P.A. Clifton

519 citations

23 papers · 413 indexed · h-index 9

Co-authors: Daniel Connelly D. E. Grupp C. Faulkner Sharad Saxena M. Ershov S. Minehane Andrei Shibkov J.A. Babcock
Topics: Semiconductor materials and devices (13 papers)Advancements in Semiconductor Devices and Circuit Design (12 papers)Chalcogenide Semiconductor Thin Films (7 papers)
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Materials Chemistry
Journals: Applied Physics Letters Journal of Applied Physics IEEE Transactions on Electron Devices
Partner nations: United Kingdom United States Belgium

In The Last Decade

P.A. Clifton

20 papers receiving 394 citations

Peers

Countries citing papers authored by P.A. Clifton

Since Specialization

Citations

This map shows the geographic impact of P.A. Clifton's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.A. Clifton with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.A. Clifton more than expected).

Fields of papers citing papers by P.A. Clifton

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.A. Clifton. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.A. Clifton. The network helps show where P.A. Clifton may publish in the future.

Co-authorship network of co-authors of P.A. Clifton

This figure shows the co-authorship network connecting the top 25 collaborators of P.A. Clifton. A scholar is included among the top collaborators of P.A. Clifton based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P.A. Clifton. P.A. Clifton is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Traps characterization in RF SOI substrates including a buried SiGe layer 2025 ·Solid-State Electronics ·Yanfa Yan,Martin Rack,(unknown),(unknown),Alexander Goebel,P.A. Clifton,J.‐P. Raskin	0
2	Reduction of Schottky barrier height and contact resistivity in metal contacts to n-type silicon by insertion of interfacial arsenic monolayers 2023 ·Materials Science in Semiconductor Processing ·P.A. Clifton,(unknown),Walter A. Harrison	1
3	Buried SiGe as a performance booster in n-channel FDSOI MOSFETs 2019 ·Solid-State Electronics ·P.A. Clifton,(unknown),(unknown),(unknown),(unknown),Ryan Sporer,Rick Carter,J. Kluth,J. Schaeffer,Bich-Yen Nguyen,(unknown),Nicolas Daval,W. Schwarzenbach,(unknown),(unknown),(unknown)	1
4	Effective-mass theory of metal-semiconductor contact resistivity 2013 ·Applied Physics Letters ·Walter A. Harrison,(unknown),P.A. Clifton	5
5	Comments on “Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation” 2010 ·IEEE Electron Device Letters ·Daniel Connelly,P.A. Clifton	12
6	Self-Aligned Low-Schottky Barrier Deposited Metal S/D MOSFETs with Si<inf>3</inf>N<inf>4</inf> M/Si Passivation 2008 ·Daniel Connelly,P.A. Clifton,C. Faulkner,(unknown),(unknown)	0
7	Analysis of Schottky barriers to ultrathin strained Si 2008 ·Journal of Applied Physics ·Daniel Connelly,P.A. Clifton	8
8	Fermi-level depinning for low-barrier Schottky source/drain transistors 2006 ·Applied Physics Letters ·Daniel Connelly,C. Faulkner,P.A. Clifton,D. E. Grupp	132
9	Improved short-channel FET performance with virtual extensions 2005 ·IEEE Transactions on Electron Devices ·Daniel Connelly,C. Faulkner,P.A. Clifton,D. E. Grupp	1
10	Degradation dynamics, recovery, and characterization of negative bias temperature instability 2004 ·Microelectronics Reliability ·M. Ershov,Sharad Saxena,S. Minehane,P.A. Clifton,(unknown),(unknown),(unknown),Spencer Graves,(unknown)	15
11	Transient effects and characterization methodology of negative bias temperature instability in pMOS transistors 2003 ·M. Ershov,(unknown),Sharad Saxena,Andrei Shibkov,S. Minehane,J.A. Babcock,(unknown),(unknown),Takashi Yamashita,P.A. Clifton,(unknown)	23
12	Dynamic recovery of negative bias temperature instability in p-type metal–oxide–semiconductor field-effect transistors 2003 ·Applied Physics Letters ·M. Ershov,Sharad Saxena,(unknown),(unknown),S. Minehane,J.A. Babcock,(unknown),P.A. Clifton,(unknown),Andrei Shibkov	135
13	SiGe virtual substrate N-channel heterojunction MOSFETs 1999 ·Semiconductor Science and Technology ·A.G. O’Neill,(unknown),(unknown),P.A. Clifton,(unknown),J.F. Fernández,A. G. Cullis,A. Benedetti	18
14	The epitaxial growth of mercury manganese telluride by MOVPE 1990 ·Semiconductor Science and Technology ·P.A. Clifton,A.W. Brinkman,(unknown)	8
15	ZnTe and CdTe:ZnTe superlattices grown by MOVPE 1990 ·Journal of Crystal Growth ·J.T. Mullins,P.A. Clifton,Paul D. Brown,A.W. Brinkman,J. Woods	12
16	Growth of HgTe-ZnTe strained layer superlattices by MOVPE 1990 ·Journal of Crystal Growth ·P.A. Clifton,J.T. Mullins,Paul D. Brown,N. Lovergine,A.W. Brinkman,J. Woods	5
17	The Epitaxial Growth by Movpe of (Hg,Mn)Te On (001) Gaas Substrates 1990 ·MRS Proceedings ·H. M. Al-Allak,A.W. Brinkman,P.A. Clifton,Paul D. Brown	7
18	Tem Studies of CD:ZN:TE-Based II-VI Superlattices and Epitaxial Layers 1990 ·MRS Proceedings ·Paul D. Brown,(unknown),P.A. Clifton,J.T. Mullins,M. Y. Simmons,K. Durose,A.W. Brinkman,T. D. Golding,J. H. Dinan	1
19	Growth and characterisation of ZnTe and ZnTeCdTe superlattices on GaAs substrates 1988 ·Journal of Crystal Growth ·P.A. Clifton,J.T. Mullins,Paul D. Brown,G.J. Russell,A.W. Brinkman,J. Woods	15
20	Electrical properties and surface effects in MOVPE grown (Hg,Cd)Te 1988 ·Journal of Crystal Growth ·J.T. Mullins,P.A. Clifton,G.J. Russell,A.W. Brinkman,J. Woods	2

About P.A. Clifton

P.A. Clifton is a scholar working on Architecture, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, having authored 23 papers that have together received 413 indexed citations. Recurring topics across this work include Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Chalcogenide Semiconductor Thin Films (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (392 citations), Atomic and Molecular Physics, and Optics (169 citations) and Materials Chemistry (69 citations). P.A. Clifton has collaborated with scholars based in United Kingdom, United States and Belgium. Frequent co-authors include Daniel Connelly, D. E. Grupp, C. Faulkner, Sharad Saxena, M. Ershov, S. Minehane, Andrei Shibkov, J.A. Babcock, A.W. Brinkman and Paul D. Brown. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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