H. Chen

793 total citations
13 papers, 357 citations indexed

About

H. Chen is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Nuclear and High Energy Physics. According to data from OpenAlex, H. Chen has authored 13 papers receiving a total of 357 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Electrical and Electronic Engineering, 3 papers in Atomic and Molecular Physics, and Optics and 2 papers in Nuclear and High Energy Physics. Recurrent topics in H. Chen's work include Semiconductor materials and devices (8 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). H. Chen is often cited by papers focused on Semiconductor materials and devices (8 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). H. Chen collaborates with scholars based in United States. H. Chen's co-authors include J. O. Chu, A. Vaccarino, James Sexton, D. Weingarten, F. Butler, P. M. Mooney, Keith Fogel, J. A. Ott, Stephen W. Bedell and D. K. Sadana and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

H. Chen

13 papers receiving 338 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Chen United States 9 283 62 58 56 19 13 357
John A. Modolo United States 5 324 1.1× 59 1.0× 20 0.3× 20 0.4× 22 1.2× 9 331
J. Vétéran France 7 105 0.4× 36 0.6× 23 0.4× 51 0.9× 9 0.5× 21 131
D. Kayran United States 7 166 0.6× 41 0.7× 57 1.0× 61 1.1× 5 0.3× 53 188
Keihan Tavakoli France 5 55 0.2× 27 0.4× 33 0.6× 32 0.6× 7 0.4× 19 108
J.L. Pelloie France 14 771 2.7× 12 0.2× 33 0.6× 31 0.6× 27 1.4× 72 780
Th. Schmid Germany 6 78 0.3× 30 0.5× 16 0.3× 57 1.0× 11 0.6× 12 94
Takashi Ohshima Japan 7 93 0.3× 15 0.2× 34 0.6× 44 0.8× 21 1.1× 22 123
V. Veshcherevich United States 8 194 0.7× 34 0.5× 108 1.9× 93 1.7× 4 0.2× 68 236
K. Hirose Japan 12 380 1.3× 44 0.7× 17 0.3× 46 0.8× 6 0.3× 105 522
Javier Resta-López United Kingdom 6 64 0.2× 33 0.5× 32 0.6× 25 0.4× 11 0.6× 38 97

Countries citing papers authored by H. Chen

Since Specialization
Citations

This map shows the geographic impact of H. Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Chen more than expected).

Fields of papers citing papers by H. Chen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Chen. The network helps show where H. Chen may publish in the future.

Co-authorship network of co-authors of H. Chen

This figure shows the co-authorship network connecting the top 25 collaborators of H. Chen. A scholar is included among the top collaborators of H. Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Chen. H. Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

13 of 13 papers shown
1.
Yin, H., Zhibin Ren, H. Chen, et al.. (2006). Integration of Local Stress Techniques with Strained-Si Directly on Insulator (SSDOI) Substrates. 76–77. 4 indexed citations
2.
Mooney, P. M., K. Rim, Silke Christiansen, et al.. (2005). N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers. Solid-State Electronics. 49(10). 1669–1673. 7 indexed citations
3.
Cai, Jiahui, P. M. Mooney, Silke Christiansen, et al.. (2004). Strain relaxation and threading dislocation density in helium-implanted and annealed Si1−xGex/Si(100) heterostructures. Journal of Applied Physics. 95(10). 5347–5351. 34 indexed citations
4.
Bedell, Stephen W., H. Chen, D. K. Sadana, Keith Fogel, & A. Domenicucci. (2004). A Survey of Defects in Strained Si Layers. MRS Proceedings. 809. 8 indexed citations
5.
Bedell, Stephen W., Keith Fogel, D. K. Sadana, & H. Chen. (2004). Defects and strain relaxation in silicon-germanium-on-insulator formed by high-temperature oxidation. Applied Physics Letters. 85(24). 5869–5871. 26 indexed citations
6.
Bedell, Stephen W., Keith Fogel, D. K. Sadana, H. Chen, & A. Domenicucci. (2004). Observation of stacking faults in strained Si layers. Applied Physics Letters. 85(13). 2493–2495. 20 indexed citations
7.
Mooney, P. M., G. M. Cohen, H. Chen, J. O. Chu, & N. Klymko. (2004). Strained Si-on-Insulator Fabricated from Elastically-Relaxed Si/SiGe Structures. MRS Proceedings. 809. 4 indexed citations
8.
Rim, K., J. O. Chu, H. Chen, et al.. (2003). Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs. 98–99. 100 indexed citations
9.
Ahlgren, D., B. Jagannathan, S.J. Jeng, et al.. (2003). Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance. 80–83. 9 indexed citations
10.
Rim, K., E. P. Gusev, C. D’Emic, et al.. (2003). Mobility enhancement in strained Si NMOSFETs with HfO/sub 2/ gate dielectrics. 12–13. 21 indexed citations
11.
Jeng, S.J., B. Jagannathan, Jae-Sung Rieh, et al.. (2001). A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure. IEEE Electron Device Letters. 22(11). 542–544. 60 indexed citations
12.
Butler, F., H. Chen, James Sexton, A. Vaccarino, & D. Weingarten. (1993). Infinite volume, continuum limit of valence approximation hadron masses. Nuclear Physics B - Proceedings Supplements. 30. 377–380. 3 indexed citations
13.
Butler, F., H. Chen, James Sexton, A. Vaccarino, & D. Weingarten. (1993). Hadron mass predictions of the valence approximation to lattice QCD. Physical Review Letters. 70(19). 2849–2852. 61 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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