J.M. Sung

463 total citations
21 papers, 308 citations indexed

About

J.M. Sung is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J.M. Sung has authored 21 papers receiving a total of 308 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 4 papers in Materials Chemistry and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J.M. Sung's work include Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). J.M. Sung is often cited by papers focused on Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). J.M. Sung collaborates with scholars based in United States, Taiwan and Finland. J.M. Sung's co-authors include C.-Y. Lu, S. A. Lyon, S.J. Hillenius, L. Manchanda, T. E. Smith, H.C. Kirsch, M.D. Morris, Chun‐An Lu, T. T. Sheng and Behzad Razavi and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

J.M. Sung

19 papers receiving 293 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J.M. Sung United States 8 308 47 42 31 6 21 308
F.N. Cubaynes Belgium 9 369 1.2× 48 1.0× 34 0.8× 60 1.9× 10 1.7× 26 388
Masakazu Shimaya Japan 9 347 1.1× 58 1.2× 37 0.9× 12 0.4× 7 1.2× 30 353
H. Dansas France 7 277 0.9× 50 1.1× 75 1.8× 56 1.8× 6 1.0× 12 293
S. Ogura United States 9 565 1.8× 24 0.5× 42 1.0× 58 1.9× 13 2.2× 27 577
S. Locorotondo Belgium 10 266 0.9× 33 0.7× 51 1.2× 51 1.6× 6 1.0× 19 269
R. Schreutelkamp Belgium 10 257 0.8× 41 0.9× 39 0.9× 51 1.6× 6 1.0× 31 276
C. T. Kemmerer United States 7 265 0.9× 47 1.0× 86 2.0× 12 0.4× 6 1.0× 12 279
A. Acovic United States 11 402 1.3× 41 0.9× 45 1.1× 31 1.0× 2 0.3× 35 411
F. Leplingard Germany 12 278 0.9× 48 1.0× 84 2.0× 16 0.5× 4 0.7× 45 313
R. Palla France 8 234 0.8× 22 0.5× 39 0.9× 58 1.9× 4 0.7× 15 240

Countries citing papers authored by J.M. Sung

Since Specialization
Citations

This map shows the geographic impact of J.M. Sung's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.M. Sung with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.M. Sung more than expected).

Fields of papers citing papers by J.M. Sung

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.M. Sung. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.M. Sung. The network helps show where J.M. Sung may publish in the future.

Co-authorship network of co-authors of J.M. Sung

This figure shows the co-authorship network connecting the top 25 collaborators of J.M. Sung. A scholar is included among the top collaborators of J.M. Sung based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.M. Sung. J.M. Sung is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sung, J.M., et al.. (2003). Fluorine effect on boron diffusion of p/sup +/ gate devices (MOSFETs). 447–450. 2 indexed citations
2.
Chin, G.M., M.D. Morris, Dae‐Young Jeon, et al.. (2003). An ultra high speed ECL-bipolar CMOS technology with silicon fillet self-aligned contacts. 30–31. 1 indexed citations
3.
Sung, J.M., et al.. (2002). A 2.5-Gb/sec 15-mW BiCMOS clock recovery circuit. 1. 83–84. 2 indexed citations
4.
5.
Razavi, Behzad & J.M. Sung. (2002). A 6 GHz 60 mW BiCMOS phase-locked loop with 2 V supply. 114–115. 3 indexed citations
6.
7.
Chin, G.M., M.D. Morris, Dae‐Young Jeon, et al.. (2002). Performance optimization of a high speed super self-aligned BiCMOS technology. 297–300. 1 indexed citations
8.
Sung, J.M., et al.. (1995). A high performance super self-aligned 3 V/5 V BiCMOS technology with extremely low parasitics for low-power mixed-signal applications. IEEE Transactions on Electron Devices. 42(3). 513–522. 8 indexed citations
9.
King, C. A., et al.. (1995). Rapid Thermal Epitaxy for Device Applications. MRS Proceedings. 387.
10.
Chin, G.M., Dae‐Young Jeon, M.D. Morris, et al.. (1992). A Half-micron Super Self-aligned BiCMOS Technology for High Speed Applications. 17 indexed citations
11.
12.
Sung, J.M., et al.. (1991). The impact of poly-removal techniques on thin thermal oxide property in poly-buffer LOCOS technology. IEEE Transactions on Electron Devices. 38(8). 1970–1973. 1 indexed citations
13.
Sung, J.M., et al.. (1990). Reverse L-shape sealed poly-buffer LOCOS technology. IEEE Electron Device Letters. 11(11). 549–551. 15 indexed citations
14.
Sung, J.M., et al.. (1990). Crab‐Eye Formation in Poly‐Buffer LOCOS Isolation Technology. Journal of The Electrochemical Society. 137(7). 2350–2351. 1 indexed citations
15.
Lu, C.-Y., J.M. Sung, H.C. Kirsch, et al.. (1989). Anomalous C-V characteristics of implanted poly MOS structure in n/sup +//p/sup +/ dual-gate CMOS technology. IEEE Electron Device Letters. 10(5). 192–194. 62 indexed citations
16.
Lu, C.-Y. & J.M. Sung. (1989). Negative charge induced degradation of PMOSFETS with BF 2 -implanted p + -poly gate. Electronics Letters. 25(25). 1685–1687. 6 indexed citations
17.
Lu, C.-Y. & J.M. Sung. (1989). Reverse short-channel effects on threshold voltage in submicrometer salicide devices. IEEE Electron Device Letters. 10(10). 446–448. 62 indexed citations
18.
Sung, J.M., et al.. (1988). Relationship between hole trapping and interface state generation in metal-oxide-silicon structures. Applied Physics Letters. 52(17). 1431–1433. 85 indexed citations
19.
20.
Sung, J.M. & S. A. Lyon. (1987). Cycling of defects between trapped negative charge and interface states at the Si-SiO2 interface. Applied Physics Letters. 50(17). 1152–1154. 24 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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