M. Raymond

1.8k total citations
6 papers, 30 citations indexed

About

M. Raymond is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Nuclear and High Energy Physics. According to data from OpenAlex, M. Raymond has authored 6 papers receiving a total of 30 indexed citations (citations by other indexed papers that have themselves been cited), including 6 papers in Electrical and Electronic Engineering, 1 paper in Atomic and Molecular Physics, and Optics and 1 paper in Nuclear and High Energy Physics. Recurrent topics in M. Raymond's work include Semiconductor materials and devices (5 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers) and Integrated Circuits and Semiconductor Failure Analysis (2 papers). M. Raymond is often cited by papers focused on Semiconductor materials and devices (5 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers) and Integrated Circuits and Semiconductor Failure Analysis (2 papers). M. Raymond collaborates with scholars based in United States, United Kingdom and Japan. M. Raymond's co-authors include S. Samavedam, A. Haggag, J. Schaeffer, P. Seller, D. Bisello, E. Noah, M.J. French, S. Kalpat, B. E. White and N. Bacchetta and has published in prestigious journals such as Journal of Applied Physics, Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment and Prepared for.

In The Last Decade

M. Raymond

4 papers receiving 28 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Raymond United States 4 24 9 5 5 2 6 30
A. Smol Russia 3 19 0.8× 13 1.4× 9 1.8× 6 1.2× 2 1.0× 4 25
Yu. Tsyupa Russia 4 16 0.7× 13 1.4× 8 1.6× 4 0.8× 2 1.0× 9 24
A. Junkes Germany 2 17 0.7× 14 1.6× 5 1.0× 5 1.0× 1 0.5× 2 21
D. Chren Czechia 4 18 0.8× 9 1.0× 4 0.8× 2 0.4× 8 23
G. Dirkes Switzerland 3 10 0.4× 11 1.2× 4 0.8× 4 0.8× 4 15
Tomohiko Oka Japan 3 17 0.7× 7 0.8× 2 0.4× 8 1.6× 7 27
R. J. Tesarek United States 2 12 0.5× 8 0.9× 5 1.0× 4 0.8× 1 0.5× 4 15
H. G. Moser Germany 3 17 0.7× 19 2.1× 13 2.6× 3 0.6× 3 1.5× 4 29
G. Batignani Italy 3 20 0.8× 14 1.6× 8 1.6× 9 1.8× 6 3.0× 5 26
S. Saha India 3 8 0.3× 7 0.8× 3 0.6× 3 0.6× 3 1.5× 5 25

Countries citing papers authored by M. Raymond

Since Specialization
Citations

This map shows the geographic impact of M. Raymond's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Raymond with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Raymond more than expected).

Fields of papers citing papers by M. Raymond

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Raymond. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Raymond. The network helps show where M. Raymond may publish in the future.

Co-authorship network of co-authors of M. Raymond

This figure shows the co-authorship network connecting the top 25 collaborators of M. Raymond. A scholar is included among the top collaborators of M. Raymond based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Raymond. M. Raymond is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

6 of 6 papers shown
1.
Niu, Chunping, M. Raymond, V. Kamineni, et al.. (2016). Interface preservation during Ge-rich source/drain contact formation. 320–323.
2.
Maitra, K., Chun-Chen Yeh, P. Zeitzoff, et al.. (2011). Analysis of parasitic resistance in double gate FinFETs with different fin lengths. 1–2. 6 indexed citations
3.
Schaeffer, J., D. C. Gilmer, S. Samavedam, et al.. (2007). On the positive channel threshold voltage of metal gate electrodes on high-permittivity gate dielectrics. Journal of Applied Physics. 102(7). 13 indexed citations
4.
Hegde, R. I., Dina H. Triyoso, S. Kalpat, et al.. (2006). Optimization of Hafnium Zirconate (HfZrOx) Gate Dielectric for Device Performance and Reliability. 1 indexed citations
5.
Noah, E., M. Raymond, A. Candelori, et al.. (2000). Total dose irradiation of a 0.25-mu-m process. Prepared for. 555–559. 5 indexed citations
6.
Raymond, M., et al.. (1994). A 2-D amplifier array chip for pixel detector readout. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 348(2-3). 673–677. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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