Abhinav Gaur

483 total citations
13 papers, 255 citations indexed

About

Abhinav Gaur is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Abhinav Gaur has authored 13 papers receiving a total of 255 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Abhinav Gaur's work include Ferroelectric and Negative Capacitance Devices (8 papers), Semiconductor materials and devices (7 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). Abhinav Gaur is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (8 papers), Semiconductor materials and devices (7 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). Abhinav Gaur collaborates with scholars based in Belgium, United States and Singapore. Abhinav Gaur's co-authors include Dennis Lin, Iuliana Radu, Inge Asselberghs, Marc Heyns, Goutham Arutchelvan, Benjamin Groven, Julien Jussot, Quentin Smets, Devin Verreck and Salim El Kazzi and has published in prestigious journals such as Journal of Applied Physics, Chemistry of Materials and Scientific Reports.

In The Last Decade

Abhinav Gaur

13 papers receiving 250 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Abhinav Gaur Belgium 10 195 174 73 30 10 13 255
Minju Shin South Korea 9 232 1.2× 236 1.4× 71 1.0× 30 1.0× 6 0.6× 16 336
Bernhard Stampfer Austria 12 327 1.7× 149 0.9× 30 0.4× 16 0.5× 15 1.5× 31 376
Junyoung Kwon South Korea 2 108 0.6× 137 0.8× 37 0.5× 17 0.6× 12 1.2× 3 191
Amithraj Valsaraj United States 7 205 1.1× 293 1.7× 55 0.8× 60 2.0× 9 0.9× 14 348
Alexander Hötger Germany 9 115 0.6× 149 0.9× 50 0.7× 68 2.3× 22 2.2× 12 231
Kristan Bryan Simbulan Taiwan 9 118 0.6× 143 0.8× 55 0.8× 42 1.4× 22 2.2× 20 223
Sergio I. Rey Japan 3 122 0.6× 229 1.3× 45 0.6× 54 1.8× 9 0.9× 3 259
Farid Sebaai Belgium 10 397 2.0× 85 0.5× 91 1.2× 56 1.9× 21 2.1× 41 411
Pratyush Pandey United States 9 325 1.7× 142 0.8× 45 0.6× 24 0.8× 13 1.3× 15 361
Kuen-Yi Chen Taiwan 10 339 1.7× 196 1.1× 22 0.3× 26 0.9× 11 1.1× 18 346

Countries citing papers authored by Abhinav Gaur

Since Specialization
Citations

This map shows the geographic impact of Abhinav Gaur's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Abhinav Gaur with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Abhinav Gaur more than expected).

Fields of papers citing papers by Abhinav Gaur

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Abhinav Gaur. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Abhinav Gaur. The network helps show where Abhinav Gaur may publish in the future.

Co-authorship network of co-authors of Abhinav Gaur

This figure shows the co-authorship network connecting the top 25 collaborators of Abhinav Gaur. A scholar is included among the top collaborators of Abhinav Gaur based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Abhinav Gaur. Abhinav Gaur is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

13 of 13 papers shown
1.
Iakoubovskii, Konstantin, et al.. (2025). Energy band alignment in MoS2/HfO2: Transfer-related artifacts and interfacial effects. Journal of Applied Physics. 137(24). 1 indexed citations
2.
Iakoubovskii, Konstantin, Abhinav Gaur, Dennis Lin, et al.. (2021). Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2 and WS2 films from photoconductivity spectra. Journal of Applied Physics. 129(15). 8 indexed citations
3.
Arutchelvan, Goutham, Quentin Smets, Devin Verreck, et al.. (2021). Impact of device scaling on the electrical properties of MoS2 field-effect transistors. Scientific Reports. 11(1). 6610–6610. 52 indexed citations
4.
Gaur, Abhinav, Tarun Agarwal, Inge Asselberghs, et al.. (2020). A MOS capacitor model for ultra-thin 2D semiconductors: the impact of interface defects and channel resistance. 2D Materials. 7(3). 35018–35018. 19 indexed citations
5.
Asselberghs, Inge, T. Schram, Quentin Smets, et al.. (2020). Scaled transistors with 2D materials from the 300mm fab. 9 indexed citations
6.
Gaur, Abhinav, Daniele Chiappe, Dennis Lin, et al.. (2019). Analysis of admittance measurements of MOS capacitors on CVD grown bilayer MoS 2. 2D Materials. 6(3). 35035–35035. 26 indexed citations
7.
Smets, Quentin, Goutham Arutchelvan, Julien Jussot, et al.. (2019). Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contact pitch and 250µA/µm drain current. 23.2.1–23.2.4. 62 indexed citations
8.
Zhang, Haodong, Goutham Arutchelvan, Johan Meersschaut, et al.. (2017). MoS2 Functionalization with a Sub-nm Thin SiO2 Layer for Atomic Layer Deposition of High-κ Dielectrics. Chemistry of Materials. 29(16). 6772–6780. 33 indexed citations
9.
Gaur, Abhinav, Yashwanth Balaji, Dennis Lin, et al.. (2017). Demonstration of 2e12 cm−2eV−1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5 nm EOT. Microelectronic Engineering. 178. 145–149. 10 indexed citations
10.
Gaur, Abhinav, et al.. (2015). Surface treatments to reduce leakage current in In0.53Ga0.47As p-i-n diodes. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 33(2). 2 indexed citations
11.
Manuel, Pascal, Juan Salvador Rojas-Ramírez, Ravi Droopad, et al.. (2015). Integration of broken-gap heterojunction InAs/GaSb Esaki tunnel diodes on silicon. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 33(6). 13 indexed citations
12.
Thomas, Paul M., Abhinav Gaur, Brian Romanczyk, et al.. (2015). Performance Evaluation of In0.53Ga0.47As Esaki Tunnel Diodes on Silicon and InP Substrates. IEEE Transactions on Electron Devices. 62(8). 2450–2456. 9 indexed citations
13.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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