P.A. Stolk

4.4k citations

88 papers · 3.4k indexed · 2 hit papers · h-index 26

Impact in

Electrical and Electronic Engineering top 1%
- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
Atomic and Molecular Physics, and Optics top 2%
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 87
- Silicon and Solar Cell Technologies 55
- Semiconductor materials and devices 37
- Integrated Circuits and Semiconductor Failure Analysis 35
- Advancements in Semiconductor Devices and Circuit Design 30
- Thin-Film Transistor Technologies 22
Atomic and Molecular Physics, and Optics 24
- Semiconductor materials and interfaces 24

Co-authors: J. M. Poate D. J. Eaglesham H.‐J. Gossmann D.B.M. Klaassen F. Widdershoven D. C. Jacobson H.-J. Gossmann T. E. Haynes
Journals: Applied Physics Letters (13 papers)Journal of Applied Physics (7 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (4 papers)IEEE Transactions on Electron Devices (3 papers)Materials Science in Semiconductor Processing (3 papers)
Partner nations: Netherlands United States France

In The Last Decade

P.A. Stolk

86 papers receiving 3.2k citations

Hit Papers

align trajectories log scale

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon 1997 · 496 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

1997 Journal of Applied Physics
1994 Applied Physics Letters

Peers

Countries citing papers authored by P.A. Stolk

Since Specialization

Citations

This map shows the geographic impact of P.A. Stolk's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.A. Stolk with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.A. Stolk more than expected).

Fields of papers citing papers by P.A. Stolk

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.A. Stolk. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.A. Stolk. The network helps show where P.A. Stolk may publish in the future.

