P.A. Clifton

519 total citations
23 papers, 413 citations indexed

About

P.A. Clifton is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, P.A. Clifton has authored 23 papers receiving a total of 413 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 4 papers in Materials Chemistry. Recurrent topics in P.A. Clifton's work include Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Chalcogenide Semiconductor Thin Films (7 papers). P.A. Clifton is often cited by papers focused on Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Chalcogenide Semiconductor Thin Films (7 papers). P.A. Clifton collaborates with scholars based in United Kingdom, United States and Belgium. P.A. Clifton's co-authors include Daniel Connelly, D. E. Grupp, C. Faulkner, Sharad Saxena, M. Ershov, S. Minehane, Andrei Shibkov, J.A. Babcock, A.W. Brinkman and Paul D. Brown and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

P.A. Clifton

20 papers receiving 394 citations

Peers

P.A. Clifton

EEE

AMPO

K.G. Anil Belgium

Kong-Beng Thei Taiwan

J.P. Colinge Belgium

Reinaldo A. Vega United States

Vladimir Machkaoutsan Belgium

C. Kerner Belgium

S. Brus Belgium

Ruqi Han China

Wei Yip Loh Singapore

Antonios Bazigos Switzerland

K.G. Anil Belgium

P.A. Clifton

437 ×1.1

EEE

141 ×0.8

AMPO

38 ×0.6

52 ×1.6

11 ×1.4

Citations per year, relative to P.A. Clifton P.A. Clifton (= 1×) peers K.G. Anil

Countries citing papers authored by P.A. Clifton

Since Specialization

Citations

This map shows the geographic impact of P.A. Clifton's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.A. Clifton with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.A. Clifton more than expected).

Fields of papers citing papers by P.A. Clifton

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.A. Clifton. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.A. Clifton. The network helps show where P.A. Clifton may publish in the future.

Co-authorship network of co-authors of P.A. Clifton

This figure shows the co-authorship network connecting the top 25 collaborators of P.A. Clifton. A scholar is included among the top collaborators of P.A. Clifton based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P.A. Clifton. P.A. Clifton is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Yan, Yanfa, et al.. (2025). Traps characterization in RF SOI substrates including a buried SiGe layer. Solid-State Electronics. 226. 109103–109103.

Clifton, P.A., et al.. (2023). Reduction of Schottky barrier height and contact resistivity in metal contacts to n-type silicon by insertion of interfacial arsenic monolayers. Materials Science in Semiconductor Processing. 161. 107404–107404. 1 indexed citations

Clifton, P.A., Ryan Sporer, Rick Carter, et al.. (2019). Buried SiGe as a performance booster in n-channel FDSOI MOSFETs. Solid-State Electronics. 162. 107631–107631. 1 indexed citations

Harrison, Walter A., et al.. (2013). Effective-mass theory of metal-semiconductor contact resistivity. Applied Physics Letters. 103(8). 5 indexed citations

Connelly, Daniel & P.A. Clifton. (2010). Comments on “Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation”. IEEE Electron Device Letters. 31(5). 417–418. 12 indexed citations

Connelly, Daniel, et al.. (2008). Self-Aligned Low-Schottky Barrier Deposited Metal S/D MOSFETs with Si<inf>3</inf>N<inf>4</inf> M/Si Passivation. 83–84.

Connelly, Daniel & P.A. Clifton. (2008). Analysis of Schottky barriers to ultrathin strained Si. Journal of Applied Physics. 103(7). 8 indexed citations

Connelly, Daniel, C. Faulkner, P.A. Clifton, & D. E. Grupp. (2006). Fermi-level depinning for low-barrier Schottky source/drain transistors. Applied Physics Letters. 88(1). 132 indexed citations

Connelly, Daniel, C. Faulkner, P.A. Clifton, & D. E. Grupp. (2005). Improved short-channel FET performance with virtual extensions. IEEE Transactions on Electron Devices. 53(1). 146–152. 1 indexed citations

10.

Ershov, M., et al.. (2004). Degradation dynamics, recovery, and characterization of negative bias temperature instability. Microelectronics Reliability. 45(1). 99–105. 15 indexed citations

11.

Ershov, M., Sharad Saxena, Andrei Shibkov, et al.. (2003). Transient effects and characterization methodology of negative bias temperature instability in pMOS transistors. 606–607. 23 indexed citations

12.

Ershov, M., Sharad Saxena, S. Minehane, et al.. (2003). Dynamic recovery of negative bias temperature instability in p-type metal–oxide–semiconductor field-effect transistors. Applied Physics Letters. 83(8). 1647–1649. 135 indexed citations

13.

O’Neill, A.G., et al.. (1999). SiGe virtual substrate N-channel heterojunction MOSFETs. Semiconductor Science and Technology. 14(9). 784–789. 18 indexed citations

14.

Clifton, P.A., et al.. (1990). The epitaxial growth of mercury manganese telluride by MOVPE. Semiconductor Science and Technology. 5(10). 1067–1069. 8 indexed citations

15.

Mullins, J.T., P.A. Clifton, Paul D. Brown, A.W. Brinkman, & J. Woods. (1990). ZnTe and CdTe:ZnTe superlattices grown by MOVPE. Journal of Crystal Growth. 101(1-4). 100–104. 12 indexed citations

16.

Clifton, P.A., J.T. Mullins, Paul D. Brown, et al.. (1990). Growth of HgTe-ZnTe strained layer superlattices by MOVPE. Journal of Crystal Growth. 99(1-4). 468–472. 5 indexed citations

17.

Al-Allak, H. M., A.W. Brinkman, P.A. Clifton, & Paul D. Brown. (1990). The Epitaxial Growth by Movpe of (Hg,Mn)Te On (001) Gaas Substrates. MRS Proceedings. 216. 7 indexed citations

18.

Brown, Paul D., P.A. Clifton, J.T. Mullins, et al.. (1990). Tem Studies of CD:ZN:TE-Based II-VI Superlattices and Epitaxial Layers. MRS Proceedings. 216. 1 indexed citations

19.

Clifton, P.A., J.T. Mullins, Paul D. Brown, et al.. (1988). Growth and characterisation of ZnTe and ZnTeCdTe superlattices on GaAs substrates. Journal of Crystal Growth. 93(1-4). 726–731. 15 indexed citations

20.

Mullins, J.T., P.A. Clifton, G.J. Russell, A.W. Brinkman, & J. Woods. (1988). Electrical properties and surface effects in MOVPE grown (Hg,Cd)Te. Journal of Crystal Growth. 93(1-4). 755–760. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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