E.C. Jones

1.4k total citations
38 papers, 953 citations indexed

About

E.C. Jones is a scholar working on Electrical and Electronic Engineering, Mechanics of Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, E.C. Jones has authored 38 papers receiving a total of 953 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 7 papers in Mechanics of Materials and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in E.C. Jones's work include Semiconductor materials and devices (25 papers), Silicon and Solar Cell Technologies (19 papers) and Integrated Circuits and Semiconductor Failure Analysis (15 papers). E.C. Jones is often cited by papers focused on Semiconductor materials and devices (25 papers), Silicon and Solar Cell Technologies (19 papers) and Integrated Circuits and Semiconductor Failure Analysis (15 papers). E.C. Jones collaborates with scholars based in United States, Japan and United Kingdom. E.C. Jones's co-authors include N.W. Cheung, E. Ishida, H.‐S. Philip Wong, Huiling Shang, P. Kozlowski, S.E. Steen, J. A. Ott, M. Ieong, Wilfried Haensch and K. Chan and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Materials Science and Engineering A.

In The Last Decade

E.C. Jones

36 papers receiving 895 citations

Peers

E.C. Jones

EEE

MC

AMPO

BE

CM

Tatsuo Oomori Japan

G. Glass United States

S. Yamazaki Japan

W.B. de Boer Netherlands

T. Kociniewski France

C. J. Gibbings United Kingdom

S.J. Jeng United States

S. Yu. Shiryaev Denmark

V. V. Emtsev Russia

C. J. Miner Canada

Tatsuo Oomori Japan

E.C. Jones

722 ×0.8

EEE

153 ×0.8

MC

114 ×0.6

AMPO

67 ×0.4

BE

61 ×0.4

CM

Citations per year, relative to E.C. Jones E.C. Jones (= 1×) peers Tatsuo Oomori

Countries citing papers authored by E.C. Jones

Since Specialization

Citations

This map shows the geographic impact of E.C. Jones's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E.C. Jones with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E.C. Jones more than expected).

Fields of papers citing papers by E.C. Jones

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E.C. Jones. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E.C. Jones. The network helps show where E.C. Jones may publish in the future.

Co-authorship network of co-authors of E.C. Jones

This figure shows the co-authorship network connecting the top 25 collaborators of E.C. Jones. A scholar is included among the top collaborators of E.C. Jones based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E.C. Jones. E.C. Jones is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

1.

Jones, E.C., et al.. (2022). 869 Understanding medical students’ perceived barriers to examining paediatric patients. A391.2–A392.

2.

Jones, K. S., et al.. (2004). Secondary defect formation in bonded silicon-on-insulator after boron implantation. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(1). 459–462. 7 indexed citations

3.

Wong, H.‐S. Philip, B. Doris, Evgeni Gusev, et al.. (2004). Recent progress in devices and materials for CMOS technology. 89. 13–16.

4.

Shang, Huiling, J. A. Ott, P. Kozlowski, et al.. (2003). Electrical characterization of germanium p-channel MOSFETs. IEEE Electron Device Letters. 24(4). 242–244. 135 indexed citations

5.

Ren, Zhibin, P. M. Solomon, T. Kanarsky, et al.. (2003). Examination of hole mobility in ultra-thin body SOI MOSFETs. 51–54. 24 indexed citations

6.

Jones, E.C., P. Ronsheim, C. Cabral, et al.. (2003). Dopant redistribution in SOI during RTA: a study on doping in scaled-down Si layers. 97 23. 337–340. 2 indexed citations

7.

Chu, Jianxin, J. A. Ott, Hong Zhu, et al.. (2002). Sub-30 nm P+ abrupt junction formation in strained Si/Si1-xGex MOS device. 379–382. 2 indexed citations

8.

Jones, E.C.. (2002). Doping challenges in exploratory devices for high performance logic. 85. 1–6. 1 indexed citations

9.

Cohen, G. M., et al.. (2002). High-resolution x-ray diffraction for characterization and monitoring of silicon-on-insulator fabrication processes. Journal of Applied Physics. 93(1). 245–250. 9 indexed citations

10.

Jones, K. S., et al.. (2002). Silicon Self-Interstitial Cluster Formation and Dissolution in SOI. MRS Proceedings. 717. 3 indexed citations

11.

Ieong, M., E.C. Jones, T. Kanarsky, et al.. (2002). Experimental evaluation of carrier transport and device design for planar symmetric/asymmetric double-gate/ground-plane CMOSFETs. 19.6.1–19.6.4. 33 indexed citations

12.

Cohen, G. M., P. M. Mooney, E.C. Jones, et al.. (1999). Characterization of the silicon on insulator film in bonded wafers by high resolution x-ray diffraction. Applied Physics Letters. 75(6). 787–789. 27 indexed citations

13.

Tiwari, Sandip, P. M. Solomon, J.J. Welser, et al.. (1999). CMOS and memories: From 100 nm to 10 nm!. Microelectronic Engineering. 46(1-4). 3–6. 4 indexed citations

14.

Yang, B. L., et al.. (1998). n+/p ultra-shallow junction formation with plasma immersion ion implantation. Microelectronics Reliability. 38(9). 1489–1494. 12 indexed citations

15.

Yamada, Isao, Jiro Matsuo, Noriaki Toyoda, et al.. (1998). Non-linear processes in the gas cluster ion beam modification of solid surfaces. Materials Science and Engineering A. 253(1-2). 249–257. 56 indexed citations

16.

Jones, E.C. & N.W. Cheung. (1997). Plasma doping dosimetry. IEEE Transactions on Plasma Science. 25(1). 42–52. 6 indexed citations

17.

Jones, E.C., et al.. (1997). Shallow junction formation by plasma immersion ion implantation. Surface and Coatings Technology. 93(2-3). 254–257. 23 indexed citations

18.

Jones, E.C. & N.W. Cheung. (1996). Modeling of leakage mechanisms in sub-50 nm p+-n junctions. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(1). 236–241. 13 indexed citations

19.

Yamada, Isao, Jiro Matsuo, E.C. Jones, et al.. (1996). Range and Damage Distribution in Cluster Ion Implantation. MRS Proceedings. 438. 12 indexed citations

20.

Jones, E.C., N.W. Cheung, & David B. Fraser. (1995). Low-temperature processing of shallow junctions using epitaxial and polycrystalline CoSi2. Journal of Electronic Materials. 24(7). 863–873. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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