M.-Y. Ho

707 citations

6 papers · 601 indexed · h-index 5

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
Materials Chemistry
- Electronic and Structural Properties of Oxides
- Catalytic Processes in Materials Science

Papers in

Electronic, Optical and Magnetic Materials 2
- Copper Interconnects and Reliability 2
Electrical and Electronic Engineering 6
- Semiconductor materials and devices 6
- Ferroelectric and Negative Capacitance Devices 4
- Advancements in Semiconductor Devices and Circuit Design 1

Co-authors: G. D. Wilk B. Busch Petri I. Räisänen Bert Brijs David A. Muller M. Bude T. Sorsch Wilfried Vandervorst
Journals: Journal of Applied Physics (2 papers)Applied Physics Letters (2 papers)MRS Proceedings (1 paper)
Partner nations: United States Belgium Singapore

In The Last Decade

M.-Y. Ho

6 papers receiving 578 citations

Peers

Countries citing papers authored by M.-Y. Ho

Since Specialization

Citations

This map shows the geographic impact of M.-Y. Ho's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.-Y. Ho with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.-Y. Ho more than expected).

Fields of papers citing papers by M.-Y. Ho

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.-Y. Ho. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.-Y. Ho. The network helps show where M.-Y. Ho may publish in the future.

Co-authors

The 25 scholars most cited alongside M.-Y. Ho, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M.-Y. Ho Line = papers co-authored together M.-Y. Ho links everyone, so they are left out of the graph.

All Works

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6 of 6 papers shown

#	Work
1	Improved film growth and flatband voltage control of ALD HfO/sub 2/ and Hf-Al-O with n/sup +/ poly-Si gates using chemical oxides and optimized post-annealing G. D. Wilk, Marie-Christine Germain, M.-Y. Ho, B. Busch, T. Sorsch, F. Klemens, Bert Brijs, R. B. van Dover, A. Kornblit, T. Gustafsson, Eric Garfunkel, S.J. Hillenius, D. Monroe, R Coallier, J. M. Hergenrother	2003	19
2	Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon Applied Physics Letters ·Martin M. Frank, Yves J. Chabal, Martin L. Green, Annelies Delabie, Bert Brijs, G. D. Wilk, M.-Y. Ho, 雅美角野, I. J. R. Baumvol, F. C. Stedile	2003	104
3	Flat-band Voltage Study Of Atomic-layer-Deposited Aluminum-oxide Subjected To Spike Thermal Annealing MRS Proceedings ·M Wertejuk, A. T. Fiory, Nuggehalli M. Ravindra, M.-Y. Ho, G. D. Wilk, T. Sorsch	2003	2
4	Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition Journal of Applied Physics ·M.-Y. Ho, Hao Gong, G. D. Wilk, B. Busch, Maria Rosângela Silva Barros, Paul M. Voyles, David A. Muller, M. Bude, Wei Lin, A. See, M. E. Loomans, S. K. Lahiri, Petri I. Räisänen	2003	149
5	Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers Journal of Applied Physics ·Joanne Lindbom, M.-Y. Ho, B. Busch, G. D. Wilk, T. Sorsch, T. Conard, Bert Brijs, Wilfried Vandervorst, Petri I. Räisänen, David A. Muller, M. Bude, J. L. Grazul	2002	240
6	Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition Applied Physics Letters ·M.-Y. Ho, Hao Gong, G. D. Wilk, B. Busch, Maria Rosângela Silva Barros, Wei Lin, A. See, S. K. Lahiri, M. E. Loomans, Petri I. Räisänen, T. Gustafsson	2002	87

About M.-Y. Ho

M.-Y. Ho is a scholar working on Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics and Infectious Diseases, having authored 6 papers that have together received 601 indexed citations. Recurring topics across this work include Semiconductor materials and devices (6 papers), Ferroelectric and Negative Capacitance Devices (4 papers), Electronic and Structural Properties of Oxides (3 papers), Semiconductor materials and interfaces (2 papers), Copper Interconnects and Reliability (2 papers) and Advancements in Semiconductor Devices and Circuit Design (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (577 citations), Materials Chemistry (331 citations), Electronic, Optical and Magnetic Materials (76 citations), Atomic and Molecular Physics, and Optics (72 citations) and Structural Biology (3 citations). M.-Y. Ho has collaborated with scholars based in United States, Belgium and Singapore. Frequent co-authors include G. D. Wilk, B. Busch, Petri I. Räisänen, Bert Brijs, David A. Muller, M. Bude, T. Sorsch, Wilfried Vandervorst, T. Conard and J. L. Grazul. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters and MRS Proceedings.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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