P. J. Tzeng

1.4k total citations · 1 hit paper
30 papers, 1.2k citations indexed

About

P. J. Tzeng is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, P. J. Tzeng has authored 30 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 10 papers in Materials Chemistry and 3 papers in Mechanics of Materials. Recurrent topics in P. J. Tzeng's work include Semiconductor materials and devices (17 papers), Advanced Memory and Neural Computing (16 papers) and Ferroelectric and Negative Capacitance Devices (13 papers). P. J. Tzeng is often cited by papers focused on Semiconductor materials and devices (17 papers), Advanced Memory and Neural Computing (16 papers) and Ferroelectric and Negative Capacitance Devices (13 papers). P. J. Tzeng collaborates with scholars based in Taiwan and United States. P. J. Tzeng's co-authors include M.-J. Tsai, Chenhsin Lien, Chien-Ting Lin, Tong Wu, S. Maikap, Jer‐Ren Yang, M.‐J. Tsai, F. Chen, Ting Wu and Chia‐Hua Lin and has published in prestigious journals such as Applied Physics Letters, Japanese Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

P. J. Tzeng

28 papers receiving 1.2k citations

Hit Papers

Low power and high speed bipolar switching with a thin re... 2008 2026 2014 2020 2008 100 200 300 400 500
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM
    2008 505 citations P. J. Tzeng, Chenhsin Lien et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. J. Tzeng Taiwan 12 1.2k 340 180 144 53 30 1.2k
Pei-Jer Tzeng Taiwan 16 798 0.7× 231 0.7× 89 0.5× 77 0.5× 24 0.5× 61 822
Attilio Belmonte Belgium 22 1.7k 1.4× 370 1.1× 332 1.8× 423 2.9× 68 1.3× 94 1.7k
Xiaohan Wu United States 16 1.3k 1.1× 747 2.2× 212 1.2× 228 1.6× 44 0.8× 38 1.5k
Damien Deleruyelle France 17 789 0.7× 241 0.7× 137 0.8× 156 1.1× 56 1.1× 66 844
A. Redolfi Belgium 25 1.6k 1.4× 275 0.8× 180 1.0× 219 1.5× 82 1.5× 89 1.6k
Songman Ju China 11 528 0.5× 371 1.1× 120 0.7× 112 0.8× 63 1.2× 16 674
Christina Schindler Germany 15 1.4k 1.2× 354 1.0× 407 2.3× 454 3.2× 27 0.5× 32 1.4k
Victoria Chen United States 10 772 0.7× 531 1.6× 129 0.7× 220 1.5× 40 0.8× 16 1.0k
Rebecca Park United States 7 664 0.6× 379 1.1× 75 0.4× 101 0.7× 74 1.4× 8 883
T. Witters Belgium 17 759 0.6× 408 1.2× 85 0.5× 67 0.5× 76 1.4× 59 829

Countries citing papers authored by P. J. Tzeng

Since Specialization
Citations

This map shows the geographic impact of P. J. Tzeng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. J. Tzeng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. J. Tzeng more than expected).

Fields of papers citing papers by P. J. Tzeng

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. J. Tzeng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. J. Tzeng. The network helps show where P. J. Tzeng may publish in the future.

Co-authorship network of co-authors of P. J. Tzeng

This figure shows the co-authorship network connecting the top 25 collaborators of P. J. Tzeng. A scholar is included among the top collaborators of P. J. Tzeng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. J. Tzeng. P. J. Tzeng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lü, Aifeng, P. J. Tzeng, M. H. Chang, et al.. (2024). P-type SnO Semiconductor Transistor and Application. 1–2. 3 indexed citations
2.
Chang, Hwan‐You, Chi‐Hsien Chien, Jen Chun Wang, et al.. (2014). Process integration for backside illuminated image sensor stacked with Analog-to-Digital Conversion chip. 44. 39–43. 2 indexed citations
3.
Ku, Tzu-Kun, Chia‐Hua Lin, P. J. Tzeng, et al.. (2013). (Invited) Technologies and Challenges of Fine Pitch Backside Via-Last TSV Process Integration for 3DIC Applications. ECS Transactions. 52(1). 3–6. 4 indexed citations
4.
Li, Li, Peng Su, Jie Xue, et al.. (2012). Addressing bandwidth challenges in next generation high performance network systems with 3D IC integration. 1040–1046. 29 indexed citations
5.
Chang, Hwan‐You, John H. Lau, Wei‐Chi Tsai, et al.. (2011). Thin Wafer Handling of 300mm Wafer for 3D IC Integration. IMAPSource Proceedings. 2011(1). 202–207. 6 indexed citations
6.
7.
Rahaman, S. Z., S. Maikap, Hsien‐Chin Chiu, et al.. (2010). Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte. Electrochemical and Solid-State Letters. 13(5). H159–H159. 56 indexed citations
8.
Das, Atanu, S. Maikap, Chia‐Hua Lin, et al.. (2009). Ruthenium oxide metal nanocrystal capacitors with high-κ dielectric tunneling barriers for nanoscale nonvolatile memory device applications. Microelectronic Engineering. 87(10). 1821–1827. 3 indexed citations
9.
Rahaman, S. Z., S. Maikap, Chen-Hsi Lin, et al.. (2009). Low current and voltage resistive switching memory device using novel Cu/Ta<inf>2</inf>O<inf>5</inf>/W structure. 331. 33–34. 2 indexed citations
10.
Rahaman, S. Z., S. Maikap, Hsien‐Chin Chiu, et al.. (2009). Low Power Operation of Resistive Switching Memory Device Using Novel W/Ge0.4Se0.6/Cu/Al Structure. 21. 1–4. 5 indexed citations
11.
Wu, Ting, et al.. (2009). Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap. IEEE Electron Device Letters. 31(1). 44–46. 166 indexed citations
12.
13.
Tzeng, P. J., et al.. (2008). Crucial integration of high work-function metal gate and high-k blocking oxide on charge-trapping type flash memory device. Applied Physics Letters. 93(25). 11 indexed citations
14.
Maikap, S., S. Z. Rahaman, Writam Banerjee, et al.. (2008). Enhanced flash memory device characteristics using ALD TiN/Al<inf>2</inf>O<inf>3</inf> nanolaminate charge storage layers. 91. 958–961. 1 indexed citations
15.
Maikap, S., et al.. (2007). Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2∕TiO2 multilayers. Applied Physics Letters. 90(26). 54 indexed citations
16.
Maikap, S., et al.. (2007). Charge storage characteristics of atomic layer deposited RuOx nanocrystals. Applied Physics Letters. 90(25). 41 indexed citations
17.
Maikap, S., et al.. (2007). Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors. Applied Physics Letters. 91(4). 31 indexed citations
18.
19.
Lin, Chia‐Hua, et al.. (2006). Microstructural Evolution of Metal–Insulator–Metal Capacitor Prepared by Atomic-Layer-Deposition System at Elevated Temperature. Japanese Journal of Applied Physics. 45(4S). 3036–3036. 6 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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