T. Kanarsky

1.5k total citations
15 papers, 718 citations indexed

About

T. Kanarsky is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, T. Kanarsky has authored 15 papers receiving a total of 718 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 1 paper in Biomedical Engineering. Recurrent topics in T. Kanarsky's work include Advancements in Semiconductor Devices and Circuit Design (15 papers), Semiconductor materials and devices (15 papers) and Silicon Carbide Semiconductor Technologies (5 papers). T. Kanarsky is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (15 papers), Semiconductor materials and devices (15 papers) and Silicon Carbide Semiconductor Technologies (5 papers). T. Kanarsky collaborates with scholars based in United States. T. Kanarsky's co-authors include H.‐S. Philip Wong, M. Ieong, R. Roy, J. Kedzierski, Ying Zhang, D. Boyd, David Fried, E. Nowak, J. O. Chu and J. A. Ott and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and European Solid-State Device Research Conference.

In The Last Decade

T. Kanarsky

15 papers receiving 663 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
T. Kanarsky United States	10	704	122	65	49	5	15	718
Cáit Ní Chléirigh United States	10	515 0.7×	149 1.2×	48 0.7×	58 1.2×	4 0.8×	15	533
E. Ungersboeck Austria	12	321 0.5×	95 0.8×	84 1.3×	85 1.7×	2 0.4×	27	366
J. Newbury United States	9	530 0.8×	168 1.4×	63 1.0×	44 0.9×	3 0.6×	13	540
K. Schruefer United States	12	484 0.7×	102 0.8×	31 0.5×	24 0.5×	4 0.8×	32	488
O. Dokumaci United States	12	497 0.7×	69 0.6×	87 1.3×	59 1.2×	5 1.0×	27	505
Sung Dae Suk South Korea	13	718 1.0×	378 3.1×	53 0.8×	54 1.1×	4 0.8×	26	735
Kyoung Hwan Yeo South Korea	16	782 1.1×	396 3.2×	58 0.9×	61 1.2×	5 1.0×	32	803
Ankit Jain United States	9	571 0.8×	72 0.6×	79 1.2×	103 2.1×	3 0.6×	17	594
F. Allain France	13	549 0.8×	78 0.6×	29 0.4×	25 0.5×	2 0.4×	36	559
J.P. Colinge Belgium	14	479 0.7×	98 0.8×	84 1.3×	52 1.1×		38	498

Countries citing papers authored by T. Kanarsky

Since Specialization

Citations

This map shows the geographic impact of T. Kanarsky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Kanarsky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Kanarsky more than expected).

Fields of papers citing papers by T. Kanarsky

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Kanarsky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Kanarsky. The network helps show where T. Kanarsky may publish in the future.

Co-authorship network of co-authors of T. Kanarsky

This figure shows the co-authorship network connecting the top 25 collaborators of T. Kanarsky. A scholar is included among the top collaborators of T. Kanarsky based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Kanarsky. T. Kanarsky is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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15 of 15 papers shown

Ren, Zhibin, S. Mehta, Jian Cai, et al.. (2011). Assessment of fully-depleted planar CMOS for low power complex circuit operation. 10. 15.5.1–15.5.4. 4 indexed citations

Yin, H., Zhibin Ren, H. Chen, et al.. (2006). Integration of Local Stress Techniques with Strained-Si Directly on Insulator (SSDOI) Substrates. 76–77. 4 indexed citations

Yang, Min, J. Holt, Siddhartha Panda, et al.. (2005). Investigation of CMOS devices with embedded sige source/drain on hybrid orientation substrates. 28–29. 20 indexed citations

Kedzierski, J., et al.. (2004). Fabrication of Metal Gated FinFETs Through Complete Gate Silicidation With Ni. IEEE Transactions on Electron Devices. 51(12). 2115–2120. 45 indexed citations

Kedzierski, J., M. Ieong, E. Nowak, et al.. (2003). Extension and source/drain design for high-performance finFET devices. IEEE Transactions on Electron Devices. 50(4). 952–958. 198 indexed citations

Rim, K., J. O. Chu, H. Chen, et al.. (2003). Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs. 98–99. 100 indexed citations

Ren, Zhibin, P. M. Solomon, T. Kanarsky, et al.. (2003). Examination of hole mobility in ultra-thin body SOI MOSFETs. 51–54. 24 indexed citations

Doris, B., M. Ieong, T. Kanarsky, et al.. (2003). Extreme scaling with ultra-thin Si channel MOSFETs. 267–270. 136 indexed citations

Rim, K., E. P. Gusev, C. D’Emic, et al.. (2003). Mobility enhancement in strained Si NMOSFETs with HfO/sub 2/ gate dielectrics. 12–13. 21 indexed citations

10.

Rim, K., Steven J. Koester, M. Hargrove, et al.. (2002). Strained Si NMOSFETs for high performance CMOS technology. 59–60. 107 indexed citations

11.

Ieong, M., J. Kedzierski, Zhibin Ren, et al.. (2002). Ultra-thin Silicon Channel Single- and Double-gate MOSFETs. 4 indexed citations

12.

Ieong, M., E.C. Jones, T. Kanarsky, et al.. (2002). Experimental evaluation of carrier transport and device design for planar symmetric/asymmetric double-gate/ground-plane CMOSFETs. 19.6.1–19.6.4. 33 indexed citations

13.

Ren, Zhibin, B. Doris, Phil Oldiges, et al.. (2002). An experimental study on transport issues and electrostatics of ultrathin body SOI pMOSFETs. IEEE Electron Device Letters. 23(10). 609–611. 14 indexed citations

14.

Jones, E.C., M. Ieong, T. Kanarsky, et al.. (2002). High performance of planar double gate MOSFETs with thin backgate dielectrics. 28–29. 6 indexed citations

15.

Hanafi, H.I., et al.. (1998). Data Retention in SOI-DRAM with Trench Capacitor Cell. European Solid-State Device Research Conference. 276–279. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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