Co-authors

The 25 scholars most cited alongside P.A. Stolk, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P.A. Stolk Line = papers co-authored together P.A. Stolk links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	New hole trapping characterization during NBTI in 65nm node technology with distinct nitridation processing M. Denais, A. Bravaix, V. Huard, C. Parthasarathy, M. Bidaud, G. Ribes, D. Barge, Ureña Sanmartín, B. Tavel, Mengying Cheng, F. Perrier, N. Revil, F. Arnaud, P.A. Stolk	2005	7
2	Ultra-low cost and high performance 65nm CMOS device fabricated with plasma doping Huizai Yao, B. Duriez, A. Grouillet, F. Arnaud, B. Tavel, F. Wacquant, P.A. Stolk, Mr.Amit kumar yadav, I Wayan Gde Wredhira Wirartama, G Reimer, Yongmin Zhang, Soma Aryana, H. Hausdorf, D. Lenoble	2004	10
3	Examination of the Si(111)-SiO[sub 2], Si(110)-SiO[sub 2], and Si(100)-SiO[sub 2] Interfacial Properties Following Rapid Thermal Annealing Journal of The Electrochemical Society ·Paul K. Hurley, B. J. O’Sullivan, F.N. Cubaynes, P.A. Stolk, F. Widdershoven, Jhuma Das	2002	32
4	Making 50 nm transistors with 248 nm lithography P.A. Stolk, Peter Dirksen, 関根真理子, Seung Hyun Yi, A.H. Montree, Talley Rl, Ping Ping Tsai, YD Kim, M. Kaiser, Febri Pratama, C.J. van der Poel	2002	1
5	The effect of statistical dopant fluctuations on MOS device performance P.A. Stolk, D.B.M. Klaassen	2002	43
6	Ultra-shallow junction formation by outdiffusion from implanted oxide TU/e Research Portal ·Jurriaan Schmitz, Fathurrahman Fathurrahman, P.A. Stolk, Y.V. Ponomarev, F. Roozeboom, J. G. M. van Berkum, P. C. Zalm, P.H. Woerlee	2002	3
7	Gate-workfunction engineering using poly-(Si,Ge) for high-performance 0.18 μm CMOS technology University of Twente Research Information ·Y.V. Ponomarev, Cora Salm, Jurriaan Schmitz, P.H. Woerlee, P.A. Stolk, D. J. Gravesteijn	2002	7
8	Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon Applied Physics Letters ·Giovanni Mannino, P.A. Stolk, N. E. B. Cowern, W.B. de Boer, A.G. Dirks, F. Roozeboom, J. G. M. van Berkum, P.H. Woerlee, Nguyen Ngoc Toan	2001	19
9	2D dopant profiling of advanced CMOS technologies by preferential etching, comparison with 2D process simulations C. Dachs, Marcel A. Verheijen, M. Kaiser, P.A. Stolk, Y.V. Ponomarev	2000	1
10	An efficient lateral channel profiling of poly-SiGe-gated PMOSFET's for 0.1 /spl mu/m CMOS low-voltage applications University of Twente Research Information ·Y.V. Ponomarev, P.A. Stolk, Raimundo de Barros Araújo Júnior, C. Dachs, M. Kaiser, A.H. Montree, Seung Hyun Yi, Jurriaan Schmitz, P.H. Woerlee	1999	3
11	Gate Workfunction Engineering for Deep Submicron CMOS European Solid-State Device Research Conference ·C. Dachs, Y.V. Ponomarev, P.A. Stolk, A.H. Montree	1999	3
12	Dopant profile engineering of advanced Si MOSFET’s using ion implantation Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·P.A. Stolk, Y.V. Ponomarev, Jurriaan Schmitz, Raimundo de Barros Araújo Júnior, Seung Hyun Yi, A.H. Montree, P.H. Woerlee	1999	3
13	Ostwald Ripening of {113} Defects Precursors and Transient Enhanced Diffusion MRS Proceedings ·Giovanni Mannino, И. И. Дубовой, P.A. Stolk, F. Roozeboom, H.G.A. Huizing, Charles H. Adair, R. Belda Carrasco, F. Cristiano, A. Claverie, M. Jaraı́z	1999	3
14	Modeling statistical dopant fluctuations in MOS transistors IEEE Transactions on Electron Devices ·P.A. Stolk, F. Widdershoven, D.B.M. Klaassen	1998	314
15	Transient enhanced diffusion of Sb and B due to MeV silicon implants Applied Physics Letters ·D. J. Eaglesham, T. E. Haynes, H.‐J. Gossmann, D. C. Jacobson, P.A. Stolk, J. M. Poate	1997	37
16	Iron gettering mechanisms in silicon Journal of Applied Physics ·J. L. Benton, P.A. Stolk, D. J. Eaglesham, D. C. Jacobson, Jay Cheng, J. M. Poate, Nguyễn Thị Thanh Hà, T. E. Haynes, S. M. Myers	1996	51
17	Properties of Point-Defects in Si for Process Modeling MRS Proceedings ·H.‐J. Gossmann, C.S. Rafferty, P.A. Stolk, D. J. Eaglesham, George H. Gilmer, J. M. Poate, H.-H. Vuong, 哲三星, Michael O. Thompson	1995	3
18	Characterization of amorphous silicon AIP conference proceedings ·Rudi A. Hakvoort, A. van Veen, H. Schut, M. J. van den Boogaard, A. J. M. Berntsen, S. Roorda, P.A. Stolk, A. H. Reader	1994	12
19	Separating the Contributions of Hydrogen and Structural Relaxation to Damage Annealing in a-Si:H MRS Proceedings ·P.A. Stolk, A. J. M. Berntsen, F.W. Saris, W. F. van der Weg	1993	3
20	Pulsed-laser crystallization of amorphous silicon layers buried in a crystalline matrix Journal of Applied Physics ·Albert Polman, P.A. Stolk, D.J.W. Mous, W.C. Sinke, C. W. T. Bulle‐Lieuwma, D. E. W. Vandenhoudt	1990	16

About P.A. Stolk

P.A. Stolk is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Computational Mechanics, Materials Chemistry and Ceramics and Composites, having authored 88 papers that have together received 3.4k indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (55 papers), Semiconductor materials and devices (37 papers), Integrated Circuits and Semiconductor Failure Analysis (35 papers), Advancements in Semiconductor Devices and Circuit Design (30 papers), Semiconductor materials and interfaces (24 papers), Thin-Film Transistor Technologies (22 papers), Ion-surface interactions and analysis (13 papers) and Silicon Nanostructures and Photoluminescence (8 papers). The work is most often cited by research in Electrical and Electronic Engineering (3.1k citations), Atomic and Molecular Physics, and Optics (1.3k citations), Computational Mechanics (785 citations), Materials Chemistry (643 citations) and Ceramics and Composites (72 citations). P.A. Stolk has collaborated with scholars based in Netherlands, United States and France. Frequent co-authors include J. M. Poate, D. J. Eaglesham, H.‐J. Gossmann, D.B.M. Klaassen, F. Widdershoven, D. C. Jacobson, H.-J. Gossmann, T. E. Haynes, M. Jaraı́z and H. S. Luftman. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, IEEE Transactions on Electron Devices and Materials Science in Semiconductor Processing.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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