T. Conard

480 total citations
19 papers, 390 citations indexed

About

T. Conard is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, T. Conard has authored 19 papers receiving a total of 390 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 7 papers in Computational Mechanics and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in T. Conard's work include Semiconductor materials and devices (14 papers), Ion-surface interactions and analysis (7 papers) and Copper Interconnects and Reliability (6 papers). T. Conard is often cited by papers focused on Semiconductor materials and devices (14 papers), Ion-surface interactions and analysis (7 papers) and Copper Interconnects and Reliability (6 papers). T. Conard collaborates with scholars based in Belgium, Netherlands and United States. T. Conard's co-authors include Bert Brijs, Wilfried Vandervorst, David A. Muller, G. D. Wilk, M. Bude, T. Sorsch, J. L. Grazul, Petri I. Räisänen, M.-Y. Ho and B. Busch and has published in prestigious journals such as Physical review. B, Condensed matter, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

T. Conard

19 papers receiving 374 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Conard Belgium 6 346 192 84 44 32 19 390
E. Çetinörgü Israel 15 369 1.1× 389 2.0× 55 0.7× 37 0.8× 38 1.2× 19 462
S. Ishibashi Japan 5 341 1.0× 315 1.6× 70 0.8× 35 0.8× 31 1.0× 7 424
Tomo Ueno Japan 11 288 0.8× 217 1.1× 61 0.7× 61 1.4× 20 0.6× 36 358
Marie Netrvalová Czechia 11 232 0.7× 287 1.5× 66 0.8× 17 0.4× 23 0.7× 51 365
P. Y. Hung United States 10 519 1.5× 228 1.2× 39 0.5× 76 1.7× 17 0.5× 29 576
D. Hrunski Germany 9 337 1.0× 262 1.4× 49 0.6× 28 0.6× 16 0.5× 14 369
Yingxin Cui China 10 199 0.6× 146 0.8× 61 0.7× 51 1.2× 29 0.9× 22 311
C. Huffman United States 14 502 1.5× 203 1.1× 66 0.8× 37 0.8× 43 1.3× 38 581
Max N. Yoder United States 5 254 0.7× 117 0.6× 70 0.8× 111 2.5× 30 0.9× 15 362
S. Patra India 10 176 0.5× 187 1.0× 21 0.3× 35 0.8× 49 1.5× 28 300

Countries citing papers authored by T. Conard

Since Specialization
Citations

This map shows the geographic impact of T. Conard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Conard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Conard more than expected).

Fields of papers citing papers by T. Conard

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Conard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Conard. The network helps show where T. Conard may publish in the future.

Co-authorship network of co-authors of T. Conard

This figure shows the co-authorship network connecting the top 25 collaborators of T. Conard. A scholar is included among the top collaborators of T. Conard based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Conard. T. Conard is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Conard, T., Alexis Franquet, D. Tsvetanova, Taoufiq Mouhib, & W. Vandervorst. (2012). Degradation of deep ultraviolet photoresist by As‐implantation studied by Ar‐cluster beam profiling. Surface and Interface Analysis. 45(1). 406–408. 4 indexed citations
2.
Franquet, Alexis, T. Conard, Eszter Vörösházi, et al.. (2012). Characterization of organic solar cell materials by G‐SIMS. Surface and Interface Analysis. 45(1). 430–433. 2 indexed citations
3.
Celano, Umberto, T. Conard, Thomas Hantschel, & W. Vandervorst. (2011). Probing the metal gate high k interactions by backside XPS and C-AFM. MRS Proceedings. 1336. 1 indexed citations
4.
Marneffe, Jean‐François de, T. Conard, I. Hoflijk, et al.. (2009). The metal hard-mask approach for contact patterning. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7521. 752106–752106. 1 indexed citations
5.
Huyghebaert, Cedric, T. Conard, & W. Vandervorst. (2004). The influence of oxygen on the Hf signal intensity in the characterization of HfO2/Si stacks. Applied Surface Science. 231-232. 552–555. 3 indexed citations
6.
Conard, T., Cedric Huyghebaert, & W. Vandervorst. (2004). ToF-SIMS profiling of HfO2/Si stacks: influence of sputtering condition of profile shape. Applied Surface Science. 231-232. 574–580. 3 indexed citations
7.
Huyghebaert, Cedric, T. Conard, Bert Brijs, & Wilfried Vandervorst. (2004). Impact of the Ge concentration on the Ge-ionisation probability and the matrix sputter yield for a SiGe matrix under oxygen irradiation. Applied Surface Science. 231-232. 708–712. 11 indexed citations
8.
Conard, T., et al.. (2004). Depth profiling of ZrO2/SiO2/Si stacks—a TOF-SIMS and computer simulation study. Applied Surface Science. 231-232. 603–608. 4 indexed citations
9.
Bender, H., T. Conard, Olivier Richard, et al.. (2004). Physical characterization of mixed HfAlO layers by complementary analysis techniques. Materials Science and Engineering B. 109(1-3). 60–63. 4 indexed citations
10.
Brongersma, H.H., I. Vervoort, H. Bender, et al.. (2003). Non-correlated behavior of sheet resistance and stress during self-annealing of electroplated copper. 514. 290–292. 1 indexed citations
11.
Pétry, J., et al.. (2003). Effect of N2 annealing on AlZrO oxide. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 21(4). 1482–1487. 8 indexed citations
12.
Bender, H., T. Conard, Hiroshi Nohira, et al.. (2002). Infrared interface analysis of high-k dielectrics deposited by atomic layer chemical vapour deposition. 226–229. 1 indexed citations
13.
Ho, M.-Y., B. Busch, G. D. Wilk, et al.. (2002). Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers. Journal of Applied Physics. 92(12). 7168–7174. 240 indexed citations
14.
Baklanov, Mikhaı̈l R., Denis Shamiryan, Zs. Tôkei, et al.. (2001). Characterization of Cu surface cleaning by hydrogen plasma. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 19(4). 1201–1211. 81 indexed citations
15.
Gendt, Stefan De, T. Conard, H. Bender, et al.. (2001). Controlled Deposition of Organic Contamination and Removal with Ozone-Based Cleanings. Journal of The Electrochemical Society. 148(3). G118–G118. 13 indexed citations
16.
Kondoh, Eiichi, T. Conard, Bert Brijs, et al.. (1999). A chemical role of refractory metal caps in Co silicidation: Evidence of SiO2 reduction by Ti cap. Journal of materials research/Pratt's guide to venture capital sources. 14(11). 4402–4408. 4 indexed citations
17.
Conard, T., Eiichi Kondoh, H. De Witte, Karen Maex, & W. Vandervorst. (1999). X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry study of the role of Ti and TiN caps on the cobalt/SiO2 interface. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(4). 1244–1249. 5 indexed citations
18.
Loo, Roger, Matty Caymax, T. Conard, et al.. (1998). Ultra thin gate oxides for 0.1um heterojunction CMOS applications by the use of a sacrifical Si layer. 608–611. 3 indexed citations
19.
Yu, Liming, P.A. Thiry, A. Degiovanni, T. Conard, & R. Caudano. (1994). Role of multiple dipole scattering in high-resolution electron-energy-loss spectroscopy. Physical review. B, Condensed matter. 49(17). 11613–11618. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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