W. Schwarzenbach

1.1k total citations
55 papers, 564 citations indexed

About

W. Schwarzenbach is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, W. Schwarzenbach has authored 55 papers receiving a total of 564 indexed citations (citations by other indexed papers that have themselves been cited), including 53 papers in Electrical and Electronic Engineering, 7 papers in Atomic and Molecular Physics, and Optics and 5 papers in Biomedical Engineering. Recurrent topics in W. Schwarzenbach's work include Semiconductor materials and devices (34 papers), Advancements in Semiconductor Devices and Circuit Design (33 papers) and Integrated Circuits and Semiconductor Failure Analysis (18 papers). W. Schwarzenbach is often cited by papers focused on Semiconductor materials and devices (34 papers), Advancements in Semiconductor Devices and Circuit Design (33 papers) and Integrated Circuits and Semiconductor Failure Analysis (18 papers). W. Schwarzenbach collaborates with scholars based in France, Switzerland and United States. W. Schwarzenbach's co-authors include A.A. Howling, Ch. Hollenstein, C. Courteille, J.-L. Dorier, Jacques Derouard, N. Sadeghi, Ch. Hollenstein, S. Brunner, Bich-Yen Nguyen and Jean‐Paul Booth and has published in prestigious journals such as Journal of Applied Physics, Journal of Physics D Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

W. Schwarzenbach

47 papers receiving 536 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W. Schwarzenbach France 13 426 166 159 93 81 55 564
D. Magni Switzerland 5 292 0.7× 183 1.1× 135 0.8× 81 0.9× 88 1.1× 9 448
O. Leroy France 13 533 1.3× 283 1.7× 177 1.1× 170 1.8× 168 2.1× 24 701
Tamio Hara Japan 13 265 0.6× 141 0.8× 142 0.9× 145 1.6× 93 1.1× 70 500
C. Courteille France 11 289 0.7× 166 1.0× 234 1.5× 54 0.6× 44 0.5× 17 456
L. Gatilova France 15 422 1.0× 132 0.8× 80 0.5× 80 0.9× 175 2.2× 32 543
Khaled Hassouni France 14 274 0.6× 402 2.4× 130 0.8× 238 2.6× 193 2.4× 34 651
E. A. G. Hamers Netherlands 10 490 1.2× 329 2.0× 85 0.5× 62 0.7× 43 0.5× 25 549
Reetesh Kumar Gangwar India 15 334 0.8× 84 0.5× 236 1.5× 256 2.8× 196 2.4× 52 568
R. J. Severens Netherlands 13 424 1.0× 351 2.1× 68 0.4× 121 1.3× 41 0.5× 20 507
J. Laimer Austria 16 337 0.8× 270 1.6× 70 0.4× 282 3.0× 218 2.7× 48 604

Countries citing papers authored by W. Schwarzenbach

Since Specialization
Citations

This map shows the geographic impact of W. Schwarzenbach's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Schwarzenbach with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Schwarzenbach more than expected).

Fields of papers citing papers by W. Schwarzenbach

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Schwarzenbach. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Schwarzenbach. The network helps show where W. Schwarzenbach may publish in the future.

Co-authorship network of co-authors of W. Schwarzenbach

This figure shows the co-authorship network connecting the top 25 collaborators of W. Schwarzenbach. A scholar is included among the top collaborators of W. Schwarzenbach based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Schwarzenbach. W. Schwarzenbach is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Schwarzenbach, W., et al.. (2024). Crystal Originated Defect Monitoring and Reduction in Production Grade SmartSiC™ Engineered Substrates. Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum. 434. 81–85. 1 indexed citations
2.
Schwarzenbach, W., T. Barge, Alexandre Moulin, et al.. (2024). Poly-SiC Characterization and Properties for SmartSiC™. Materials science forum. 1124. 21–25.
3.
Simon, Roland B., et al.. (2024). Application of Advanced Characterization Techniques to SmartSiC™ Product for Substrate-Level Device Performance Optimization. Materials science forum. 1124. 27–34. 1 indexed citations
4.
Schwarzenbach, W., et al.. (2023). Tailored Polycrystalline Substrate for SmartSiC<sup>TM</sup> Substrates Enabling High Performance Power Devices. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 344. 47–52. 3 indexed citations
5.
Guiot, Eric, F. Allibert, J. Leib, et al.. (2023). Proven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device through the Use of SmartSiC<sup>TM</sup> Substrate. Materials science forum. 1092. 201–207. 3 indexed citations
6.
Shrestha, Ramesh, et al.. (2023). High Sensitivity Surface Defect Inspection of SiC and SmartSiC<sup>TM</sup> Substrates Using a DUV Laser-Based System. Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum. 425. 57–61. 3 indexed citations
7.
Widiez, J., Alexandre Moulin, Vladimir Prudkovskiy, et al.. (2023). Evaluation of Crystal Quality and Dopant Activation of Smart Cut<sup>TM</sup> - Transferred 4H-SiC Thin Film. Materials science forum. 1089. 71–79. 2 indexed citations
8.
Clifton, P.A., Ryan Sporer, Rick Carter, et al.. (2019). Buried SiGe as a performance booster in n-channel FDSOI MOSFETs. Solid-State Electronics. 162. 107631–107631. 1 indexed citations
9.
Schwarzenbach, W., et al.. (2017). FD-SOI material enabling CMOS technology disruption from 65nm to 12nm and beyond. 64. 1–2. 2 indexed citations
10.
Garros, X., F. Andrieu, P. Nguyen, et al.. (2015). Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes. Solid-State Electronics. 113. 127–131. 3 indexed citations
11.
Schwarzenbach, W., D. Delprat, J. Widiez, et al.. (2015). High Mobility Materials on Insulator for Advanced Technology Nodes. ECS Transactions. 66(4). 31–37. 1 indexed citations
12.
Allibert, F., P. Morin, W. Schwarzenbach, et al.. (2014). Elastic relaxation in intrinsically-strained Fins: Simulations, physical and electrical characterization. 124 125. 1–3.
13.
Daval, Nicolas, W. Schwarzenbach, Oleg Kononchuk, et al.. (2013). Smart Cut&#x2122; technology provides excellent layer uniformity for fully depleted CMOS. 1–2.
14.
Schwarzenbach, W., et al.. (2013). (Invited) Manufacturing of Ultra Thin SOI. ECS Transactions. 50(5). 53–57. 2 indexed citations
15.
Schwarzenbach, W., et al.. (2011). Excellent silicon thickness uniformity on Ultra-Thin SOI for controlling Vt variation of FDSOI. 48?6. 1–3. 5 indexed citations
16.
Schwarzenbach, W., et al.. (2010). Ultra Thin silicon substrate for next generation technology nodes. 1–3. 1 indexed citations
17.
Mazuré, C., et al.. (2010). FDSOI: From substrate to devices and circuit applications. 57. 45–51. 12 indexed citations
18.
Schwarzenbach, W., Jacques Derouard, & N. Sadeghi. (2001). Treatment of organic polymer surfaces by CF4 plasmas: Etching by fluorine atoms and influence of vacuum ultraviolet radiation. Journal of Applied Physics. 90(11). 5491–5496. 12 indexed citations
19.
Schwarzenbach, W., G. Cunge, & Jean‐Paul Booth. (1999). High mass positive ions and molecules in capacitively-coupled radio-frequency CF4 plasmas. Journal of Applied Physics. 85(11). 7562–7568. 41 indexed citations
20.
Howling, A.A., et al.. (1994). Parallel simulation of radio-frequency plasma discharges. Infoscience (Ecole Polytechnique Fédérale de Lausanne).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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