Chemistry. 239(2). 361–364.
13.
Claeys, C., et al.. (1999). Factors determining the lifetime damage coefficients and the low-frequency noise in MeV proton irradiated silicon diodes. Journal of Radioanalytical and Nuclear Chemistry. 239(1). 207–211. 2 indexed citations
14.
Claeys, C. & Eddy Simoen. (1998). Noise as a Diagnostic Tool for Semiconductor Material and Device Characterization. Journal of The Electrochemical Society. 145(6). 2058–2067. 31 indexed citations
15.
Claeys, C., E. Simoen, & Jan Vanhellemont. (1997). Electrical and Structural Properties of Oxygen-Precipitation Induced Extended Defects in Silicon. Journal de Physique III. 7(7). 1469–1486. 12 indexed citations
16.
Simoen, E. & C. Claeys. (1995). Low-frequency noise characterisation of γ-irradiated silicon-on-insulator MOSFETs. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 95(1). 75–81. 2 indexed citations
17.
Simoen, Eddy & C. Claeys. (1995). Substrate current characteristics in partially depleted silicon-on-insulator n-MOSFETs from room temperature down to 4.2 K. Cryogenics. 35(5). 321–326. 2 indexed citations
18.
Simoen, E., et al.. (1995). Low-frequency noise behaviour of high-energy electronirradiated Si n + p junction diodes. Electronics Letters. 31(12). 1016–1018. 6 indexed citations
19.
Simoen, E. & C. Claeys. (1994). The use of body ties in partially depleted SOI MOSTs operating at cryogenic temperatures. Solid-State Electronics. 37(12). 1933–1936. 3 indexed citations
20.
Simoen, Eddy & C. Claeys. (1993). Low-frequency noise behavior of γ-irradiated partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor transistors. Applied Physics Letters. 63(12). 1672–1674. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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