Burt Fowler

1.6k citations

68 papers · 1.3k indexed · h-index 22

Cellular and Molecular Neuroscience top 5%
- Neuroscience and Neural Engineering 11
Electrical and Electronic Engineering top 5%
- Advanced Memory and Neural Computing 46
- Ferroelectric and Negative Capacitance Devices 38
- Semiconductor materials and devices 14
- Thin-Film Transistor Technologies 10
- Silicon and Solar Cell Technologies 8
Polymers and Plastics top 5%
Materials Chemistry
- Electronic and Structural Properties of Oxides 16
- Silicon Nanostructures and Photoluminescence 9
Cognitive Neuroscience

Co-authors: Yao‐Feng Chang Jack C. Lee Ying‐Chen Chen Fei Zhou Fei Xue Yanzhen Wang Yen‐Ting Chen Ting‐Chang Chang
Cited by: Cellular and Molecular Neuroscience Electrical and Electronic Engineering Polymers and Plastics
Journals: Applied Physics Letters (12 papers)Journal of Applied Physics (4 papers)Scientific Reports (2 papers)
Partner nations: United States Taiwan China

In The Last Decade

Burt Fowler

63 papers receiving 1.3k citations

Peers

Countries citing papers authored by Burt Fowler

Since Specialization

Citations

This map shows the geographic impact of Burt Fowler's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Burt Fowler with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Burt Fowler more than expected).

