B.-I. Ryu

1.3k citations

18 papers · 1.1k indexed · 1 hit paper · h-index 12

Impact in

Polymers and Plastics top 5%
- Transition Metal Oxide Nanomaterials
Electrical and Electronic Engineering top 5%
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Chalcogenide Semiconductor Thin Films

Papers in ⓘ

Electrical and Electronic Engineering 17
- Semiconductor materials and devices 11
- Advanced Memory and Neural Computing 6
- Advancements in Semiconductor Devices and Circuit Design 5
- Ferroelectric and Negative Capacitance Devices 3
- Integrated Circuits and Semiconductor Failure Analysis 3
Computer Networks and Communications 4
- Advanced Data Storage Technologies 4

Co-authors: U‐In Chung (8 shared papers)J.T. Moon (5 shared papers)Seung‐Eon Ahn (3 shared papers)Myoung‐Jae Lee (3 shared papers)Eun-Soon Yim (3 shared papers)In-Hwan Baek (3 shared papers)Sunae Seo (2 shared papers)In Kyeong Yoo (2 shared papers)
Journals: Applied Physics Letters (2 papers)Proceedings - International Symposium for Testing and Failure Analysis (1 paper)
Partner nations: South Korea

In The Last Decade

B.-I. Ryu

16 papers receiving 1.1k citations

Hit Papers

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Electrical observations of filamentary conductions for the resistive memory switching in NiO films 2006 · 463 citations

Peers

Countries citing papers authored by B.-I. Ryu

Since Specialization

Citations

This map shows the geographic impact of B.-I. Ryu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B.-I. Ryu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B.-I. Ryu more than expected).

Fields of papers citing papers by B.-I. Ryu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B.-I. Ryu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B.-I. Ryu. The network helps show where B.-I. Ryu may publish in the future.

Co-authors

The 25 scholars most cited alongside B.-I. Ryu, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B.-I. Ryu Line = papers co-authored together B.-I. Ryu links everyone, so they are left out of the graph.

