S. Marcus

445 total citations
18 papers, 361 citations indexed

About

S. Marcus is a scholar working on Electrical and Electronic Engineering, Mechanics of Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S. Marcus has authored 18 papers receiving a total of 361 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 5 papers in Mechanics of Materials and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S. Marcus's work include Semiconductor materials and devices (11 papers), Silicon and Solar Cell Technologies (7 papers) and Metal and Thin Film Mechanics (5 papers). S. Marcus is often cited by papers focused on Semiconductor materials and devices (11 papers), Silicon and Solar Cell Technologies (7 papers) and Metal and Thin Film Mechanics (5 papers). S. Marcus collaborates with scholars based in United States, Germany and Taiwan. S. Marcus's co-authors include Kai‐Erik Elers, Richard F. Foster, Tom Blomberg, Brad Aitchison, Suvi Haukka, Daniel F. Downey, Wilfried Lerch, Dongdong Gu, R. Gregory and Soumik Dey and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and Thin Solid Films.

In The Last Decade

S. Marcus

17 papers receiving 349 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S. Marcus United States	11	345	136	79	70	48	18	361
Kiichiro Mukai Japan	8	311 0.9×	109 0.8×	48 0.6×	93 1.3×	53 1.1×	20	348
J. Schaeffer United States	13	595 1.7×	189 1.4×	63 0.8×	69 1.0×	96 2.0×	32	628
Soon‐Cheon Seo United States	9	211 0.6×	81 0.6×	91 1.2×	142 2.0×	41 0.9×	17	269
C. Huffman United States	14	502 1.5×	203 1.5×	43 0.5×	66 0.9×	37 0.8×	38	581
M. El-Bouanani United States	12	484 1.4×	164 1.2×	39 0.5×	165 2.4×	121 2.5×	16	514
Grazia Litrico Italy	11	323 0.9×	104 0.8×	24 0.3×	80 1.1×	65 1.4×	41	384
M. Bude United States	4	392 1.1×	217 1.6×	19 0.2×	55 0.8×	42 0.9×	5	409
G. J. Leusink United States	8	342 1.0×	193 1.4×	22 0.3×	84 1.2×	60 1.3×	18	386
Masato Koyama Japan	10	312 0.9×	121 0.9×	22 0.3×	41 0.6×	57 1.2×	46	339
Tomo Ueno Japan	11	288 0.8×	217 1.6×	20 0.3×	61 0.9×	61 1.3×	36	358

Countries citing papers authored by S. Marcus

Since Specialization

Citations

This map shows the geographic impact of S. Marcus's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Marcus with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Marcus more than expected).

Fields of papers citing papers by S. Marcus

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Marcus. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Marcus. The network helps show where S. Marcus may publish in the future.

Co-authorship network of co-authors of S. Marcus

This figure shows the co-authorship network connecting the top 25 collaborators of S. Marcus. A scholar is included among the top collaborators of S. Marcus based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Marcus. S. Marcus is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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18 of 18 papers shown

Triyoso, Dina H., R. Gregory, J. Schaeffer, et al.. (2007). Atomic layer deposited TaCy metal gates: Impact on microstructure, electrical properties, and work function on HfO2 high-k dielectrics. Journal of Applied Physics. 102(10). 20 indexed citations

Gu, Diefeng, et al.. (2006). Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(5). 2230–2235. 12 indexed citations

Elers, Kai‐Erik, et al.. (2006). Film Uniformity in Atomic Layer Deposition. Chemical Vapor Deposition. 12(1). 13–24. 98 indexed citations

Elers, Kai‐Erik, et al.. (2005). TiCl[sub 4] as a Precursor in the TiN Deposition by ALD and PEALD. Journal of The Electrochemical Society. 152(8). G589–G589. 70 indexed citations

Dey, Soumik, Atanu Das, Dongdong Gu, et al.. (2004). Relationships among equivalent oxide thickness, nanochemistry, and nanostructure in atomic layer chemical-vapor-deposited Hf–O films on Si. Journal of Applied Physics. 95(9). 5042–5048. 24 indexed citations

Carpenter, R. W., et al.. (2003). Nanochemistry and Structure of Zr and Hf Based High Dielectric Constant Films. Microscopy and Microanalysis. 9(S02). 466–467. 2 indexed citations

Hou, Tuo‐Hung, S. Marcus, C. Werkhoven, et al.. (2003). Improved scalability of high-k gate dielectrics by using hf-aluminates.

Song, Sook‐Keun, et al.. (1999). Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N/sub 2/O oxidation of NH/sub 3/-nitrided Si. 137–138. 4 indexed citations

Song, Sook‐Keun, et al.. (1999). Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3-nitrided Si. Microelectronic Engineering. 48(1-4). 55–58. 13 indexed citations

10.

Marcus, S., et al.. (1999). Rapid Thermal Processing of Hydrogen Silsesquioxane for Low Dielectric Constant Performance. MRS Proceedings. 565. 3 indexed citations

11.

Lerch, W., et al.. (1999). Boron Ultrashallow Junction Formation in Silicon by Low‐Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient. Journal of The Electrochemical Society. 146(7). 2670–2678. 10 indexed citations

12.

Downey, Daniel F., et al.. (1999). Effects of “fast” rapid thermal anneals on sub-keV boron and BF2 ion implants. Journal of Electronic Materials. 28(12). 1340–1344. 20 indexed citations

13.

Marcus, S., et al.. (1998). RTP requirements to yield uniform and repeatable ultra-shallow junctions with low energy boron and BF2 ion implants. Journal of Electronic Materials. 27(12). 1291–1295. 6 indexed citations

14.

Downey, Daniel F., et al.. (1998). Optimization of RTA parameters to produce ultra-shallow, highly activated B+, BF 2 + , and As+ ion implanted junctions. Journal of Electronic Materials. 27(12). 1296–1314. 13 indexed citations

15.

Lerch, W., Michael Glück, N. A. Stolwijk, et al.. (1998). Simulation of Rapid Thermal Annealed Boron Ultra-Shallow Junctions in Inert and Oxidizing Ambient. MRS Proceedings. 525. 6 indexed citations

16.

Downey, Daniel F., et al.. (1998). The Effects of Small Concentrations of Oxygen in RTP Annealing of Low Energy Boron, BF² and Arsenic Ion Implants. MRS Proceedings. 525. 19 indexed citations

17.

Downey, Daniel F., et al.. (1997). Rapid Thermal Process Requirements for The Annealing of Ultra-Shallow Junctions. MRS Proceedings. 470. 5 indexed citations

18.

Marcus, S. & Richard F. Foster. (1993). Characterization of low pressure chemically vapor-deposited tungsten nitride films. Thin Solid Films. 236(1-2). 330–333. 36 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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