C. Huffman

825 total citations
38 papers, 581 citations indexed

About

C. Huffman is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Mechanics of Materials. According to data from OpenAlex, C. Huffman has authored 38 papers receiving a total of 581 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 13 papers in Electronic, Optical and Magnetic Materials and 7 papers in Mechanics of Materials. Recurrent topics in C. Huffman's work include Semiconductor materials and devices (35 papers), Copper Interconnects and Reliability (13 papers) and Advancements in Semiconductor Devices and Circuit Design (13 papers). C. Huffman is often cited by papers focused on Semiconductor materials and devices (35 papers), Copper Interconnects and Reliability (13 papers) and Advancements in Semiconductor Devices and Circuit Design (13 papers). C. Huffman collaborates with scholars based in United States, Belgium and Japan. C. Huffman's co-authors include Young‐Hee Lee, Steven M. George, P. Majhi, Husam N. Alshareef, H.C. Wen, G.Y. Yeom, Wei Han, H.F. Luan, Minhwan Jeon and Baotao Kang and has published in prestigious journals such as Journal of Applied Physics, Chemistry of Materials and ACS Applied Materials & Interfaces.

In The Last Decade

C. Huffman

35 papers receiving 547 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Huffman United States 14 502 203 66 66 43 38 581
P. Y. Hung United States 10 519 1.0× 228 1.1× 39 0.6× 58 0.9× 17 0.4× 29 576
T. Iwabuchi Japan 11 366 0.7× 204 1.0× 59 0.9× 76 1.2× 18 0.4× 31 422
G. J. Leusink United States 8 342 0.7× 193 1.0× 84 1.3× 35 0.5× 22 0.5× 18 386
H.F.W. Dekkers Belgium 15 563 1.1× 272 1.3× 27 0.4× 66 1.0× 27 0.6× 31 601
Shuichi Uchikoga Japan 9 314 0.6× 238 1.2× 44 0.7× 113 1.7× 36 0.8× 30 416
Daniel Costa Brazil 9 209 0.4× 258 1.3× 70 1.1× 46 0.7× 16 0.4× 27 325
Renan Bu China 12 252 0.5× 295 1.5× 51 0.8× 95 1.4× 100 2.3× 30 377
D. Hrunski Germany 9 337 0.7× 262 1.3× 49 0.7× 24 0.4× 16 0.4× 14 369
Cory S. Wajda United States 11 385 0.8× 172 0.8× 81 1.2× 39 0.6× 32 0.7× 46 419
B. Guillaumot France 17 1.1k 2.2× 220 1.1× 48 0.7× 131 2.0× 48 1.1× 65 1.1k

Countries citing papers authored by C. Huffman

Since Specialization
Citations

This map shows the geographic impact of C. Huffman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Huffman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Huffman more than expected).

Fields of papers citing papers by C. Huffman

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Huffman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Huffman. The network helps show where C. Huffman may publish in the future.

Co-authorship network of co-authors of C. Huffman

This figure shows the co-authorship network connecting the top 25 collaborators of C. Huffman. A scholar is included among the top collaborators of C. Huffman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Huffman. C. Huffman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Huffman, C., Dennis W. Hess, Jean‐François de Marneffe, Makoto Sekine, & Stefan De Gendt. (2015). Preface to the Focus Issue on Atomic Layer Etch and Clean. ECS Journal of Solid State Science and Technology. 4(6). Y7–Y7. 2 indexed citations
2.
Lee, Rinus T. P., Wei Yip Loh, Tommaso Orzali, et al.. (2015). (Invited) Technology Options to Reduce Contact Resistance in Nanoscale III-V MOSFETs. ECS Transactions. 66(4). 125–134. 4 indexed citations
3.
Majumdar, Kausik, C. Huffman, T. Ngai, et al.. (2013). STLM: A Sidewall TLM Structure for Accurate Extraction of Ultralow Specific Contact Resistivity. IEEE Electron Device Letters. 34(9). 1082–1084. 17 indexed citations
4.
Pantouvaki, Marianna, C. Huffman, Larry Zhao, et al.. (2011). Advanced Organic Polymer for the Aggressive Scaling of Low-kMaterials. Japanese Journal of Applied Physics. 50(4S). 04DB01–04DB01. 4 indexed citations
5.
Struyf, Herbert, Jean‐François de Marneffe, C. Huffman, et al.. (2010). Metal hard-Mask Based Double Patterning for 22nm and Beyond. Lirias (KU Leuven). 75–82. 1 indexed citations
6.
Demuynck, S., C. Huffman, Martine Claes, et al.. (2010). Integration and Dielectric Reliability of 30 nm Half Pitch Structures in Aurora® LK HM. Japanese Journal of Applied Physics. 49(4S). 04DB05–04DB05. 6 indexed citations
7.
Huffman, C., Maxime Darnon, Herbert Struyf, et al.. (2009). Dielectric Reliability of 50 nm Half Pitch Structures in Aurora® LK. Japanese Journal of Applied Physics. 48(4S). 04C018–04C018. 6 indexed citations
8.
Demuynck, S., C. Huffman, Maxime Darnon, et al.. (2008). Dielectric Reliability of 50 nm 1/2 Pitch Structures in Aurora<sup>&#174;</sup> LK. 1 indexed citations
9.
Alshareef, Husam N., Manuel Quevedo-López, H.C. Wen, et al.. (2008). Impact of Carbon Incorporation on the Effective Work Function of WN and TaN Metal Gate Electrodes. Electrochemical and Solid-State Letters. 11(7). H182–H182. 4 indexed citations
10.
Song, S. C., et al.. (2006). Improved Gate-Edge Profile of Metal/High-k Gate Stack Using an NH[sub 3] Ashing Process in Gate-First CMOSFETs. Electrochemical and Solid-State Letters. 9(1). G4–G4. 2 indexed citations
11.
Song, Sook‐Keun, M. Mahmood Hussain, C. Huffman, et al.. (2006). Highly Manufacturable 45nm LSTP CMOSFETs Using Novel Dual High-k and Dual Metal Gate CMOS Integration. 13–14. 30 indexed citations
12.
Alshareef, Husam N., H. R. Harris, H.C. Wen, et al.. (2006). Thermally Stable N-Metal Gate MOSFETs Using La-Incorporated HfSiO Dielectric. 7–8. 29 indexed citations
13.
Wen, H.C., Patrick Lysaght, Husam N. Alshareef, et al.. (2005). Thermal response of Ru electrodes in contact with SiO2 and Hf-based high-k gate dielectrics. Journal of Applied Physics. 98(4). 25 indexed citations
14.
Zhang, Zhibo, S. C. Song, C. Huffman, et al.. (2005). Integration of Dual Metal Gate CMOS on High-k Dielectrics Utilizing a Metal Wet Etch Process. Electrochemical and Solid-State Letters. 8(10). G271–G271. 32 indexed citations
15.
Wen, Huiqing, P. Majhi, Husam N. Alshareef, et al.. (2005). Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS. 24. 107–108. 1 indexed citations
16.
17.
Song, Sook‐Keun, C. Huffman, Joel Barnett, et al.. (2005). Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on HfO/sub 2/ gate dielectric. 50–51. 19 indexed citations
18.
Choi, Kwang‐Il, Patrick Lysaght, H.C. Wen, et al.. (2005). Growth mechanism of ALD-TiN and the thickness dependence of work function. 25. 103–104. 1 indexed citations
19.
20.
Loewenstein, Lee M., et al.. (1987). Photoresist Stripping Using a Remote Plasma: Chemical and Transport Effects. MRS Proceedings. 98. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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