All Works

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18 of 18 papers shown

#	Work
1	Electrical observations of filamentary conductions for the resistive memory switching in NiO films Applied Physics Letters ·Dongso Kim, Sunae Seo, Seung‐Eon Ahn, Dongseok Suh, Myoung‐Jae Lee, Bae Ho Park, In Kyeong Yoo, In-Hwan Baek, H.-J. Kim, Eun-Soon Yim, J. E. Lee, S. O. Park, H. S. Kim, U‐In Chung, J.T. Moon, B.-I. Ryu Hit paper breakdown →	2006	463
2	Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application In-Hwan Baek, D.C. Kim, Myoung‐Jae Lee, H.-J. Kim, Eun-Soon Yim, M.S. Lee, J.E. Lee, Seung‐Eon Ahn, Sehun Seo, J.H. Lee, J.C. Park, Yu‐Jung Cha, S.O. Park, H.S. Kim, I.-K. Yoo, U‐In Chung, J.T. Moon, B.-I. Ryu	2006	178
3	Improvement of resistive memory switching in NiO using IrO2 Applied Physics Letters ·D. C. Kim, Myoung‐Jae Lee, Seung‐Eon Ahn, Sunae Seo, J. C. Park, In Kyeong Yoo, In-Hwan Baek, Hong Jip Kim, Eun-Soon Yim, J. E. Lee, S. O. Park, H. S. Kim, U‐In Chung, J.T. Moon, B.-I. Ryu	2006	176
4	Highly manufacturable high density phase change memory of 64Mb and beyond Sung-Tae Ahn, Youjian Song, C.W. Jeong, Jaekyung Shin, Y. Fai, Y.N. Hwang, Sojung Lee, Kyung‐Chang Ryoo, Sangyoon Lee, J.H. Park, Hideki Horii, Y.H. Ha, J.H. Yi, Bong Jin Kuh, G.H. Koh, G.T. Jeong, H.S. Jeong, Kinam Kim, B.-I. Ryu	2005	65
5	Highly Scalable Phase Change Memory with CVD GeSbTe for Sub 50nm Generation J.I. Lee, Hae‐Sim Park, S.L. Cho, Y.L. Park, B.J. Bae, J.H. Park, J.S. Park, Hyunjin An, J.S. Bae, Dae-Hwan Ahn, Y.T. Kim, Hideki Horii, S.A. Song, Jaeyoung Shin, S.O. Park, H.S. Kim, U‐In Chung, J.T. Moon, B.-I. Ryu	2007	62
6	Highly scalable on-axis confined cell structure for high density PRAM beyond 256Mb S.L. Cho, J.H. Yi, Y.H. Ha, Bong Jin Kuh, C.M. Lee, J.H. Park, Seokwoo Nam, Hideki Horii, Beak-Hyung Cho, Kyung‐Chang Ryoo, S.O. Park, H.S. Kim, U‐In Chung, Joo Tae Moon, B.-I. Ryu	2005	58
7	8Gb MLC (Multi-Level Cell) NAND flash memory using 63nm process technology Jong‐Ho Park, Sung‐Hoi Hur, Joun-Hee Lee, Jin-Taek Park, Jongsun Sel, Jong‐Won Kim, Sang‐Bin Song, Jung‐Young Lee, Ji-Hwon Lee, Suk-Joon Son, Yong-Seok Kim, Min-Cheol Park, S.M. Chai, Jungdal Choi, U.-I. Chung, Joo-Tae Moon, Kyung-Hyun Kim, Kinam Kim, B.-I. Ryu	2005	38
8	Novel Charge Trap Devices with NCBO Trap Layers for NVM or Image Sensor Kyong-Hee Joo, Chang-Rok Moon, Sung‐Nam Lee, Xiofeng Wang, Jun Yang, In‐Seok Yeo, Duck‐Hyung Lee, Okhyun Nam, U‐In Chung, Joo Tae Moon, B.-I. Ryu	2006	14
9	SONOS-Type FinFET Device Using P+ Poly-Si Gate and High-k Blocking Dielectric Integrated on Cell Array and GSL/SSL for Multi-Gigabit NAND Flash Memory S.‐K. Sung, D. Kim, Yun‐Song Lee, S. Kim, D. Park, B.-I. Ryu, Sanghoon Lee, Byung Chul Choi, JinHan Lee, Jeong Dong Choe, Eunyoung Cho, Y. H. Ahn, Dukhyun Choi, C.-H. Lee	2006	14
10	Highly reliable 50nm-thick PZT capacitor and low voltage FRAM device using Ir/SrRuO/sub 3//MOCVD PZT capacitor technology Dong Chul Yoo, B.J. Bae, Jong-Chun Lim, D.H. Im, S.O. Park, H.S. Kim, U‐In Chung, J.T. Moon, B.-I. Ryu	2005	12
11	Trap Layer Engineered FinFET NAND Flash with Enhanced Memory Window Youngkeun Ahn, Sang‐Wook Cheong, Dongjin Lee, Sung Woo Kim, D. Park, B.-I. Ryu, Jeong Dong Choe, Jinseok Lee, Dong-Uk Choi, Eunyoung Cho, Bo-ram Choi, S.-H. Lee, S.‐K. Sung, C.-H. Lee	2006	12
12	122 Mb High Speed SRAM Cell with 25 nm Gate Length Multi-Bridge-Channel MOSFET (MBCFET) on Bulk Si Substrate Min-Sang Kim, Yousub Lee, Dongwook Kim, Donggun Park, B.-I. Ryu, Sung Yong Lee, Eunchul Yoon, Sung Min Kim, J. Lian, K.-H. Lee, Nam Ung Cho, Myung‐Shik Lee, D. Hwang	2006	11
13	A 4-Bit Double SONOS Memory (DSM) with 4 Storage Nodes per Cell for Ultimate Multi-Bit Operation Changsuk Oh, Sung Woo Kim, N. Kim, Yoon-Seok Choi, K. Lee, B. Kim, Nam Ik Cho, Dong-Won Kim, D. Park, B.-I. Ryu	2006	11
14	Analysis on data retention time of nano-scale DRAM and its prediction by indirectly probing the tail cell leakage current W.-S. Lee, S.-H. Lee, C.-S. Lee, K.-H. Lee, H.-J. Kim, J.-Y. Kim, Wonyoung Yang, Y.-K. Park, Jeong-Taek Kong, B.-I. Ryu	2005	5
15	Technology Breakthrough of Body-Tied FinFET for sub 50 nm NOR Flash Memory Eunyoung Cho, T.-Y. Kim, Byungjin Cho, Czang-Ho Lee, Jungho Lee, Albert Fayrushin, Changhee Lee, D. Park, B.-I. Ryu	2006	5
16	A Novel Multi-Functional Silicon-On-ONO (SOONO) MOSFETs for SoC Applications: Electrical Characterization for High Performance Transistor and Embedded Memory Applications Changsuk Oh, S. Kim, N. Kim, Yongsuk Choi, Y. Lee, Wen-Yueh Jang, H. Lee, H. Park, D.-W. Kim, D. Park, B.-I. Ryu	2006	5
17	Noble High Density Probe Memory using Ferroelectric Media beyond Sub-10 nm Generation Dong Chul Yoo, C.M. Lee, B.J. Bae, I.S. Kim, Jungang Heo, D.H. Im, Shin-Beom Choi, S.O. Park, H.S. Kim, U‐In Chung, Joo Tae Moon, B.-I. Ryu, D.J. Kim, Tae Won Noh	2006	0
18	Analysis of DRAM Standby Current Failure due to Hot Electron Induced Punch-through (HEIP) of PMOS transistor Proceedings - International Symposium for Testing and Failure Analysis ·M. H. Cho, Y. I. Kim, Jung-Hwan Choi, D. S. Woo, K. P. Lee, Y. J. Park, W. S. Lee, B.-I. Ryu	2005	0

About B.-I. Ryu

B.-I. Ryu is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications, Materials Chemistry, Polymers and Plastics and Electronic, Optical and Magnetic Materials, having authored 18 papers that have together received 1.1k indexed citations. Recurring topics across this work include Semiconductor materials and devices (11 papers), Advanced Memory and Neural Computing (6 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers), Advanced Data Storage Technologies (4 papers), Ferroelectric and Negative Capacitance Devices (3 papers), Integrated Circuits and Semiconductor Failure Analysis (3 papers), Electronic and Structural Properties of Oxides (2 papers) and Transition Metal Oxide Nanomaterials (2 papers). The work is most often cited by research in Polymers and Plastics (372 citations), Electrical and Electronic Engineering (1.1k citations), Materials Chemistry (444 citations), Cellular and Molecular Neuroscience (140 citations) and Electronic, Optical and Magnetic Materials (81 citations). B.-I. Ryu has collaborated with scholars based in South Korea. Frequent co-authors include U‐In Chung, J.T. Moon, Seung‐Eon Ahn, Myoung‐Jae Lee, Eun-Soon Yim, In-Hwan Baek, Sunae Seo, In Kyeong Yoo, Bae Ho Park and Dongseok Suh. Their work appears in journals such as Applied Physics Letters and Proceedings - International Symposium for Testing and Failure Analysis.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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