T. Bertaud

1.0k citations

24 papers · 899 indexed · h-index 15

Impact in

Electrical and Electronic Engineering top 5%
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
Cellular and Molecular Neuroscience top 10%
- Neuroscience and Neural Engineering

Papers in ⓘ

Electrical and Electronic Engineering 23
- Ferroelectric and Negative Capacitance Devices 19
- Advanced Memory and Neural Computing 17
- Semiconductor materials and devices 12
Materials Chemistry 14
- Electronic and Structural Properties of Oxides 11
- Ferroelectric and Piezoelectric Materials 4

Co-authors: Thomas Schroeder (16 shared papers)Damian Walczyk (13 shared papers)M. Sowińska (12 shared papers)Christian Walczyk (7 shared papers)Mindaugas Lukosius (4 shared papers)Christian Wenger (7 shared papers)Bernd Tillack (6 shared papers)A. Gloskovskii (3 shared papers)
Journals: Applied Physics Letters (4 papers)Microelectronic Engineering (3 papers)Journal of Applied Physics (2 papers)IEEE Transactions on Components Packaging and Manufacturing Technology (1 paper)IEEE Electron Device Letters (1 paper)
Partner nations: Germany France Spain

In The Last Decade

T. Bertaud

24 papers receiving 888 citations

Peers

Countries citing papers authored by T. Bertaud

Since Specialization

Citations

This map shows the geographic impact of T. Bertaud's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Bertaud with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Bertaud more than expected).

Fields of papers citing papers by T. Bertaud

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Bertaud. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Bertaud. The network helps show where T. Bertaud may publish in the future.

