M. Rashed

459 total citations
19 papers, 68 citations indexed

About

M. Rashed is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computer Networks and Communications. According to data from OpenAlex, M. Rashed has authored 19 papers receiving a total of 68 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 2 papers in Atomic and Molecular Physics, and Optics and 1 paper in Computer Networks and Communications. Recurrent topics in M. Rashed's work include Advancements in Semiconductor Devices and Circuit Design (15 papers), Semiconductor materials and devices (12 papers) and Silicon and Solar Cell Technologies (5 papers). M. Rashed is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (15 papers), Semiconductor materials and devices (12 papers) and Silicon and Solar Cell Technologies (5 papers). M. Rashed collaborates with scholars based in United States, Bangladesh and Germany. M. Rashed's co-authors include C.M. Maziar, S. Jallepalli, W.-K. Shih, A.F. Tasch, Thomas J. T. Kwan, Joe C. Campbell, S. Banerjee, Q. Ouyang, D.L. Kencke and Jongwook Kye and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and Physics Letters A.

In The Last Decade

M. Rashed

14 papers receiving 65 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M. Rashed United States	6	61	13	8	4	4	19	68
B. Greene United States	5	85 1.4×	9 0.7×	13 1.6×	3 0.8×	5 1.3×	12	88
C. Weintraub United States	6	101 1.7×	11 0.8×	7 0.9×	6 1.5×	6 1.5×	13	107
D. Coolbaugh United States	6	117 1.9×	11 0.8×	5 0.6×	6 1.5×	8 2.0×	12	117
C. Tsai United States	5	87 1.4×	5 0.4×	5 0.6×	4 1.0×	3 0.8×	6	89
L. Pasini France	3	47 0.8×	8 0.6×	12 1.5×	3 0.8×	11 2.8×	4	50
C.-H. Jan United States	4	84 1.4×	11 0.8×	7 0.9×	11 2.8×	5 1.3×	6	91
Snežana Golubović Serbia	10	218 3.6×	10 0.8×	8 1.0×	3 0.8×	3 0.8×	22	236
R. Malik United States	5	70 1.1×	12 0.9×	15 1.9×	3 0.8×	17 4.3×	13	87
S. Luning United States	5	43 0.7×	15 1.2×	7 0.9×		8 2.0×	9	43
K. Komeyli United States	6	72 1.2×	5 0.4×	5 0.6×	13 3.3×	3 0.8×	6	72

Countries citing papers authored by M. Rashed

Since Specialization

Citations

This map shows the geographic impact of M. Rashed's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Rashed with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Rashed more than expected).

Fields of papers citing papers by M. Rashed

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Rashed. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Rashed. The network helps show where M. Rashed may publish in the future.

Co-authorship network of co-authors of M. Rashed

This figure shows the co-authorship network connecting the top 25 collaborators of M. Rashed. A scholar is included among the top collaborators of M. Rashed based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Rashed. M. Rashed is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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19 of 19 papers shown

Rashed, M., et al.. (2025). A theoretical analysis of broadband nanoscale metamaterial absorber using interconnected slotted ring resonators for EMI shielding in the ultraviolet regime. Physics Letters A. 563. 131069–131069. 1 indexed citations

Robin, Malo, et al.. (2025). Exploring CMOS Technology Impact on Static Random Access Memory (SRAM): A Performance Assessment. 1–6. 1 indexed citations

Rashed, M., et al.. (2025). Comparative Analysis of ST-Based SRAM Cell Design in CMOS and CNFET Technologies. 1–6.

Kim, Juhan, et al.. (2019). Evaluation of Standard Cell Architecture in 12LP FinFET Technology. 56–58.

Kim, Jeff, et al.. (2018). Low Cost and Highly Manufacturable MOL/BEOL Constructs in 22FDSOI Technology for High Performance and Low Power Applications. 91–93. 3 indexed citations

Rashed, M., et al.. (2018). Back-bias generator for post-fabrication threshold voltage tuning applications in 22nm FD-SOI process. 268–273. 5 indexed citations

Rashed, M., et al.. (2018). Design and Technology Co-Optimization for exploring Power, Performance, Area and Manufacturability Trade-offs in Advanced FDSOI and FinFET Technologies. 89–90. 3 indexed citations

Verma, Piyush Chandra, Andrey A. Lutich, Juhan Kim, et al.. (2017). Design space analysis of novel interconnect constructs for 22nm FDX technology. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 10148. 101480Z–101480Z. 1 indexed citations

Brotman, Andrew W., et al.. (2011). Design enablement for yield and area optimization at 20 nm and below. Symposium on VLSI Technology. 108–109.

10.

Shih, W.-K., et al.. (2002). Analysis of quantization effects in silicon (100) inversion layers using a Monte Carlo tool. 201–204. 1 indexed citations

11.

Chang, Donghoon, et al.. (2002). Efficacy of Ar in reducing the kink effect on floating-body NFD/SOI CMOS. 155–156.

12.

Kencke, D.L., Q. Ouyang, S. Jallepalli, et al.. (2002). The origin of secondary electron gate current: a multiple-stage Monte Carlo study for scaled, low-power flash memory. 889–892. 6 indexed citations

13.

Rashed, M., et al.. (2002). Simulation of electron transport in strained silicon on relaxed Si/sub 1-x/Ge/sub x/ substrates. 168–171. 7 indexed citations

14.

Rashed, M., W.-K. Shih, S. Jallepalli, Thomas J. T. Kwan, & C.M. Maziar. (2002). Monte Carlo simulation of electron transport in strained Si/Si/sub 1-x/Ge/sub x/ n-MOSFETs. 765–768. 8 indexed citations

15.

Shih, W.-K., et al.. (1998). A Monte Carlo Study of Electron Transport in Silicon nMOSFET Inversion Layers. VLSI design. 6(1-4). 53–56.

16.

Jallepalli, S., M. Rashed, W.-K. Shih, C.M. Maziar, & A.F. Tasch. (1997). A full-band Monte Carlo model for hole transport in silicon. Journal of Applied Physics. 81(5). 2250–2255. 22 indexed citations

17.

Rashed, M., C.M. Maziar, Sanjay K. Banerjee, et al.. (1994). Room temperature electroabsorption in a Ge/sub x/Si/sub 1-x/ PIN photodiode. IEEE Transactions on Electron Devices. 41(12). 2297–2300. 4 indexed citations

18.

Rashed, M., et al.. (1993). Electroabsorption Effect in GexSi1-xSi Multiple Quantum Wells at Room Temperature. Integrated Photonics Research. IWA5–IWA5. 1 indexed citations

19.

Rashed, M., et al.. (1993). Room temperature observation of photocurrent dependence on applied bias in Si1−xGex/Si multiquantum wells. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(4). 1685–1688. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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