Fields of papers citing papers by Burt Fowler

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Burt Fowler. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Burt Fowler. The network helps show where Burt Fowler may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Burt Fowler, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Burt Fowler Line = papers co-authored together Burt Fowler links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application Scientific Reports ·Ying‐Chen Chen,Pan Chuanjiang,Raquel Vásquez,Chih‐Yang Lin,Burt Fowler,Jack Lee	2019	39
2	Beyond SiO_x: an active electronics resurgence and biomimetic reactive oxygen species production and regulation from mitochondria Journal of Materials Chemistry C ·Yao‐Feng Chang,Burt Fowler,Ying‐Chen Chen,Chih-Yang Lin,Gaobo Xu,Hui‐Chun Huang,Jia Chen,Sungjun Kim,Yi Li,Jack C. Lee	2018	9
3	Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications Nanoscale ·Ying‐Chen Chen,Raquel Vásquez,Mirna Sagche,Burt Fowler,Hui‐Chun Huang,Pan Chuanjiang,Sungjun Kim,Yao‐Feng Chang,Jack C. Lee	2018	29
4	Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application Journal of Physics D Applied Physics ·Ying‐Chen Chen,Chih-Yang Lin,Hui‐Chun Huang,Sungjun Kim,Burt Fowler,Yao‐Feng Chang,Xiaohan Wu,Gaobo Xu,Ting‐Chang Chang,Jack C. Lee	2017	22
5	Dynamic conductance characteristics in HfO_x-based resistive random access memory RSC Advances ·Ying‐Chen Chen,Yao‐Feng Chang,Xiaohan Wu,Fei Zhou,Henrik Gutte Borgwardt,Chih-Yang Lin,Cheng‐Chih Hsieh,Burt Fowler,Ting‐Chang Chang,Jack C. Lee	2017	32
6	Resistive switching characteristics and mechanisms in silicon oxide memory devices Physical Sciences Reviews ·Yao‐Feng Chang,Burt Fowler,Ying‐Chen Chen,Fei Zhou,Xiaohan Wu,Yen‐Ting Chen,Yanzhen Wang,Fei Xue,Jack C. Lee	2016	1
7	A synaptic device built in one diode–one resistor (1D–1R) architecture with intrinsic SiO _x -based resistive switching memory Physical Sciences Reviews ·Yao‐Feng Chang,Burt Fowler,Ying‐Chen Chen,Fei Zhou,Chih-Hung Pan,Kuan‐Chang Chang,Tsung‐Ming Tsai,Ting‐Chang Chang,Simon M. Sze,Jack C. Lee	2016	1
8	Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide Scientific Reports ·Yao‐Feng Chang,Burt Fowler,Ying‐Chen Chen,Fei Zhou,Isabella Linder,Ting‐Chang Chang,Jack C. Lee	2016	74
9	Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics in AC frequency response and low voltage ( 2V) operation Ying‐Chen Chen,Yao‐Feng Chang,Burt Fowler,Fei Zhou,Xiaohan Wu,Cheng‐Chih Hsieh,Vahdi Alanya,Chih-Hung Pan,Min-Chen Chen,Kuan‐Chang Chang,Tsung‐Ming Tsai,Ting‐Chang Chang,Jack C. Lee	2016	1
10	Comprehensive study of intrinsic unipolar SiO<inf>x</inf>-based ReRAM characteristics and resistive switching mechanism in TiW/SiO<inf>x</inf>/TiW structure Yao‐Feng Chang,Burt Fowler,Fei Zhou,Volodymyr Poddubny,J. C. Lee	2015	2
11	Electroforming and resistive switching in silicon dioxide resistive memory devices RSC Advances ·Burt Fowler,Yao‐Feng Chang,Fei Zhou,Yanzhen Wang,Ditha Sandyprihati,Fei Xue,Yen‐Ting Chen,Dongguk Ko,Scott Pozder,Jack C. Lee	2015	58
12	High-density nano-pillar SiO<inf>x</inf>-based resistive switching memory using nano-sphere lithography to fabricate a one diode - one resistor (1D-1R) architecture Yao‐Feng Chang,Ji Li,Stephen D. Wilson,Fei Zhou,Tsung‐Ming Tsai,Kuan‐Chang Chang,Zainab Azizah,Tien‐Chun Chang,Burt Fowler,Edward T. Yu,J. C. Lee	2014	1
13	Comprehensive trap-level study in SiO<inf>x</inf>-based resistive switching memory Yao‐Feng Chang,Ying‐Chen Chen,Ji Li,Fei Xue,Yanzhen Wang,Fei Zhou,Burt Fowler,Jack C. Lee	2013	6
14	Study of ambient effect in active SiO<inf>x</inf>-based resistive switching memory Yao‐Feng Chang,L Grigoletto,Burt Fowler,Guy Somberg,Fei Xue,Y. Wang,Fei Zhou,J. C. Lee	2013	3
15	Reduced Electroforming Voltage and Enhanced Programming Stability in Resistive Switching of SiO2 Thin Films ECS Solid State Letters ·Yen‐Ting Chen,Burt Fowler,Yao‐Feng Chang,Y. Wang,Fei Xue,Fei Zhou,J. C. Lee	2013	6
16	Tristate Operation in Resistive Switching of $ \hbox{SiO}_{2}$ Thin Films IEEE Electron Device Letters ·Yen‐Ting Chen,Burt Fowler,Yanzhen Wang,Fei Xue,Fei Zhou,Yao‐Feng Chang,Pai-Yu Chen,王福田	2012	24
17	Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory Journal of Applied Physics ·Yao‐Feng Chang,Pai-Yu Chen,Burt Fowler,Yen‐Ting Chen,Fei Xue,Yanzhen Wang,Fei Zhou,Jack C. Lee	2012	73
18	Diffraction-capable microfluidic crystallization chips for screening and structure determination Acta Crystallographica Section A Foundations of Crystallography ·Andrew F. May,Burt Fowler,Kenneth A. Frankel,G. Meigs,James M. Holton	2008	1
19	The measurement of sub-micron epitaxial layer thickness and free carrier concentration by infrared reflectance spectroscopy. Burt Fowler,David G. Simmons,Ronald A. Carpio,Mohammad Ryiad Al-Eiadeh,P.R. Solomon,Vasily Ivanovich Sapozhnikov	1994	3
20	ArF Excimer Laser‐Enhanced Photochemical Vapor Deposition of Homoepitaxial Silicon from Disilane Journal of The Electrochemical Society ·Burt Fowler,Alif Imanuddin Alif,Sitaraman Krishnan,Jelena Niškanović,Yulia Eka Praptiningsih,S. Banerjee	1992	1

About Burt Fowler

Burt Fowler is a scholar working on Electrical and Electronic Engineering, Cellular and Molecular Neuroscience, Materials Chemistry, Polymers and Plastics and Electronic, Optical and Magnetic Materials, having authored 68 papers that have together received 1.3k indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (46 papers), Ferroelectric and Negative Capacitance Devices (38 papers), Electronic and Structural Properties of Oxides (16 papers), Semiconductor materials and devices (14 papers), Neuroscience and Neural Engineering (11 papers), Thin-Film Transistor Technologies (10 papers), Silicon Nanostructures and Photoluminescence (9 papers) and Silicon and Solar Cell Technologies (8 papers). The work is most often cited by research in Cellular and Molecular Neuroscience (448 citations), Electrical and Electronic Engineering (1.3k citations), Polymers and Plastics (242 citations), Materials Chemistry (301 citations) and Cognitive Neuroscience (76 citations). Burt Fowler has collaborated with scholars based in United States, Taiwan and China. Frequent co-authors include Yao‐Feng Chang, Jack C. Lee, Ying‐Chen Chen, Fei Zhou, Fei Xue, Yanzhen Wang, Yen‐Ting Chen, Ting‐Chang Chang, Fei Zhou and Chih-Yang Lin. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Scientific Reports, RSC Advances and Journal of The Electrochemical Society.

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