Co-authors

The 25 scholars most cited alongside T. Bertaud, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. Bertaud Line = papers co-authored together T. Bertaud links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 24 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices IEEE Transactions on Electron Devices ·Christian Walczyk, Damian Walczyk, Thomas Schroeder, T. Bertaud, M. Sowińska, Mindaugas Lukosius, Mirko Fraschke, D. Wolansky, Bernd Tillack, E. Miranda, Christian Wenger	2011	201
2	Towards forming-free resistive switching in oxygen engineered HfO2−x Applied Physics Letters ·S. U. Sharath, T. Bertaud, J. Kurian, Erwin Hildebrandt, Cezary J. Walczyk, P. Calka, P. Zaumseil, M. Sowińska, Damian Walczyk, A. Gloskovskii, Thomas Schroeder, Lambert Alff	2014	153
3	Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures Applied Physics Letters ·M. Sowińska, T. Bertaud, Damian Walczyk, S. Thieß, Markus Andreas Schubert, Mindaugas Lukosius, W. Drube, Ch. Walczyk, Thomas Schroeder	2012	85
4	Thickness independent reduced forming voltage in oxygen engineered HfO₂ based resistive switching memories Applied Physics Letters ·S. U. Sharath, J. Kurian, Philipp Komissinskiy, Erwin Hildebrandt, T. Bertaud, Cezary J. Walczyk, P. Calka, Thomas Schroeder, Lambert Alff	2014	58
5	In-operando and non-destructive analysis of the resistive switching in the Ti/HfO₂/TiN-based system by hard x-ray photoelectron spectroscopy Applied Physics Letters ·T. Bertaud, M. Sowińska, Damian Walczyk, S. Thieß, A. Gloskovskii, Christian Walczyk, Thomas Schroeder	2012	56
6	Engineering of the Chemical Reactivity of the Ti/HfO₂ Interface for RRAM: Experiment and Theory. ACS Applied Materials & Interfaces ·Pauline Calka, M. Sowińska, T. Bertaud, Damian Walczyk, J. Da̧browski, P. Zaumseil, Christian Walczyk, A. Gloskovskii, Xavier Cartoixà, J. Suñé, Thomas Schroeder	2014	55
7	Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells Microelectronic Engineering ·Damian Walczyk, Ch. Walczyk, Thomas Schroeder, T. Bertaud, M. Sowińska, Mindaugas Lukosius, Mirko Fraschke, Bernd Tillack, Christian Wenger	2011	52
8	In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO2/TiN cells Journal of Applied Physics ·M. Sowińska, T. Bertaud, Damian Walczyk, S. Thieß, Pauline Calka, Lambert Alff, Christian Walczyk, Thomas Schroeder	2014	50
9	Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material Thin Solid Films ·T. Bertaud, Damian Walczyk, Ch. Walczyk, S. Kubotsch, M. Sowińska, Thomas Schroeder, Christian Wenger, C. Vallée, P. Gonon, C. Mannequin, V. Jousseaume, H. Grampeix	2011	35
10	Frequency Effect on Voltage Linearity of $ \hbox{ZrO}_{2}$-Based RF Metal–Insulator–Metal Capacitors IEEE Electron Device Letters ·T. Bertaud, S. Blonkowski, C. Bermond, C. Vallée, P. Gonon, M. Gros‐Jean, B. Fléchet	2010	29
11	Statistical analysis of resistive switching characteristics in ReRAM test arrays Institutional Research Information System University of Ferrara (University of Ferrara) ·Cristian Zambelli, Alessandro Grossi, P. Olivo, Damian Walczyk, T. Bertaud, Bernd Tillack, Thomas Schroeder, Valeriy Stikanov, Christian Walczyk	2014	26
12	Resistive switching behavior in TiN/HfO<inf>2</inf>/Ti/TiN devices Damian Walczyk, T. Bertaud, M. Sowińska, Mindaugas Lukosius, Markus Andreas Schubert, A. Fox, D. Wolansky, A. Scheit, Mirko Fraschke, Gunter Schoof, Ch. Wolf, Rolf Kraemer, Bernd Tillack, R. Korolevych, Valeriy Stikanov, Christian Wenger, Thomas Schroeder, Ch. Walczyk	2012	20
13	Electrical Characterization of Advanced MIM Capacitors With ${\rm ZrO}_{2}$ Insulator for High-Density Packaging and RF Applications IEEE Transactions on Components Packaging and Manufacturing Technology ·T. Bertaud, C. Bermond, S. Blonkowski, C. Vallée, Thierry Lacrevaz, A. Farcy, M. Gros‐Jean, Bernard Flechet	2012	18
14	Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors Microelectronic Engineering ·T. Bertaud, C. Bermond, T. Lacrevaz, C. Vallée, Y. Morand, B. Fléchet, A. Farcy, M. Gros‐Jean, S. Blonkowski	2009	17
15	(Invited) HfO₂-Based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays ECS Transactions ·T. Bertaud, Damian Walczyk, M. Sowińska, D. Wolansky, Bernd Tillack, Gunter Schoof, Valery Stikanov, Christian Wenger, S. Thieß, Thomas Schroeder, Christian Walczyk	2013	15
16	Ultra wide band frequency characterization of integrated TiTaO-based metal–insulator–metal devices Journal of Applied Physics ·T. Bertaud, C. Bermond, Fatiha Challali, A. Goullet, C. Vallée, Bernard Fléchet	2011	8
17	Lateral Field Excitation of membrane-based Aluminum Nitride resonators M. Gorisse, Alexandre Reinhardt, C. Billard, Michel Borel, Emmanuel Defaÿ, T. Bertaud, T. Lacrevaz, C. Bermond	2011	5
18	In situ microwave characterisation of medium- k HfO ₂ and high- k SrTiO ₃ dielectrics for metal–insulator–metal capacitors integrated in back-end of line of integrated circuits IET Microwaves Antennas & Propagation ·Trinh Vo, T. Lacrevaz, C. Bermond, T. Bertaud, Bernard Fléchet, A. Farcy, Y. Morand, S. Blonkowski, J. Torrès, B. Guigues, Emmanuel Defaÿ	2008	5
19	Atomic Layer Deposition of Thin Oxide Films for Resistive Switching ECS Transactions ·K. Fröhlich, Peter Jančovič, Boris Hudec, J. Dérer, A. Paskaleva, T. Bertaud, Thomas Schroeder	2013	4
20	Dc to radio-frequency characterization of zro₂ dielectric for "metal-insulator-metal" integrated capacitors T. Bertaud, C. Vallée, C. Bermond, T. Lacrevaz, B. Flechet, A. Farcy, S. Blonkovski	2009	2

About T. Bertaud

T. Bertaud is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics and Cellular and Molecular Neuroscience, having authored 24 papers that have together received 899 indexed citations. Recurring topics across this work include Ferroelectric and Negative Capacitance Devices (19 papers), Advanced Memory and Neural Computing (17 papers), Semiconductor materials and devices (12 papers), Electronic and Structural Properties of Oxides (11 papers), Ferroelectric and Piezoelectric Materials (4 papers), Acoustic Wave Resonator Technologies (2 papers), Copper Interconnects and Reliability (2 papers) and GaN-based semiconductor devices and materials (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (876 citations), Cellular and Molecular Neuroscience (188 citations), Polymers and Plastics (123 citations), Materials Chemistry (274 citations) and Hardware and Architecture (13 citations). T. Bertaud has collaborated with scholars based in Germany, France and Spain. Frequent co-authors include Thomas Schroeder, Damian Walczyk, M. Sowińska, Christian Walczyk, Mindaugas Lukosius, Christian Wenger, Bernd Tillack, A. Gloskovskii, Lambert Alff and S. Thieß. Their work appears in journals such as Applied Physics Letters, Microelectronic Engineering, Journal of Applied Physics, IEEE Transactions on Components Packaging and Manufacturing Technology and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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