A. Shanware

1.8k total citations
25 papers, 1.5k citations indexed

About

A. Shanware is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, A. Shanware has authored 25 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 5 papers in Electronic, Optical and Magnetic Materials and 4 papers in Materials Chemistry. Recurrent topics in A. Shanware's work include Semiconductor materials and devices (25 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Integrated Circuits and Semiconductor Failure Analysis (12 papers). A. Shanware is often cited by papers focused on Semiconductor materials and devices (25 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Integrated Circuits and Semiconductor Failure Analysis (12 papers). A. Shanware collaborates with scholars based in United States. A. Shanware's co-authors include J. W. McPherson, H. C. Mogul, Luigi Colombo, M. R. Visokay, James J. Chambers, Antonio Rotondaro, R. Khamankar, Jin‐Young Kim, J. Rodriguez and J. Antonio Travieso-Rodríguez and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

A. Shanware

25 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Shanware United States 13 1.3k 530 217 188 105 25 1.5k
Hag‐Ju Cho South Korea 22 1.3k 1.0× 918 1.7× 183 0.8× 211 1.1× 100 1.0× 46 1.5k
Joseph Ya‐min Lee Taiwan 20 872 0.7× 730 1.4× 242 1.1× 175 0.9× 138 1.3× 55 1.1k
S. Jakschik Germany 14 772 0.6× 353 0.7× 108 0.5× 64 0.3× 117 1.1× 39 866
Koeng Su Lim South Korea 23 1.4k 1.1× 1.1k 2.1× 131 0.6× 144 0.8× 160 1.5× 104 1.5k
Kandabara Tapily United States 16 1.1k 0.9× 654 1.2× 111 0.5× 107 0.6× 82 0.8× 79 1.2k
Shin’ichiro Kimura Japan 19 980 0.8× 462 0.9× 185 0.9× 111 0.6× 97 0.9× 47 1.1k
Keith Fogel United States 20 1.0k 0.8× 425 0.8× 81 0.4× 434 2.3× 217 2.1× 50 1.3k
R. Jammy United States 23 1.8k 1.4× 622 1.2× 168 0.8× 303 1.6× 240 2.3× 122 2.0k
Sandip Mondal India 18 657 0.5× 483 0.9× 169 0.8× 87 0.5× 101 1.0× 49 968
S. Blonkowski France 18 707 0.6× 347 0.7× 145 0.7× 86 0.5× 105 1.0× 53 802

Countries citing papers authored by A. Shanware

Since Specialization
Citations

This map shows the geographic impact of A. Shanware's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Shanware with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Shanware more than expected).

Fields of papers citing papers by A. Shanware

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Shanware. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Shanware. The network helps show where A. Shanware may publish in the future.

Co-authorship network of co-authors of A. Shanware

This figure shows the co-authorship network connecting the top 25 collaborators of A. Shanware. A scholar is included among the top collaborators of A. Shanware based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Shanware. A. Shanware is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Rahman, Mohammad Shahriar, et al.. (2009). Hot-Carrier- and Constant-Voltage-Stress-Induced Low-Frequency Noise in Nitrided High- $k$ Dielectric MOSFETs. IEEE Transactions on Device and Materials Reliability. 9(2). 203–208. 3 indexed citations
2.
Rahman, Mohammad Shahriar, et al.. (2008). Effect of nitrogen incorporation on 1/f noise performance of metal-oxide-semiconductor field effect transistors with HfSiON dielectric. Journal of Applied Physics. 103(3). 10 indexed citations
3.
Rahman, Mohammad Shahriar, et al.. (2007). Effect of Nitrogen Incorporation Methods on 1/f Noise and Mobility Characteristics in HfSiON NMOSFETs. AIP conference proceedings. 922. 25–28. 1 indexed citations
4.
Rahman, Mohammad Shahriar, Zeynep Çelik‐Butler, Hsing‐Huang Tseng, et al.. (2007). A new model for 1/f noise in high-κ MOSFETs. 561–564. 12 indexed citations
5.
Çelik‐Butler, Zeynep, A. Shanware, Keith Green, et al.. (2007). Physics-based 1/f noise model for MOSFETs with nitrided high-κ gate dielectrics. Solid-State Electronics. 52(5). 711–724. 22 indexed citations
6.
Shanware, A., et al.. (2006). Impact of interfacial layer on low-frequency noise of HfSiON dielectric MOSFETs. IEEE Transactions on Electron Devices. 53(6). 1459–1466. 22 indexed citations
7.
Liu, Yang, A. Shanware, Luigi Colombo, & R.W. Dutton. (2006). Modeling of charge trapping induced threshold-voltage instability in high-/spl kappa/ gate dielectric FETs. IEEE Electron Device Letters. 27(6). 489–491. 17 indexed citations
8.
Çelik‐Butler, Zeynep, et al.. (2005). Low-frequency noise characteristics of HfSiON gate-dielectric metal-oxide-semiconductor-field-effect transistors. Applied Physics Letters. 86(8). 27 indexed citations
9.
Shanware, A., et al.. (2005). Flicker noise in nitrided high-k dielectric NMOS transistors. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5844. 31–31. 3 indexed citations
10.
Quevedo-López, Manuel, James J. Chambers, M. R. Visokay, A. Shanware, & Luigi Colombo. (2005). Thermal stability of hafnium–silicate and plasma-nitrided hafnium silicate films studied by Fourier transform infrared spectroscopy. Applied Physics Letters. 87(1). 31 indexed citations
11.
McPherson, J. W., et al.. (2003). Proposed universal relationship between dielectric breakdown and dielectric constant. 633–636. 79 indexed citations
12.
McPherson, J. W., Jin‐Young Kim, A. Shanware, H. C. Mogul, & J. Rodriguez. (2003). Trends in the ultimate breakdown strength of high dielectric-constant materials. IEEE Transactions on Electron Devices. 50(8). 1771–1778. 300 indexed citations
13.
14.
Shanware, A., M. R. Visokay, Antonio Rotondaro, et al.. (2003). Evaluation of the positive biased temperature stress stability in HfSiON gate dielectrics. 208–213. 20 indexed citations
15.
McPherson, J. W., et al.. (2003). Thermochemical description of dielectric breakdown in high dielectric constant materials. Applied Physics Letters. 82(13). 2121–2123. 327 indexed citations
16.
Shanware, A., J. W. McPherson, M. R. Visokay, et al.. (2002). Reliability evaluation of HfSiON gate dielectric film with 12.8 Å SiO/sub 2/ equivalent thickness. 6.6.1–6.6.4. 9 indexed citations
17.
Visokay, M. R., James J. Chambers, Antonio Rotondaro, A. Shanware, & Luigi Colombo. (2002). Application of HfSiON as a gate dielectric material. Applied Physics Letters. 80(17). 3183–3185. 311 indexed citations
18.
McPherson, J. W., R. Khamankar, & A. Shanware. (2000). A complementary molecular-model (including field and current) for TDDB in SiO 2 dielectrics. Microelectronics Reliability. 40(8-10). 1591–1597. 10 indexed citations
19.
20.
Shanware, A., Hisham Z. Massoud, Eric M. Vogel, et al.. (1999). Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and dielectrics with oxide scaling. Microelectronic Engineering. 48(1-4). 295–298. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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