E. Luckowski

586 total citations
23 papers, 324 citations indexed

About

E. Luckowski is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, E. Luckowski has authored 23 papers receiving a total of 324 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 5 papers in Atomic and Molecular Physics, and Optics and 3 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in E. Luckowski's work include Silicon Carbide Semiconductor Technologies (12 papers), Semiconductor materials and devices (12 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). E. Luckowski is often cited by papers focused on Silicon Carbide Semiconductor Technologies (12 papers), Semiconductor materials and devices (12 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). E. Luckowski collaborates with scholars based in United States and Sweden. E. Luckowski's co-authors include John R. Williams, J. Crofton, Suzanne E. Mohney, J. M. DeLucca, B. J. Skromme, Dale Ganser, Karen Moore, M. Bhatnagar, C.E. Weitzel and Michael J. Bozack and has published in prestigious journals such as Journal of The Electrochemical Society, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films and Solid-State Electronics.

In The Last Decade

E. Luckowski

20 papers receiving 307 citations

Peers

Countries citing papers authored by E. Luckowski

Since Specialization

Citations

This map shows the geographic impact of E. Luckowski's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Luckowski with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Luckowski more than expected).

Fields of papers citing papers by E. Luckowski

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Luckowski. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Luckowski. The network helps show where E. Luckowski may publish in the future.

Co-authorship network of co-authors of E. Luckowski

This figure shows the co-authorship network connecting the top 25 collaborators of E. Luckowski. A scholar is included among the top collaborators of E. Luckowski based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Luckowski. E. Luckowski is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Industry Trend: Planar Double Gate Technology 2006 ·(unknown), (unknown), E. Luckowski, J. John, (unknown), (unknown), Bich-Yen Nguyen, (unknown)	1
2	Tantalum carbide etch characterization in inductively coupled Ar∕Cl2∕HBr plasmas 2006 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·H. Kawai, Shahid Rauf, E. Luckowski, Peter L. G. Ventzek	1
3	Optimization of Hafnium Zirconate (HfZrOx) Gate Dielectric for Device Performance and Reliability 2006 ·R. I. Hegde, Dina H. Triyoso, S. Kalpat, S. Samavedam, (unknown), E. Luckowski, C. Capasso, D. C. Gilmer, M. Raymond, D. Roan, (unknown), L.B. La, E.A. Hebert, Xiaodong Wang, R. Gregory, Hari K. Somineni, Ji Jiang, (unknown), B. E. White	1
4	Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/ stack 2005 ·H.‐H. Tseng, C. Capasso, J. Schaeffer, E.A. Hebert, Philip J. Tobin, D. C. Gilmer, Dina H. Triyoso, Michael Ramon, S. Kalpat, E. Luckowski, W. Taylor, (unknown), (unknown), R. I. Hegde, (unknown), (unknown), (unknown), B. E. White	29
5	Single-layer and bilayer resist processes for EUV-type integrations 2004 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Richard D. Peters, Colita Parker, Jonathan Cobb, E. Luckowski, (unknown), (unknown)	2
6	Investigations of Metal Gate Electrodes on HfO₂ Gate Dielectrics 2004 ·MRS Proceedings ·J. Schaeffer, S. Samavedam, L. R. C. Fonseca, C. Capasso, (unknown), D. C. Gilmer, Chris Hobbs, E. Luckowski, R. Gregory, (unknown), Yong Liang, Karen Moore, (unknown), Bich-Yen Nguyen, P.J. Tobin, Bruce White	4
7	Materials Challenges for CMOS Junctions 2004 ·MRS Proceedings ·William J. Taylor, (unknown), (unknown), (unknown), C. Capasso, (unknown), (unknown), James A. Smith, E. Luckowski, Arturo Martínez, J. Schaeffer, P.J. Tobin	5
8	Oxygen vacancy defects in tantalum pentoxide: a density functional study 2003 ·Microelectronic Engineering ·Rampi Ramprasad, M. Sadd, (unknown), (unknown), Mark Raymond, E. Luckowski, S. Kalpat, (unknown), (unknown)	14
9	Electric field breakdown mechanisms in high power epitaxial 4H-SiC p-n junction diodes 2002 ·C. C. Tin, (unknown), E. Luckowski, Jeff B. Casady, Tamara Isaacs‐Smith, John R. Williams, Wayne Johnson, (unknown), T. S. Sudarshan	2
10	Fabrication procedures and characterization of 6H-SiC MESFETs for use in high temperature electronics 2002 ·Jeff B. Casady, E. Luckowski, Wayne Johnson, J. Crofton, John R. Williams	2
11	Integration of UTR processes into MPU IC manufacturing flows 2002 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Jonathan Cobb, (unknown), Colita Parker, E. Luckowski, (unknown), Richard D. Peters, Wei Wu, Scott D. Hector	5
12	High temperature ohmic contacts to p-type SiC 2002 ·J. Crofton, (unknown), (unknown), R.R. Siergiej, S. S. Mani, Jeff B. Casady, Tom Oder, John R. Williams, E. Luckowski, Tamara Isaacs‐Smith, Venkatesh Iyer, Suzanne E. Mohney	1
13	Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC 2000 ·Materials science forum ·B. J. Skromme, E. Luckowski, Karen Moore, (unknown), (unknown), (unknown), Dale Ganser	10
14	Electrical characteristics of schottky barriers on 4H-SiC: The effects of barrier height nonuniformity 2000 ·Journal of Electronic Materials ·B. J. Skromme, E. Luckowski, Karen Moore, M. Bhatnagar, C.E. Weitzel, (unknown), Dale Ganser	88
15	Improved ohmic contact to n-type 4H and 6H-SiC using nichrome 1998 ·Journal of Electronic Materials ·E. Luckowski, J. M. DeLucca, John R. Williams, Suzanne E. Mohney, Michael J. Bozack, Tamara Isaacs‐Smith, J. Crofton	20
16	Electrical characterization and charge transport in 6H-SIC MESFET’S 1996 ·AIP conference proceedings ·E. Luckowski, John R. Williams, Jeff B. Casady, Wayne Johnson, J. Crofton	0
17	Improved Nickel Silicide Ohmic Contacts to N-Type 4H and 6H-SiC Using Nichrome 1996 ·MRS Proceedings ·E. Luckowski, John R. Williams, Michael J. Bozack, Tamara Isaacs‐Smith, J. Crofton	10
18	High Electric Field Breakdown of 4H-SiC PN Junction Diodes 1996 ·MRS Proceedings ·C. C. Tin, (unknown), (unknown), E. Luckowski, Jeff B. Casady, Tamara Isaacs‐Smith, (unknown), T. S. Sudarshan, Wayne Johnson	3
19	Etching of 6H‐SiC and 4H‐SiC using NF 3 in a Reactive Ion Etching System 1996 ·Journal of The Electrochemical Society ·Jeff B. Casady, E. Luckowski, Michael J. Bozack, David C. Sheridan, Wayne Johnson, John R. Williams	39
20	High temperature ohmic and Schottky contacts to N-type 6H-SiC nickel 1995 ·AIP conference proceedings ·John R. Williams, Michael J. Bozack, Tamara Isaacs‐Smith, E. Luckowski, Christopher I. S. Meadows, J. Crofton, P.G. McMullin	4

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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