E. P. Gusev

6.0k total citations · 1 hit paper
84 papers, 4.6k citations indexed

About

E. P. Gusev is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, E. P. Gusev has authored 84 papers receiving a total of 4.6k indexed citations (citations by other indexed papers that have themselves been cited), including 78 papers in Electrical and Electronic Engineering, 23 papers in Materials Chemistry and 14 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in E. P. Gusev's work include Semiconductor materials and devices (75 papers), Advancements in Semiconductor Devices and Circuit Design (37 papers) and Integrated Circuits and Semiconductor Failure Analysis (31 papers). E. P. Gusev is often cited by papers focused on Semiconductor materials and devices (75 papers), Advancements in Semiconductor Devices and Circuit Design (37 papers) and Integrated Circuits and Semiconductor Failure Analysis (31 papers). E. P. Gusev collaborates with scholars based in United States, Russia and Canada. E. P. Gusev's co-authors include Eric Garfunkel, M. Copel, T. Gustafsson, M. Gribelyuk, Hongcheng Lu, R. Degraeve, E. Cartier, C. D’Emic, Martin M. Frank and Vijay Narayanan and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

E. P. Gusev

82 papers receiving 4.4k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

2001 636 citations E. P. Gusev, Eric Garfunkel et al. Journal of Applied Physics profile →

Peers

Countries citing papers authored by E. P. Gusev

Since Specialization

Citations

This map shows the geographic impact of E. P. Gusev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. P. Gusev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. P. Gusev more than expected).

Fields of papers citing papers by E. P. Gusev

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. P. Gusev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. P. Gusev. The network helps show where E. P. Gusev may publish in the future.

Co-authorship network of co-authors of E. P. Gusev

This figure shows the co-authorship network connecting the top 25 collaborators of E. P. Gusev. A scholar is included among the top collaborators of E. P. Gusev based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. P. Gusev. E. P. Gusev is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 2016 ·TNO Repository ·F. Roozeboom, Vijay Narayanan, Kuniyuki Kakushima, P. J. Timans, E. P. Gusev, (unknown), Stefan De Gendt	3
2	Effects of Contacting Surfaces on MEMS Device Reliability 2010 ·Journal of Adhesion Science and Technology ·Yongkun Du, (unknown), Lior Kogut, Yeh‐Jiun Tung, E. P. Gusev	4
3	Review of Device and Reliability Physics of Dielectrics in Electrostatically Driven MEMS Devices 2009 ·IEEE Transactions on Device and Materials Reliability ·(unknown), James R. Webster, (unknown), E. P. Gusev	56
4	Device physics of capacitive MEMS 2007 ·Microelectronic Engineering ·(unknown), (unknown), (unknown), Yeh‐Jiun Tung, James R. Webster, (unknown), E. P. Gusev	20
5	Germanium channel MOSFETs: Opportunities and challenges 2006 ·IBM Journal of Research and Development ·Huiling Shang, Martin M. Frank, E. P. Gusev, J. O. Chu, Stephen W. Bedell, K.W. Guarini, M. Ieong	146
6	The role of Si orientation and temperature on the carrier mobility in metal oxide semiconductor field-effect transistors with ultrathin HfO2 gate dielectrics 2006 ·Journal of Applied Physics ·B. Mereu, C. Rossel, E. P. Gusev, Min Yang	40
7	Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium 2005 ·Electrochemical Society eBooks ·E. P. Gusev	1
8	Interface trapping properties of nMOSFETs with Al2O3/SiOxNy/Si(100) gate dielectric stacks after exposure to ionizing radiation 2004 ·Microelectronic Engineering ·J. Félix, Hao Xiong, Daniel M. Fleetwood, E. P. Gusev, Ronald D. Schrimpf, Andrew L. Sternberg, C. D’Emic	12
9	Charge trapping and detrapping in HfO2 high-κ gate stacks 2004 ·Microelectronic Engineering ·E. P. Gusev, C. D’Emic, Sufi Zafar, Atul Kumar	30
10	Microstructure and thermal stability of HfO2 gate dielectric deposited on Ge(100) 2004 ·Applied Physics Letters ·E. P. Gusev, Huiling Shang, M. Copel, M. Gribelyuk, C. D’Emic, P. Kozlowski, T. Zabel	79
11	Physical and electrical properties of reactive molecular-beam-deposited aluminum nitride in metal-oxide-silicon structures 2003 ·Journal of Applied Physics ·L.-Å. Ragnarsson, N. A. Bojarczuk, M. Copel, E. P. Gusev, J. Karasiński, Supratik Guha	18
12	Low-frequency noise and radiation response of metal-oxide-semiconductor transistors with Al2O3/SiOxNy/Si(100) gate stacks 2003 ·Applied Physics Letters ·Hao Xiong, Daniel M. Fleetwood, J. Félix, E. P. Gusev, C. D’Emic	16
13	Interface reactions in ZrO2 based gate dielectric stacks 2002 ·Journal of Applied Physics ·M. Gribelyuk, Agnese Callegari, E. P. Gusev, M. Copel, D. A. Buchanan	33
14	High-resolution depth profiling in ultrathin Al/sub 2/O/sub 3/ films on Si 2000 ·Lume (Universidade Federal do Rio Grande do Sul) ·E. P. Gusev, M. Copel, E. Cartier, I. J. R. Baumvol, C. Krug, (unknown)	38
15	Vacancy mechanism of the anomalous behavior of surface atoms at elevated temperatures 1999 ·Journal of Experimental and Theoretical Physics ·(unknown), С. В. Рогожкин, V. I. Troyan, E. P. Gusev, T. Gustafsson	2
16	Growth and characterization of ultrathin nitrided silicon oxide films 1999 ·IBM Journal of Research and Development ·E. P. Gusev, Hongcheng Lu, Eric Garfunkel, T. Gustafsson, (unknown)	150
17	Silicon Oxidation and Oxynitridation in the Ultrathin Regime: Ion Scattering Studies 1997 ·Brazilian Journal of Physics ·E. P. Gusev, Hongcheng Lu, T. Gustafsson, Eric Garfunkel	3
18	STRUCTURAL STUDIES OF OXIDE SURFACES 1996 ·Surface Review and Letters ·T. Gustafsson, Eric Garfunkel, E. P. Gusev, Patricio Häberle, Hongcheng Lu, (unknown)	4
19	An ion scattering study of the interaction of oxygen with Si(111): surface roughening and oxide growth 1996 ·Surface Science ·Hongcheng Lu, E. P. Gusev, Eric Garfunkel, T. Gustafsson	21
20	On a mechanism of surface oxide formation near the nucleation threshold 1994 ·Surface Science ·V. D. Borman, E. P. Gusev, (unknown), V. N. Tronin, V. I. Troyan	5

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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