H. Yin

436 total citations
25 papers, 290 citations indexed

About

H. Yin is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, H. Yin has authored 25 papers receiving a total of 290 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 11 papers in Biomedical Engineering and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in H. Yin's work include Thin-Film Transistor Technologies (11 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Silicon and Solar Cell Technologies (7 papers). H. Yin is often cited by papers focused on Thin-Film Transistor Technologies (11 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Silicon and Solar Cell Technologies (7 papers). H. Yin collaborates with scholars based in United States, China and Canada. H. Yin's co-authors include James C. Sturm, Karl D. Hobart, Fritz J. Kub, Zhigang Suo, Rui Huang, T. S. Duffy, D. K. Sadana, S. R. Shieh, Keith Fogel and J. A. Ott and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

H. Yin

23 papers receiving 273 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Yin United States 11 197 99 68 48 46 25 290
Ji’an Duan China 11 176 0.9× 104 1.1× 105 1.5× 47 1.0× 42 0.9× 24 291
Qingfeng Li China 11 193 1.0× 137 1.4× 68 1.0× 45 0.9× 57 1.2× 32 397
S. Orain France 10 247 1.3× 55 0.6× 55 0.8× 75 1.6× 12 0.3× 24 352
Elisha Rejovitzky Israel 6 218 1.1× 22 0.2× 61 0.9× 84 1.8× 32 0.7× 8 341
Guanghui Fu United States 9 68 0.3× 259 2.6× 207 3.0× 111 2.3× 66 1.4× 21 355
Jaime Gilberto Duduch Brazil 13 124 0.6× 292 2.9× 235 3.5× 169 3.5× 64 1.4× 27 403
Gjermund Kittilsland Norway 10 210 1.1× 116 1.2× 48 0.7× 26 0.5× 44 1.0× 20 275
Myung Lae Lee South Korea 8 325 1.6× 79 0.8× 18 0.3× 137 2.9× 64 1.4× 12 373

Countries citing papers authored by H. Yin

Since Specialization
Citations

This map shows the geographic impact of H. Yin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Yin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Yin more than expected).

Fields of papers citing papers by H. Yin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Yin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Yin. The network helps show where H. Yin may publish in the future.

Co-authorship network of co-authors of H. Yin

This figure shows the co-authorship network connecting the top 25 collaborators of H. Yin. A scholar is included among the top collaborators of H. Yin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Yin. H. Yin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Liang, Jie, et al.. (2025). Combinatorial screening of nanomedicines in patient-derived cancer organoids facilitates efficient cancer therapy. Nano Today. 61. 102665–102665. 3 indexed citations
3.
Gao, Wenbin, Xuan Lin, H. Yin, et al.. (2024). Modeling and signal integrity analysis of silicon interposer channels based on MTL and KBNN. Microelectronics Journal. 147. 106186–106186. 1 indexed citations
4.
Li, Bo, Bo Li, Yunbo Huang, et al.. (2018). Process variation dependence of total ionizing dose effects in bulk nFinFETs. Microelectronics Reliability. 88-90. 946–951. 8 indexed citations
5.
Saenger, K. L., Keith Fogel, J. A. Ott, et al.. (2007). Mask-edge defects in hybrid orientation direct-Si-bonded substrates recrystallized by solid phase epitaxy after patterned amorphization. Journal of Applied Physics. 101(8). 4 indexed citations
6.
Saenger, K. L., J. P. de Souza, Keith Fogel, et al.. (2007). A study of trench-edge defect formation in (001) and (011) silicon recrystallized by solid phase epitaxy. Journal of Applied Physics. 101(2). 22 indexed citations
7.
Yang, Bin, Min Yang, David Fried, et al.. (2007). CMOS Fabricated by Hybrid-Orientation Technology (HOT). 8–13. 1 indexed citations
8.
Saenger, K. L., Keith Fogel, J. A. Ott, D. K. Sadana, & H. Yin. (2007). An examination of facet formation during solid phase epitaxy of line-shaped amorphized regions in (001) and (011) Si. Journal of Applied Physics. 101(10). 20 indexed citations
9.
Saenger, K. L., J. P. de Souza, Keith Fogel, et al.. (2007). Mixed Orientation Si–Si Interfaces by Hydrophilic Bonding and High Temperature Oxide Dissolution. Journal of The Electrochemical Society. 155(2). H80–H80. 1 indexed citations
10.
Yin, H., Zhibin Ren, H. Chen, et al.. (2006). Integration of Local Stress Techniques with Strained-Si Directly on Insulator (SSDOI) Substrates. 76–77. 4 indexed citations
11.
Peterson, Rebecca L., Karl D. Hobart, Fritz J. Kub, H. Yin, & James C. Sturm. (2006). Reduced buckling in one dimension versus two dimensions of a compressively strained film on a compliant substrate. Applied Physics Letters. 88(20). 19 indexed citations
12.
Peterson, Rebecca L., Karl D. Hobart, H. Yin, Fritz J. Kub, & James C. Sturm. (2006). Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substrates. Journal of Applied Physics. 100(2). 11 indexed citations
13.
Saenger, K. L., J. P. de Souza, Keith Fogel, et al.. (2006). Amorphization/templated Recrystallization (ATR) Method for Hybrid Orientation Substrates. MRS Proceedings. 913. 1 indexed citations
14.
Ren, Zhibin, M. Ieong, Jian Cai, et al.. (2006). Selective epitaxial channel ground plane thin SOI CMOS devices. 42. 733–736. 5 indexed citations
15.
Saenger, K. L., J. P. de Souza, Keith Fogel, et al.. (2005). Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates. Applied Physics Letters. 87(22). 24 indexed citations
16.
Peterson, Rebecca L., Karl D. Hobart, H. Yin, & James C. Sturm. (2005). Crystal-direction dependence of uniaxial tensile strain in ultra-thin SOI. 25. 39–41. 1 indexed citations
17.
Yin, H., Rebecca L. Peterson, Karl D. Hobart, et al.. (2003). Relaxed SiGe Layers with High Ge Content by Compliant Substrates. MRS Proceedings. 765. 1 indexed citations
18.
Yin, H., Rebecca L. Peterson, Karl D. Hobart, et al.. (2003). Relaxed SiGe Layers with High Ge Content by Compliant Substrates. MRS Proceedings. 768.
19.
Liang, J.-Q., Rui Huang, H. Yin, et al.. (2002). Relaxation of compressed elastic islands on a viscous layer. Acta Materialia. 50(11). 2933–2944. 38 indexed citations
20.
Yin, H., Rui Huang, Karl D. Hobart, et al.. (2002). Strain relaxation of SiGe islands on compliant oxide. Journal of Applied Physics. 91(12). 9716–9722. 60 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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