P. Y. Hung

715 total citations
29 papers, 576 citations indexed

About

P. Y. Hung is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, P. Y. Hung has authored 29 papers receiving a total of 576 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 9 papers in Materials Chemistry. Recurrent topics in P. Y. Hung's work include Semiconductor materials and devices (20 papers), Integrated Circuits and Semiconductor Failure Analysis (8 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). P. Y. Hung is often cited by papers focused on Semiconductor materials and devices (20 papers), Integrated Circuits and Semiconductor Failure Analysis (8 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). P. Y. Hung collaborates with scholars based in United States, Australia and Spain. P. Y. Hung's co-authors include Alain C. Diebold, G. Bersuker, P. D. Kirsch, Manuel Quevedo-López, Brendan Foran, J. Price, Eric M. Vogel, Chadwin D. Young, George Brown and J.B. Bernstein and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

P. Y. Hung

27 papers receiving 549 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
P. Y. Hung United States	10	519	228	76	58	39	29	576
J. Löffler Netherlands	12	439 0.8×	245 1.1×	78 1.0×	43 0.7×	38 1.0×	40	484
H.F.W. Dekkers Belgium	15	563 1.1×	272 1.2×	99 1.3×	66 1.1×	27 0.7×	31	601
Yury Kuzminykh Switzerland	12	262 0.5×	224 1.0×	70 0.9×	38 0.7×	32 0.8×	30	347
N. Buffet France	12	393 0.8×	213 0.9×	101 1.3×	132 2.3×	23 0.6×	29	452
Erwann Fourmond France	15	604 1.2×	258 1.1×	199 2.6×	76 1.3×	25 0.6×	39	657
C. Hobbs United States	15	781 1.5×	287 1.3×	118 1.6×	62 1.1×	71 1.8×	46	826
W. Kissinger Germany	13	369 0.7×	264 1.2×	139 1.8×	72 1.2×	36 0.9×	33	430
I. Konovalov Germany	14	539 1.0×	442 1.9×	102 1.3×	59 1.0×	54 1.4×	41	636
D.N. Kouvatsos Greece	12	551 1.1×	370 1.6×	74 1.0×	153 2.6×	43 1.1×	69	625
M. Wimmer Germany	11	419 0.8×	377 1.7×	78 1.0×	30 0.5×	82 2.1×	19	475

Countries citing papers authored by P. Y. Hung

Since Specialization

Citations

This map shows the geographic impact of P. Y. Hung's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Y. Hung with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Y. Hung more than expected).

Fields of papers citing papers by P. Y. Hung

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Y. Hung. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Y. Hung. The network helps show where P. Y. Hung may publish in the future.

Co-authorship network of co-authors of P. Y. Hung

This figure shows the co-authorship network connecting the top 25 collaborators of P. Y. Hung. A scholar is included among the top collaborators of P. Y. Hung based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Y. Hung. P. Y. Hung is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Anusha, P. T., P. Y. Hung, Shien‐Der Tzeng, et al.. (2024). Investigating Dopant Effects in ZnO as an Electron Transport Layer for Enhanced Efficiency in Organic Photovoltaics. Advanced Materials Interfaces. 12(11). 3 indexed citations

Hung, P. Y., et al.. (2015). Determination of Free Electron Density in Sequentially Doped In_xGa_1-xAs by Raman Spectroscopy. Applied Spectroscopy. 69(2). 239–242. 3 indexed citations

Hung, P. Y., et al.. (2014). Raman spectroscopy studies of dopant activation and free electron density of In0.53Ga0.47As via sulfur monolayer doping. Physical Chemistry Chemical Physics. 16(14). 6539–6539. 12 indexed citations

Yang, Lingming, Kausik Majumdar, Yuchen Du, et al.. (2014). High-performance MoS<inf>2</inf> field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm). 1–2. 23 indexed citations

Loh, W.Y., Richard J. Hill, Joel Barnett, et al.. (2013). Sub-10nm junction in InGaAs with sulfur mono-layer doping. 95. 1–2. 4 indexed citations

Yoo, Woo Sik, et al.. (2012). Characterization of Strain-Engineered Si:C Epitaxial Layers on Si Substrates. ECS Transactions. 45(6). 23–29. 4 indexed citations

Oh, Jungwoo, Kanghoon Jeon, Se‐Hoon Lee, et al.. (2012). High mobility CMOS transistors on Si/SiGe heterostructure channels. Microelectronic Engineering. 97. 26–28. 6 indexed citations

Ok, Kang Min, W.Y. Loh, Chadwin D. Young, et al.. (2011). Parasitic resistance reduction technology. 85. 50–54. 3 indexed citations

Loh, Wei Yip, P. Y. Hung, G. Bersuker, et al.. (2011). High temperature millisecond silicide anneal for contact resistivity < 10<sup>−8</sup> Ωcm<sup>2</sup>. 1–2. 1 indexed citations

10.

Park, Chang Seo, G. Bersuker, P. Y. Hung, Paul Kirsch, & Raj Jammy. (2010). Impact of Oxygen on Work Function of Ru Oxide Metal Gate. Electrochemical and Solid-State Letters. 13(4). H105–H105. 6 indexed citations

11.

Ok, Kang Min, Dmitry Veksler, P. Y. Hung, et al.. (2010). Reducing R<inf>ext</inf> in laser annealed enhancement-mode In<inf>0.53</inf>Ga<inf>0.47</inf>As surface channel n-MOSFET. 38–39. 2 indexed citations

12.

Böscke, T. S., P. Y. Hung, P. D. Kirsch, Manuel Quevedo-López, & R. Ramı́rez-Bon. (2009). Increasing permittivity in HfZrO thin films by surface manipulation. Applied Physics Letters. 95(5). 56 indexed citations

13.

Windover, Donald, David Gil, James P. Cline, et al.. (2007). NIST method for determining model-independent structural information by X-ray reflectometry. AIP conference proceedings. 931. 287–291. 5 indexed citations

14.

Govindarajan, S., T. S. Böscke, P. D. Kirsch, et al.. (2007). Higher Permittivity Rare Earth-Doped HfO2 and ZrO2 Dielectrics for Logic and Memory Applications. 1–2. 2 indexed citations

15.

Heh, Dawei, Chadwin D. Young, George Brown, et al.. (2006). Spatial distributions of trapping centers in HfO2∕SiO2 gate stacks. Applied Physics Letters. 88(15). 59 indexed citations

16.

Kirsch, P. D., Manuel Quevedo-López, Y. Senzaki, et al.. (2006). Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility. Journal of Applied Physics. 99(2). 98 indexed citations

17.

Hung, P. Y., et al.. (2005). X-ray reflectometry and x-ray fluorescence monitoring of the atomic layer deposition process for high-k gate dielectrics. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 23(5). 2244–2248. 9 indexed citations

18.

Nguyen, Nhan V., Şafak Sayan, Igor Levin, et al.. (2005). Optical band gaps and composition dependence of hafnium–aluminate thin films grown by atomic layer chemical vapor deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 23(6). 1706–1713. 54 indexed citations

19.

Lysaght, Patrick, Husam N. Alshareef, C. Huffman, et al.. (2005). Growth mechanism of TiN film on dielectric films and the effects on the work function. Thin Solid Films. 486(1-2). 141–144. 34 indexed citations

20.

Price, J., et al.. (2004). Spectroscopic ellipsometry characterization of HfxSiyOz films using the Cody–Lorentz parameterized model. Applied Physics Letters. 85(10). 1701–1703. 72 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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