G. Nicholas

749 total citations
19 papers, 401 citations indexed

About

G. Nicholas is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, G. Nicholas has authored 19 papers receiving a total of 401 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 5 papers in Atomic and Molecular Physics, and Optics and 3 papers in Biomedical Engineering. Recurrent topics in G. Nicholas's work include Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Semiconductor materials and interfaces (4 papers). G. Nicholas is often cited by papers focused on Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Semiconductor materials and interfaces (4 papers). G. Nicholas collaborates with scholars based in Belgium, United Kingdom and Greece. G. Nicholas's co-authors include Marc Meuris, Brice De Jaeger, Marc Heyns, D.P. Brunco, Paul Zimmerman, Geert Eneman, Michel Houssa, Frederik Leys, Koen Martens and Matty Caymax and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

G. Nicholas

17 papers receiving 389 citations

Peers

G. Nicholas
Wei-Yip Loh United States
Wei Yip Loh Singapore
Ming Zhu Singapore
B. Junginger Germany
E. Simoen Belgium
M. Minondo France
S. Brus Belgium
S. Hardikar United Kingdom
Wei-Yip Loh United States
G. Nicholas
Citations per year, relative to G. Nicholas G. Nicholas (= 1×) peers Wei-Yip Loh

Countries citing papers authored by G. Nicholas

Since Specialization
Citations

This map shows the geographic impact of G. Nicholas's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Nicholas with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Nicholas more than expected).

Fields of papers citing papers by G. Nicholas

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Nicholas. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Nicholas. The network helps show where G. Nicholas may publish in the future.

Co-authorship network of co-authors of G. Nicholas

This figure shows the co-authorship network connecting the top 25 collaborators of G. Nicholas. A scholar is included among the top collaborators of G. Nicholas based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Nicholas. G. Nicholas is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Nicholas, G., D.P. Brunco, A. Dimoulas, et al.. (2007). Germanium MOSFETs With $\hbox{CeO}_{2}/\hbox{HfO}_{2}/ \hbox{TiN}$ Gate Stacks. IEEE Transactions on Electron Devices. 54(6). 1425–1430. 34 indexed citations
2.
Brunco, D.P., Brice De Jaeger, Geert Eneman, et al.. (2007). Germanium: The Past and Possibly a Future Material for Microelectronics. ECS Transactions. 11(4). 479–493. 31 indexed citations
3.
Eneman, Geert, Eddy Simoen, D.P. Brunco, et al.. (2007). Analysis of junction leakage in advanced germanium P+/n junctions. 454–457. 10 indexed citations
4.
Nicholas, G., et al.. (2007). High Mobility Strained Ge pMOSFETs With High-$\kappa$ /Metal Gate. IEEE Electron Device Letters. 28(9). 825–827. 33 indexed citations
5.
Guo, Weiming, G. Nicholas, B. Kaczer, et al.. (2007). Low-Frequency Noise Assessment of Silicon Passivated Ge pMOSFETs With TiN/TaN/ $\hbox{HfO}_{2}$ Gate Stack. IEEE Electron Device Letters. 28(4). 288–291. 31 indexed citations
6.
Kaczer, B., Brice De Jaeger, G. Nicholas, et al.. (2007). Electrical and reliability characterization of metal-gate/HfO2/Ge FET’s with Si passivation. Microelectronic Engineering. 84(9-10). 2067–2070. 30 indexed citations
7.
Jaeger, Brice De, G. Nicholas, D.P. Brunco, et al.. (2007). High Performance High-k/Metal Gate Ge pMOSFETs with gate lengths down to 125 nm and halo implant. 462–465. 10 indexed citations
8.
Parker, E. H. C., D. R. Leadley, Brice De Jaeger, et al.. (2007). Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters. 91(26). 4 indexed citations
9.
Satta, A., Eddy Simoen, Benny Van Daele, et al.. (2007). Junction formation in Ge by ion implantation. 297–304.
10.
Nicholas, G., Brice De Jaeger, D.P. Brunco, et al.. (2007). High-Performance Deep Submicron Ge pMOSFETs With Halo Implants. IEEE Transactions on Electron Devices. 54(9). 2503–2511. 75 indexed citations
11.
Dimoulas, A., Y. Panayiotatos, A. Sotiropoulos, et al.. (2007). Germanium FETs and capacitors with rare earth CeO2/HfO2 gates. Solid-State Electronics. 51(11-12). 1508–1514. 20 indexed citations
12.
Zimmerman, Paul, G. Nicholas, Brice De Jaeger, et al.. (2006). High performance Ge pMOS devices using a Si-compatible process flow. 1–4. 86 indexed citations
13.
Dimoulas, A., Y. Panayiotatos, A. Sotiropoulos, et al.. (2006). Germanium FETs and capacitors with rare earth CeO2/HfO2 gates. 88. 142–145. 1 indexed citations
14.
Houssa, Michel, Thierry Conard, Jan Van Steenbergen, et al.. (2006). Characterization of Atomic-Beam Deposited GeO1-xNx/HfO2 Stacks on Ge. ECS Transactions. 1(5). 9–16. 4 indexed citations
15.
Satta, A., G. Nicholas, Eddy Simoen, et al.. (2006). Impact of germanium surface passivation on the leakage current of shallow planar p–n junctions. Materials Science in Semiconductor Processing. 9(4-5). 716–720. 16 indexed citations
16.
Nicholas, G., T. J. Grasby, E. H. C. Parker, T. E. Whall, & T. Skotnicki. (2005). Impact ionization in strained Si devices. Journal of Applied Physics. 98(10). 5 indexed citations
17.
Nicholas, G., T. J. Grasby, E. H. C. Parker, T. E. Whall, & T. Skotnicki. (2005). Evidence of reduced self-heating in strained Si MOSFETs. IEEE Electron Device Letters. 26(9). 684–686. 10 indexed citations
18.
Nicholas, G., T. J. Grasby, E. H. C. Parker, et al.. (2005). Investigation of the injection velocity of holes in strained Si pMOSFETs. Semiconductor Science and Technology. 20(5). L20–L22. 1 indexed citations
19.
Nicholas, G., A. Dobbie, T. J. Grasby, T. E. Whall, & E. H. C. Parker. (2005). Impact ionisation in strained SiGe pMOSFETs. Electronics Letters. 41(16). 925–926.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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