B. Winstead

534 total citations
24 papers, 358 citations indexed

About

B. Winstead is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Theory and Mathematics. According to data from OpenAlex, B. Winstead has authored 24 papers receiving a total of 358 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 1 paper in Computational Theory and Mathematics. Recurrent topics in B. Winstead's work include Advancements in Semiconductor Devices and Circuit Design (22 papers), Semiconductor materials and devices (20 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). B. Winstead is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (22 papers), Semiconductor materials and devices (20 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). B. Winstead collaborates with scholars based in United States, Japan and Spain. B. Winstead's co-authors include Umberto Ravaioli, D. Jovanovic, Wei Zhao, Alan Seabaugh, Sanjay K. Banerjee, Xiaofeng Fan, Hideaki Tsuchiya, D. Tekleab, Leonard F. Register and Xiaolin Wang and has published in prestigious journals such as Journal of The Electrochemical Society, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

B. Winstead

22 papers receiving 334 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
B. Winstead United States	9	341	86	42	30	4	24	358
R.J.P. Lander Belgium	11	300 0.9×	55 0.6×	43 1.0×	16 0.5×	6 1.5×	24	312
T.-C. Chen United States	10	299 0.9×	57 0.7×	33 0.8×	25 0.8×	8 2.0×	14	302
R. Duschl Germany	10	274 0.8×	146 1.7×	38 0.9×	61 2.0×	4 1.0×	26	293
N. Garbar Ukraine	13	356 1.0×	56 0.7×	60 1.4×	12 0.4×	5 1.3×	51	365
H. van Meer Belgium	10	444 1.3×	61 0.7×	54 1.3×	18 0.6×	10 2.5×	41	452
G. Cusmai Italy	10	328 1.0×	95 1.1×	70 1.7×	29 1.0×	2 0.5×	22	338
P.-F. Lu United States	10	304 0.9×	48 0.6×	27 0.6×	11 0.4×	7 1.8×	32	307
I. Post United Kingdom	9	354 1.0×	89 1.0×	30 0.7×	33 1.1×	7 1.8×	20	360
Stefano Poli Italy	10	316 0.9×	52 0.6×	70 1.7×	68 2.3×	3 0.8×	18	343

Countries citing papers authored by B. Winstead

Since Specialization

Citations

This map shows the geographic impact of B. Winstead's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Winstead with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Winstead more than expected).

Fields of papers citing papers by B. Winstead

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Winstead. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Winstead. The network helps show where B. Winstead may publish in the future.

Co-authorship network of co-authors of B. Winstead

This figure shows the co-authorship network connecting the top 25 collaborators of B. Winstead. A scholar is included among the top collaborators of B. Winstead based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Winstead. B. Winstead is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Gilmer, D. C., J. Schaeffer, William J. Taylor, et al.. (2010). Strained SiGe Channels for Band-Edge PMOS Threshold Voltages With Metal Gates and High- $k$ Dielectrics. IEEE Transactions on Electron Devices. 57(4). 898–904. 20 indexed citations

Ghosh, Bahniman, Hai Liu, B. Winstead, M. Foisy, & Sanjay K. Banerjee. (2010). Retention modeling of nanocrystalline flash memories: A Monte Carlo approach. Solid-State Electronics. 54(11). 1295–1299. 1 indexed citations

Yater, Jane, Juan Shen, T. Merchant, et al.. (2009). 16Mb Split Gate Flash Memory with Improved Process Window. 1–2. 3 indexed citations

Trivedi, Vishal, B. Winstead, Luyao Kang, et al.. (2007). High performance, highly reliable FD/SOI I/O MOSFETs in contemporary high-performance PD/SOI CMOS. 83–84.

Fan, Xiaofeng, et al.. (2007). Hole Mobility and Thermal Velocity Enhancement for Uniaxial Stress in Si up to 4 GPa. IEEE Transactions on Electron Devices. 54(2). 291–296. 14 indexed citations

Winstead, B., William J. Taylor, D. Tekleab, et al.. (2007). SiGe-Channel Confinement Effects for Short-Channel PFETs With Nonbandedge Gate Workfunctions. IEEE Electron Device Letters. 28(8). 719–721. 6 indexed citations

Tekleab, D., et al.. (2006). Stress Sensitivity of PMOSFET Under High Mechanical Stress. 26. 119–122. 1 indexed citations

Tekleab, D., B. Winstead, Piotr Grudowski, et al.. (2006). Multi-Layer Model for Stressor Film Deposition. 123–126. 7 indexed citations

Zhao, Wei, et al.. (2005). Opposing dependence of the electron and hole gate currents in SOI MOSFETs under uniaxial strain. IEEE Electron Device Letters. 26(6). 410–412. 41 indexed citations

10.

Vandooren, A., et al.. (2004). Comparison of raised source/drain versus raised extension in ultra-thin body, fully-depleted-SOI, including effects of BEOL via capacitances. Solid-State Electronics. 48(9). 1607–1612. 2 indexed citations

11.

Winstead, B. & Umberto Ravaioli. (2003). A quantum correction based on schrodinger equation applied to Monte Carlo device simulation. IEEE Transactions on Electron Devices. 50(2). 440–446. 78 indexed citations

12.

Winstead, B., et al.. (2003). Monte Carlo simulations of double-gate MOSFETs. IEEE Transactions on Electron Devices. 50(12). 2467–2473. 39 indexed citations

13.

Winstead, B., Hideaki Tsuchiya, & Umberto Ravaioli. (2002). Comparison of Quantum Corrections for Monte Carlo Simulation. Journal of Computational Electronics. 1(1-2). 201–207. 11 indexed citations

14.

Tsuchiya, Hiroyuki, B. Winstead, & Umberto Ravaioli. (2002). Quantum potential approaches for nano-scale device simulation. 118–119. 1 indexed citations

15.

Winstead, B. & Umberto Ravaioli. (2002). A coupled Schrodinger/Monte Carlo technique for quantum-corrected device simulation. 169–170. 4 indexed citations

16.

Tsuchiya, Hideaki, B. Winstead, & Umberto Ravaioli. (2001). Quantum Potential Approachesfor Nano‐scale Device Simulation. VLSI design. 13(1-4). 335–340. 7 indexed citations

17.

Winstead, B.. (2001). Monte Carlo Simulation of Silicon Devices Including Quantum Correction and Strain.

18.

Ravaioli, Umberto, et al.. (2001). Cluster‐based Parallel 3‐D Monte CarloDevice Simulation. VLSI design. 13(1-4). 51–56. 1 indexed citations

19.

Winstead, B. & Umberto Ravaioli. (2000). Simulation of Schottky barrier MOSFETs with a coupled quantum injection/Monte Carlo technique. IEEE Transactions on Electron Devices. 47(6). 1241–1246. 75 indexed citations

20.

Ravaioli, Umberto, et al.. (2000). Monte Carlo simulation for ultra-small MOS devices. Superlattices and Microstructures. 27(2-3). 137–145. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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