T. Kanarsky

1.5k citations

15 papers · 718 indexed · h-index 10

Co-authors: H.‐S. Philip Wong M. Ieong R. Roy J. KedzierskiYing ZhangD. Boyd David Fried E. Nowak
Topics: Advancements in Semiconductor Devices and Circuit Design (15 papers)Semiconductor materials and devices (15 papers)Silicon Carbide Semiconductor Technologies (5 papers)
Cited by: Electrical and Electronic Engineering Biomedical Engineering Atomic and Molecular Physics, and Optics
Journals: IEEE Transactions on Electron Devices IEEE Electron Device LettersEuropean Solid-State Device Research Conference
Partner nations: United States

In The Last Decade

T. Kanarsky

15 papers receiving 663 citations

Peers

Countries citing papers authored by T. Kanarsky

Since Specialization

Citations

This map shows the geographic impact of T. Kanarsky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Kanarsky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Kanarsky more than expected).

Fields of papers citing papers by T. Kanarsky

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Kanarsky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Kanarsky. The network helps show where T. Kanarsky may publish in the future.

Co-authorship network of co-authors of T. Kanarsky

This figure shows the co-authorship network connecting the top 25 collaborators of T. Kanarsky. A scholar is included among the top collaborators of T. Kanarsky based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Kanarsky. T. Kanarsky is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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15 of 15 papers shown

#	Work	Indexed citations
1	Assessment of fully-depleted planar CMOS for low power complex circuit operation 2011 ·Zhibin Ren,S. Mehta,Jian Cai,S. Wu,(unknown),T. Kanarsky,S. Kanakasabapathy,L. F. Edge,(unknown),(unknown),(unknown),(unknown),P. Kulkarni,(unknown),Kangguo Cheng,A. Khakifirooz,B. Doris,H. Bu,(unknown)	4
2	Integration of Local Stress Techniques with Strained-Si Directly on Insulator (SSDOI) Substrates 2006 ·H. Yin,Zhibin Ren,H. Chen,J. Holt,(unknown),J.W. Sleight,K. Rim,Victor Chan,David Fried,(unknown),J. O. Chu,B. Greene,Stephen W. Bedell,G. Pfeiffer,(unknown),D. K. Sadana,T. Kanarsky,C.Y. Sung,M. Ieong,G. Shahidi	4
3	Investigation of CMOS devices with embedded sige source/drain on hybrid orientation substrates 2005 ·(unknown),Min Yang,J. Holt,Siddhartha Panda,Huajie Chen,(unknown),Massimo V. Fischetti,N. Rovedo,Jinghong Li,N. Klymko,(unknown),T. Kanarsky,G. Costrini,David Fried,A. Bryant,J. A. Ott,M. Ieong,(unknown)	20
4	Fabrication of Metal Gated FinFETs Through Complete Gate Silicidation With Ni 2004 ·IEEE Transactions on Electron Devices ·J. Kedzierski,M. Ieong,T. Kanarsky,(unknown),H.‐S. Philip Wong	45
5	Extension and source/drain design for high-performance finFET devices 2003 ·IEEE Transactions on Electron Devices ·J. Kedzierski,M. Ieong,E. Nowak,T. Kanarsky,Ying Zhang,R. Roy,D. Boyd,David Fried,H.‐S. Philip Wong	198
6	Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs 2003 ·K. Rim,J. O. Chu,H. Chen,K.A. Jenkins,T. Kanarsky,(unknown),A. Mocuta,Huilong Zhu,R. Roy,J. Newbury,J. A. Ott,K. Petrarca,P. M. Mooney,D. Lacey,Steven J. Koester,K. Chan,D. Boyd,M. Ieong,H.‐S. Philip Wong	100
7	Examination of hole mobility in ultra-thin body SOI MOSFETs 2003 ·Zhibin Ren,P. M. Solomon,T. Kanarsky,B. Doris,O. Dokumaci,P. Oldiges,R. Roy,E.C. Jones,M. Ieong,R.J. Miller,Wilfried Haensch,H.‐S. Philip Wong	24
8	Extreme scaling with ultra-thin Si channel MOSFETs 2003 ·B. Doris,M. Ieong,T. Kanarsky,Ying Zhang,R. Roy,O. Dokumaci,Zhibin Ren,F. Jamin,Leathen Shi,W. Natzle,(unknown),(unknown),A. Mocuta,(unknown),M. Gribelyuk,E.C. Jones,R.J. Miller,H.‐S. Philip Wong,Wilfried Haensch	136
9	Mobility enhancement in strained Si NMOSFETs with HfO/sub 2/ gate dielectrics 2003 ·K. Rim,E. P. Gusev,C. D’Emic,T. Kanarsky,H. Chen,J. O. Chu,J. A. Ott,K. Chan,D. Boyd,(unknown),(unknown),A. Mocuta,J.J. Welser,Shlomo Cohen,(unknown),H.‐S. Philip Wong	21
10	Strained Si NMOSFETs for high performance CMOS technology 2002 ·K. Rim,Steven J. Koester,M. Hargrove,J. O. Chu,P. M. Mooney,J. A. Ott,T. Kanarsky,Paul Ronsheim,M. Ieong,A. Grill,H.‐S. Philip Wong	107
11	Ultra-thin Silicon Channel Single- and Double-gate MOSFETs 2002 ·M. Ieong,J. Kedzierski,Zhibin Ren,B. Doris,T. Kanarsky,H-S Philip Wong	4
12	Experimental evaluation of carrier transport and device design for planar symmetric/asymmetric double-gate/ground-plane CMOSFETs 2002 ·M. Ieong,E.C. Jones,T. Kanarsky,(unknown),O. Dokumaci,Rahul Roy,Linqi Shi,Toshiyuki Furukawa,Yuan Taur,R.J. Miller,H.‐S. Philip Wong	33
13	An experimental study on transport issues and electrostatics of ultrathin body SOI pMOSFETs 2002 ·IEEE Electron Device Letters ·Zhibin Ren,(unknown),B. Doris,Phil Oldiges,T. Kanarsky,O. Dokumaci,R. Roy,M.S. Leong,E.C. Jones,H.‐S. Philip Wong	14
14	High performance of planar double gate MOSFETs with thin backgate dielectrics 2002 ·E.C. Jones,M. Ieong,T. Kanarsky,O. Dokumaci,R. Roy,Leathen Shi,Toshiyuki Furukawa,R.J. Miller,H.‐S. Philip Wong	6
15	Data Retention in SOI-DRAM with Trench Capacitor Cell 1998 ·European Solid-State Device Research Conference ·H.I. Hanafi,T. Kanarsky,S. Schmitz,(unknown)	2

About T. Kanarsky

T. Kanarsky is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 15 papers that have together received 718 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (15 papers), Semiconductor materials and devices (15 papers) and Silicon Carbide Semiconductor Technologies (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (704 citations), Biomedical Engineering (122 citations) and Atomic and Molecular Physics, and Optics (65 citations). T. Kanarsky has collaborated with scholars based in United States. Frequent co-authors include H.‐S. Philip Wong, M. Ieong, R. Roy, J. Kedzierski, Ying Zhang, D. Boyd, David Fried, E. Nowak, J. O. Chu and J. A. Ott. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and European Solid-State Device Research Conference.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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