B.-I. Ryu

1.3k total citations · 1 hit paper
18 papers, 1.1k citations indexed

About

B.-I. Ryu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computer Networks and Communications. According to data from OpenAlex, B.-I. Ryu has authored 18 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 4 papers in Computer Networks and Communications. Recurrent topics in B.-I. Ryu's work include Semiconductor materials and devices (11 papers), Advanced Memory and Neural Computing (6 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). B.-I. Ryu is often cited by papers focused on Semiconductor materials and devices (11 papers), Advanced Memory and Neural Computing (6 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). B.-I. Ryu collaborates with scholars based in South Korea. B.-I. Ryu's co-authors include U‐In Chung, J.T. Moon, Eun-Soon Yim, Myoung‐Jae Lee, Seung‐Eon Ahn, In-Hwan Baek, In Kyeong Yoo, Sunae Seo, Dongseok Suh and Bae Ho Park and has published in prestigious journals such as Applied Physics Letters and Proceedings - International Symposium for Testing and Failure Analysis.

In The Last Decade

B.-I. Ryu

16 papers receiving 1.1k citations

Hit Papers

Electrical observations of filamentary conductions for th... 2006 2026 2012 2019 2006 100 200 300 400
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Electrical observations of filamentary conductions for the resistive memory switching in NiO films
    2006 463 citations Sunae Seo, Seung‐Eon Ahn et al. Applied Physics Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B.-I. Ryu South Korea 12 1.1k 444 372 140 81 18 1.1k
Ugo Russo Italy 13 1.4k 1.3× 582 1.3× 456 1.2× 317 2.3× 126 1.6× 19 1.5k
M. Kund Germany 15 852 0.8× 523 1.2× 235 0.6× 139 1.0× 219 2.7× 24 1.1k
Kyung‐Chang Ryoo South Korea 13 596 0.6× 341 0.8× 138 0.4× 94 0.7× 117 1.4× 42 683
Scott W. Fong United States 10 696 0.6× 599 1.3× 233 0.6× 73 0.5× 83 1.0× 20 861
M.‐J. Tsai Taiwan 12 962 0.9× 305 0.7× 131 0.4× 116 0.8× 27 0.3× 43 1000
Alvaro Padilla United States 10 705 0.7× 330 0.7× 147 0.4× 119 0.8× 38 0.5× 12 755
Hideyuki Noshiro Japan 11 812 0.8× 231 0.5× 264 0.7× 150 1.1× 36 0.4× 31 861
Agostino Pirovano Italy 12 607 0.6× 390 0.9× 127 0.3× 105 0.8× 79 1.0× 16 671
In-Hwan Baek South Korea 12 1.9k 1.7× 658 1.5× 660 1.8× 304 2.2× 118 1.5× 24 2.0k
P. J. Tzeng Taiwan 12 1.2k 1.1× 340 0.8× 180 0.5× 144 1.0× 23 0.3× 30 1.2k

Countries citing papers authored by B.-I. Ryu

Since Specialization
Citations

This map shows the geographic impact of B.-I. Ryu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B.-I. Ryu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B.-I. Ryu more than expected).

Fields of papers citing papers by B.-I. Ryu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B.-I. Ryu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B.-I. Ryu. The network helps show where B.-I. Ryu may publish in the future.

Co-authorship network of co-authors of B.-I. Ryu

This figure shows the co-authorship network connecting the top 25 collaborators of B.-I. Ryu. A scholar is included among the top collaborators of B.-I. Ryu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B.-I. Ryu. B.-I. Ryu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
Park, Hae‐Sim, J.H. Park, Dae-Hwan Ahn, et al.. (2007). Highly Scalable Phase Change Memory with CVD GeSbTe for Sub 50nm Generation. 102–103. 62 indexed citations
2.
Moon, Chang-Rok, Sung‐Nam Lee, In‐Seok Yeo, et al.. (2006). Novel Charge Trap Devices with NCBO Trap Layers for NVM or Image Sensor. 5301. 1–4. 14 indexed citations
3.
Kim, Min-Sang, Yousub Lee, Dongwook Kim, et al.. (2006). 122 Mb High Speed SRAM Cell with 25 nm Gate Length Multi-Bridge-Channel MOSFET (MBCFET) on Bulk Si Substrate. 68–69. 11 indexed citations
4.
5.
Seo, Sunae, Seung‐Eon Ahn, Dongseok Suh, et al.. (2006). Electrical observations of filamentary conductions for the resistive memory switching in NiO films. Applied Physics Letters. 88(20). 463 indexed citations breakdown →
6.
Lee, Myoung‐Jae, Seung‐Eon Ahn, Sunae Seo, et al.. (2006). Improvement of resistive memory switching in NiO using IrO2. Applied Physics Letters. 88(23). 176 indexed citations
7.
Baek, In-Hwan, Myoung‐Jae Lee, Eun-Soon Yim, et al.. (2006). Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application. 750–753. 178 indexed citations
8.
Kim, Sung Woo, Yoon-Seok Choi, K. Lee, et al.. (2006). A 4-Bit Double SONOS Memory (DSM) with 4 Storage Nodes per Cell for Ultimate Multi-Bit Operation. 40–41. 11 indexed citations
9.
Cho, Eunyoung, Byungjin Cho, Czang-Ho Lee, et al.. (2006). Technology Breakthrough of Body-Tied FinFET for sub 50 nm NOR Flash Memory. 45. 90–91. 5 indexed citations
10.
11.
12.
Ahn, Youngkeun, Sang‐Wook Cheong, Dongjin Lee, et al.. (2006). Trap Layer Engineered FinFET NAND Flash with Enhanced Memory Window. 88–89. 12 indexed citations
13.
Park, Jong‐Ho, Sung‐Hoi Hur, Jongsun Sel, et al.. (2005). 8Gb MLC (Multi-Level Cell) NAND flash memory using 63nm process technology. 873–876. 38 indexed citations
14.
Im, D.H., S.O. Park, H.S. Kim, et al.. (2005). Highly reliable 50nm-thick PZT capacitor and low voltage FRAM device using Ir/SrRuO/sub 3//MOCVD PZT capacitor technology. 100–101. 12 indexed citations
15.
16.
Choi, Jung-Hwan, et al.. (2005). Analysis of DRAM Standby Current Failure due to Hot Electron Induced Punch-through (HEIP) of PMOS transistor. Proceedings - International Symposium for Testing and Failure Analysis. 30880. 186–188.
17.
Song, Youjian, C.W. Jeong, Jaekyung Shin, et al.. (2005). Highly manufacturable high density phase change memory of 64Mb and beyond. 907–910. 65 indexed citations
18.
Yi, J.H., Y.H. Ha, Bong Jin Kuh, et al.. (2005). Highly scalable on-axis confined cell structure for high density PRAM beyond 256Mb. 96–97. 58 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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