F. Prégaldiny

1.1k total citations
20 papers, 765 citations indexed

About

F. Prégaldiny is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, F. Prégaldiny has authored 20 papers receiving a total of 765 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 2 papers in Atomic and Molecular Physics, and Optics and 2 papers in Biomedical Engineering. Recurrent topics in F. Prégaldiny's work include Advancements in Semiconductor Devices and Circuit Design (20 papers), Semiconductor materials and devices (17 papers) and Silicon Carbide Semiconductor Technologies (13 papers). F. Prégaldiny is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (20 papers), Semiconductor materials and devices (17 papers) and Silicon Carbide Semiconductor Technologies (13 papers). F. Prégaldiny collaborates with scholars based in France, Switzerland and Armenia. F. Prégaldiny's co-authors include Christophe Lallement, Jean-Michel Sallese, Nicolas Chevillon, D. Mathiot, Christian Enz, Ian O’Connor, Lorena Anghel, R. Leveugle, Cristell Maneux and Sébastien Frégonèse and has published in prestigious journals such as IEEE Transactions on Electron Devices, Solid-State Electronics and IEEE Transactions on Circuits and Systems I Regular Papers.

In The Last Decade

F. Prégaldiny

19 papers receiving 718 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Prégaldiny France 13 748 156 67 28 15 20 765
Narain Arora Germany 8 566 0.8× 82 0.5× 39 0.6× 41 1.5× 7 0.5× 15 579
A. Bryant United States 6 511 0.7× 122 0.8× 77 1.1× 57 2.0× 7 0.5× 8 562
Edward J. Nowak United States 7 372 0.5× 76 0.5× 69 1.0× 35 1.3× 15 1.0× 14 406
Kyoung Hwan Yeo South Korea 16 782 1.0× 396 2.5× 61 0.9× 58 2.1× 5 0.3× 32 803
Costin Anghel France 11 609 0.8× 117 0.8× 21 0.3× 21 0.8× 7 0.5× 25 627
J. Johnson United States 6 465 0.6× 80 0.5× 83 1.2× 72 2.6× 6 0.4× 17 510
Byung-Il Ryu South Korea 10 574 0.8× 253 1.6× 44 0.7× 36 1.3× 5 0.3× 36 585
E. Landgraf Germany 12 313 0.4× 72 0.5× 42 0.6× 27 1.0× 4 0.3× 28 335
Anubha Goel India 10 407 0.5× 171 1.1× 35 0.5× 24 0.9× 3 0.2× 28 448
Ankit Jain United States 9 571 0.8× 72 0.5× 103 1.5× 79 2.8× 3 0.2× 17 594

Countries citing papers authored by F. Prégaldiny

Since Specialization
Citations

This map shows the geographic impact of F. Prégaldiny's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Prégaldiny with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Prégaldiny more than expected).

Fields of papers citing papers by F. Prégaldiny

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Prégaldiny. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Prégaldiny. The network helps show where F. Prégaldiny may publish in the future.

