T. Bertaud

1.0k total citations
24 papers, 899 citations indexed

About

T. Bertaud is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, T. Bertaud has authored 24 papers receiving a total of 899 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 14 papers in Materials Chemistry and 2 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in T. Bertaud's work include Ferroelectric and Negative Capacitance Devices (19 papers), Advanced Memory and Neural Computing (17 papers) and Semiconductor materials and devices (12 papers). T. Bertaud is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (19 papers), Advanced Memory and Neural Computing (17 papers) and Semiconductor materials and devices (12 papers). T. Bertaud collaborates with scholars based in Germany, France and China. T. Bertaud's co-authors include Thomas Schroeder, Damian Walczyk, M. Sowińska, Christian Walczyk, Mindaugas Lukosius, Christian Wenger, Bernd Tillack, A. Gloskovskii, Mirko Fraschke and Lambert Alff and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and ACS Applied Materials & Interfaces.

In The Last Decade

T. Bertaud

24 papers receiving 888 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Bertaud Germany 15 876 274 188 123 27 24 899
Damian Walczyk Germany 16 900 1.0× 332 1.2× 202 1.1× 136 1.1× 37 1.4× 22 996
Christian Walczyk Germany 16 868 1.0× 223 0.8× 208 1.1× 137 1.1× 18 0.7× 23 904
C. Gopalan United States 10 633 0.7× 203 0.7× 152 0.8× 185 1.5× 18 0.7× 13 660
Luca Vandelli Italy 18 1.6k 1.8× 347 1.3× 214 1.1× 166 1.3× 28 1.0× 37 1.6k
Godeuni Choi South Korea 12 729 0.8× 197 0.7× 167 0.9× 278 2.3× 25 0.9× 15 754
L. Altimime Belgium 19 1.3k 1.4× 323 1.2× 235 1.3× 191 1.6× 19 0.7× 48 1.3k
M. Park United States 4 572 0.7× 253 0.9× 144 0.8× 161 1.3× 20 0.7× 10 604
Manzar Siddik South Korea 16 554 0.6× 168 0.6× 145 0.8× 207 1.7× 19 0.7× 31 586
P. J. Tzeng Taiwan 12 1.2k 1.3× 340 1.2× 144 0.8× 180 1.5× 23 0.9× 30 1.2k
S. Z. Rahaman Taiwan 17 830 0.9× 202 0.7× 233 1.2× 214 1.7× 25 0.9× 49 859

Countries citing papers authored by T. Bertaud

Since Specialization
Citations

This map shows the geographic impact of T. Bertaud's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Bertaud with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Bertaud more than expected).

Fields of papers citing papers by T. Bertaud

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Bertaud. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Bertaud. The network helps show where T. Bertaud may publish in the future.

Co-authorship network of co-authors of T. Bertaud

This figure shows the co-authorship network connecting the top 25 collaborators of T. Bertaud. A scholar is included among the top collaborators of T. Bertaud based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Bertaud. T. Bertaud is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sowińska, M., T. Bertaud, Damian Walczyk, et al.. (2014). Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory.. ACS Applied Materials & Interfaces. 6(7). 5056–5060. 55 indexed citations
2.
Sharath, S. U., J. Kurian, Philipp Komissinskiy, et al.. (2014). Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories. Applied Physics Letters. 105(7). 73505–73505. 58 indexed citations
3.
4.
Zambelli, Cristian, Alessandro Grossi, P. Olivo, et al.. (2014). Statistical analysis of resistive switching characteristics in ReRAM test arrays. Institutional Research Information System University of Ferrara (University of Ferrara). 27–31. 26 indexed citations
5.
Fröhlich, K., Peter Jančovič, Boris Hudec, et al.. (2013). Atomic Layer Deposition of Thin Oxide Films for Resistive Switching. ECS Transactions. 58(10). 163–170. 4 indexed citations
6.
Fröhlich, K., Peter Jančovič, Boris Hudec, et al.. (2013). Atomic Layer Deposition of Thin Oxide Films for Resistive Switching. ECS Meeting Abstracts. MA2013-02(24). 1878–1878. 1 indexed citations
7.
Bertaud, T., Damian Walczyk, M. Sowińska, et al.. (2013). (Invited) HfO2-Based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays. ECS Transactions. 50(4). 21–26. 15 indexed citations
8.
Sowińska, M., T. Bertaud, Damian Walczyk, et al.. (2012). Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures. Applied Physics Letters. 100(23). 85 indexed citations
9.
Bertaud, T., M. Sowińska, Damian Walczyk, et al.. (2012). Resistive switching of Ti/HfO2-based memory devices: impact of the atmosphere and the oxygen partial pressure. IOP Conference Series Materials Science and Engineering. 41. 12018–12018. 2 indexed citations
10.
Walczyk, Damian, T. Bertaud, M. Sowińska, et al.. (2012). Resistive switching behavior in TiN/HfO<inf>2</inf>/Ti/TiN devices. 22. 143–146. 20 indexed citations
11.
Bertaud, T., et al.. (2012). Electrical Characterization of Advanced MIM Capacitors With ${\rm ZrO}_{2}$ Insulator for High-Density Packaging and RF Applications. IEEE Transactions on Components Packaging and Manufacturing Technology. 2(3). 502–509. 18 indexed citations
12.
Bertaud, T., Christian Walczyk, Damian Walczyk, et al.. (2012). HfO2-based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays. ECS Meeting Abstracts. MA2012-02(31). 2577–2577. 1 indexed citations
13.
Bertaud, T., M. Sowińska, Damian Walczyk, et al.. (2012). In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard x-ray photoelectron spectroscopy. Applied Physics Letters. 101(14). 143501–143501. 56 indexed citations
14.
Bertaud, T., et al.. (2011). Ultra wide band frequency characterization of integrated TiTaO-based metal–insulator–metal devices. Journal of Applied Physics. 110(4). 8 indexed citations
15.
Reinhardt, Alexandre, C. Billard, Emmanuel Defaÿ, et al.. (2011). Lateral Field Excitation of membrane-based Aluminum Nitride resonators. 6. 1–5. 5 indexed citations
16.
Walczyk, Christian, Damian Walczyk, Thomas Schroeder, et al.. (2011). Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices. IEEE Transactions on Electron Devices. 58(9). 3124–3131. 201 indexed citations
17.
Walczyk, Damian, Ch. Walczyk, Thomas Schroeder, et al.. (2011). Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells. Microelectronic Engineering. 88(7). 1133–1135. 52 indexed citations
18.
Bertaud, T., Emmanuel Defaÿ, C. Bermond, et al.. (2010). Wideband frequency and in situ characterization of aluminum nitride (AlN) in a metal/insulator/metal (MIM) configuration. Microelectronic Engineering. 88(5). 564–568. 1 indexed citations
19.
20.
Vo, Trinh, T. Lacrevaz, C. Bermond, et al.. (2008). In situ microwave characterisation of medium- k HfO 2 and high- k SrTiO 3 dielectrics for metal–insulator–metal capacitors integrated in back-end of line of integrated circuits. IET Microwaves Antennas & Propagation. 2(8). 781–788. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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