O. Dokumaci

926 total citations
27 papers, 505 citations indexed

About

O. Dokumaci is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, O. Dokumaci has authored 27 papers receiving a total of 505 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 7 papers in Atomic and Molecular Physics, and Optics and 3 papers in Computational Mechanics. Recurrent topics in O. Dokumaci's work include Semiconductor materials and devices (24 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Silicon and Solar Cell Technologies (13 papers). O. Dokumaci is often cited by papers focused on Semiconductor materials and devices (24 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Silicon and Solar Cell Technologies (13 papers). O. Dokumaci collaborates with scholars based in United States and Canada. O. Dokumaci's co-authors include Wilfried Haensch, P. M. Solomon, H.‐S. Philip Wong, Mark E. Law, P. Ronsheim, M. Ieong, E.C. Jones, D.J. Frank, J. Jopling and T. Kanarsky and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

O. Dokumaci

27 papers receiving 473 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
O. Dokumaci United States	12	497	87	69	59	21	27	505
A.C. Megdanis United States	11	304 0.6×	79 0.9×	52 0.8×	41 0.7×	6 0.3×	20	320
R. Palla France	8	234 0.5×	39 0.4×	58 0.8×	22 0.4×	5 0.2×	15	240
S. Inaba Japan	14	512 1.0×	56 0.6×	57 0.8×	34 0.6×	9 0.4×	54	533
C. Ortolland Belgium	11	380 0.8×	61 0.7×	55 0.8×	21 0.4×	9 0.4×	37	392
C. Kerner Belgium	11	347 0.7×	63 0.7×	40 0.6×	26 0.4×	8 0.4×	33	360
G. Höck Germany	12	377 0.8×	154 1.8×	71 1.0×	40 0.7×	10 0.5×	23	400
C. Hu United States	10	271 0.5×	36 0.4×	46 0.7×	34 0.6×	7 0.3×	16	305
J.M. Sung United States	8	308 0.6×	42 0.5×	31 0.4×	47 0.8×	5 0.2×	21	308
C.L. Shieh United States	12	328 0.7×	163 1.9×	32 0.5×	18 0.3×	11 0.5×	31	344
Hitoshi Sumida Japan	12	297 0.6×	45 0.5×	19 0.3×	31 0.5×	23 1.1×	46	313

Countries citing papers authored by O. Dokumaci

Since Specialization

Citations

This map shows the geographic impact of O. Dokumaci's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by O. Dokumaci with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites O. Dokumaci more than expected).

Fields of papers citing papers by O. Dokumaci

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by O. Dokumaci. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by O. Dokumaci. The network helps show where O. Dokumaci may publish in the future.

Co-authorship network of co-authors of O. Dokumaci

This figure shows the co-authorship network connecting the top 25 collaborators of O. Dokumaci. A scholar is included among the top collaborators of O. Dokumaci based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with O. Dokumaci. O. Dokumaci is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Sleight, J.W., J. M. Hergenrother, K.A. Jenkins, et al.. (2006). Stress memorization in high-performance FDSOI devices with ultra-thin silicon channels and 25nm gate lengths. 505–508. 11 indexed citations

Sleight, J.W., Isaac Lauer, O. Dokumaci, et al.. (2006). Challenges and Opportunities for High Performance 32 nm CMOS Technology. 1–4. 36 indexed citations

Ren, Zhibin, M. Ieong, Jian Cai, et al.. (2006). Selective epitaxial channel ground plane thin SOI CMOS devices. 42. 733–736. 5 indexed citations

Solomon, P. M., D.J. Frank, J. Jopling, et al.. (2004). Tunnel current measurements on P/N junction diodes and implications for future device design. ed 30. 9.3.1–9.3.4. 7 indexed citations

Solomon, P. M., J. Jopling, D.J. Frank, et al.. (2004). Universal tunneling behavior in technologically relevant P/N junction diodes. Journal of Applied Physics. 95(10). 5800–5812. 90 indexed citations

Ren, Zhibin, P. M. Solomon, T. Kanarsky, et al.. (2003). Examination of hole mobility in ultra-thin body SOI MOSFETs. 51–54. 24 indexed citations

Zhu, Huilong, et al.. (2003). Modeling of the diffusion of implanted boron in strained Si/Si/sub 1-x/Ge/sub x/. 72. 221–224. 1 indexed citations

Law, Mark E., et al.. (2002). Physical integrated diffusion-oxidation model for implanted nitrogen in silicon. Journal of Applied Physics. 91(4). 1894–1900. 12 indexed citations

Murthy, Ch. S. N., R. Rengarajan, O. Dokumaci, et al.. (2002). Nitrogen-induced transient enhanced diffusion of dopants. Applied Physics Letters. 80(15). 2696–2698. 7 indexed citations

10.

Ren, Zhibin, B. Doris, Phil Oldiges, et al.. (2002). An experimental study on transport issues and electrostatics of ultrathin body SOI pMOSFETs. IEEE Electron Device Letters. 23(10). 609–611. 14 indexed citations

11.

Law, Mark E., et al.. (2002). Comprehensive model for nitrogen diffusion in silicon. 78. 38.5.1–38.5.4. 3 indexed citations

12.

Jones, E.C., M. Ieong, T. Kanarsky, et al.. (2002). High performance of planar double gate MOSFETs with thin backgate dielectrics. 28–29. 6 indexed citations

13.

Ieong, M., E.C. Jones, T. Kanarsky, et al.. (2002). Experimental evaluation of carrier transport and device design for planar symmetric/asymmetric double-gate/ground-plane CMOSFETs. 19.6.1–19.6.4. 33 indexed citations

14.

Law, Mark E., et al.. (2001). Diffusion of Implanted Nitrogen in Silicon at High Doses. MRS Proceedings. 669. 2 indexed citations

15.

Dokumaci, O., Richard D. Kaplan, Mukesh Khare, et al.. (2001). Diffusion and Defect Structure in Nitrogen Implanted Silicon. MRS Proceedings. 669. 4 indexed citations

16.

Law, Mark E., et al.. (2001). Experimental identification of nitrogen-vacancy complexes in nitrogen implanted silicon. Applied Physics Letters. 79(5). 623–625. 15 indexed citations

17.

Dokumaci, O., et al.. (2000). Effect of Nitrogen Implants on Boron Transient Enhanced Diffusion. MRS Proceedings. 610. 5 indexed citations

18.

Law, Mark E., et al.. (2000). Diffusion of implanted nitrogen in silicon. Journal of Applied Physics. 87(5). 2282–2284. 32 indexed citations

19.

Dokumaci, O., Paul Ronsheim, C. D’Emic, et al.. (1999). Transient Enhanced Diffusion and Dose Loss of Indium in Silicon. MRS Proceedings. 568. 15 indexed citations

20.

Dokumaci, O., P. M. Rousseau, S. Luning, et al.. (1995). Transmission electron microscopy analysis of heavily As-doped, laser, and thermally annealed layers in silicon. Journal of Applied Physics. 78(2). 828–831. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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