Co-authorship network of co-authors of F. Prégaldiny

This figure shows the co-authorship network connecting the top 25 collaborators of F. Prégaldiny. A scholar is included among the top collaborators of F. Prégaldiny based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Prégaldiny. F. Prégaldiny is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Prégaldiny, F., et al.. (2017). Surface Trap-Induced Conductivity Type Switching in Semiconductor Nanowires: Analytical and Numerical Analyses. IEEE Transactions on Electron Devices. 64(12). 5249–5255. 5 indexed citations
2.
Petrosyan, S., et al.. (2016). Conductivity type switching in semiconductor nanowires. SPIRE - Sciences Po Institutional REpository. 9440. 210–213. 1 indexed citations
3.
Prégaldiny, F., et al.. (2013). Explicit drain current model of junctionless double-gate field-effect transistors. Solid-State Electronics. 89. 134–138. 14 indexed citations
4.
Sallese, Jean-Michel, et al.. (2011). Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors. IEEE Transactions on Electron Devices. 58(8). 2628–2637. 199 indexed citations
5.
Chevillon, Nicolas, et al.. (2011). Generalization of the Concept of Equivalent Thickness and Capacitance to Multigate MOSFETs Modeling. IEEE Transactions on Electron Devices. 59(1). 60–71. 28 indexed citations
6.
Prégaldiny, F., et al.. (2011). Physics-based compact model for ultra-scaled FinFETs. Solid-State Electronics. 62(1). 165–173. 30 indexed citations
7.
Sallese, Jean-Michel, et al.. (2010). The Equivalent-Thickness Concept for Doped Symmetric DG MOSFETs. IEEE Transactions on Electron Devices. 57(11). 2917–2924. 20 indexed citations
8.
Tang, Ming‐Chun, F. Prégaldiny, Christophe Lallement, & Jean-Michel Sallese. (2009). Explicit Compact Model for Ultranarrow Body FinFETs. IEEE Transactions on Electron Devices. 56(7). 1543–1547. 18 indexed citations
9.
O’Connor, Ian, F. Gaffiot, F. Prégaldiny, et al.. (2007). CNTFET Modeling and Reconfigurable Logic-Circuit Design. IEEE Transactions on Circuits and Systems I Regular Papers. 54(11). 2365–2379. 128 indexed citations
10.
Prégaldiny, F., et al.. (2007). Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects. Solid-State Electronics. 52(1). 99–106. 40 indexed citations
11.
Prégaldiny, F., et al.. (2006). An explicit quasi-static charge-based compact model for symmetric DG MOSFET. HAL (Le Centre pour la Communication Scientifique Directe). 3(2006). 686–691. 6 indexed citations
12.
Prégaldiny, F., Jean-Baptiste Kammerer, & Christophe Lallement. (2006). Compact Modeling and Applications of CNTFETs for Analog and Digital Circuit Design. HAL (Le Centre pour la Communication Scientifique Directe). 1030–1033.
13.
Prégaldiny, F., et al.. (2006). Explicit modelling of the double-gate MOSFET with VHDL-AMS. International Journal of Numerical Modelling Electronic Networks Devices and Fields. 19(3). 239–256. 10 indexed citations
14.
Prégaldiny, F., Christophe Lallement, & Jean-Baptiste Kammerer. (2006). Design-oriented compact models for CNTFETs. 34–39. 24 indexed citations
15.
Sallese, Jean-Michel, et al.. (2004). A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism. Solid-State Electronics. 49(3). 485–489. 116 indexed citations
16.
Prégaldiny, F., Christophe Lallement, & D. Mathiot. (2004). Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model. Solid-State Electronics. 48(5). 781–787. 38 indexed citations
17.
Prégaldiny, F. & Christophe Lallement. (2004). Fourth generation MOSFET model and its VHDL‐AMS implementation. International Journal of Numerical Modelling Electronic Networks Devices and Fields. 18(1). 39–48. 1 indexed citations
18.
Prégaldiny, F., Christophe Lallement, R. van Langevelde, & D. Mathiot. (2003). An advanced explicit surface potential model physically accounting for the quantization effects in deep-submicron MOSFETs. Solid-State Electronics. 48(3). 427–435. 38 indexed citations
19.
Prégaldiny, F., Christophe Lallement, & D. Mathiot. (2003). Quantum surface potential model suitable for advanced MOSFETs simulation. 227–230. 3 indexed citations
20.
Prégaldiny, F., Christophe Lallement, & D. Mathiot. (2002). A simple efficient model of parasitic capacitances of deep-submicron LDD MOSFETs. Solid-State Electronics. 46(12). 2191–2198. 46 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Narain Arora Breakdown of academic impact, for papers by A. Bryant Breakdown of academic impact, for papers by Edward J. Nowak Breakdown of academic impact, for papers by Kyoung Hwan Yeo Breakdown of academic impact, for papers by Costin Anghel Breakdown of academic impact, for papers by J. Johnson Breakdown of academic impact, for papers by Byung-Il Ryu Breakdown of academic impact, for papers by E. Landgraf Breakdown of academic impact, for papers by Anubha Goel Breakdown of academic impact, for papers by Ankit Jain
Rankless by CCL
2026