G. D. Via

1.9k citations

67 papers · 1.5k indexed · h-index 25

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 53
- GaN-based semiconductor devices and materials 53
Hardware and Architecture 7

Co-authors: J. Gillespie Antonio Crespo Gregg H. Jessen Robert Fitch Manuel Trejo Eric R. Heller Derrick Langley Kelson D. Chabak
Journals: IEEE Electron Device Letters (9 papers)Solid-State Electronics (6 papers)Microelectronics Reliability (5 papers)Applied Physics Letters (4 papers)physica status solidi (a) (2 papers)
Partner nations: United States South Korea United Kingdom

In The Last Decade

G. D. Via

63 papers receiving 1.4k citations

Peers

Countries citing papers authored by G. D. Via

Since Specialization

Citations

This map shows the geographic impact of G. D. Via's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. D. Via with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. D. Via more than expected).

Fields of papers citing papers by G. D. Via

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. D. Via. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. D. Via. The network helps show where G. D. Via may publish in the future.

Co-authors

The 25 scholars most cited alongside G. D. Via, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G. D. Via Line = papers co-authored together G. D. Via links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	From Silicon to Simulation: A Full Decomposition of a Fabricated 130 nm Serial Peripheral Interface for Establishing an Assurance Baseline Root-of-Trust Robert Beyer, خليل محمد أبوعلان, Tao Zhang, D. Luu, Dumitras, G. D. Via	2020	8
2	A Decomposition Workflow for Integrated Circuit Verification and Validation Robert Beyer, Tao Zhang, D. Luu, Matthew Sutter, Andrew Elliott, AdedoyinA Adesanya, G. D. Via	2020	30
3	Implementation of High-Power-Density <inline-formula> <tex-math notation="LaTeX">$X$ </tex-math></inline-formula>-Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process IEEE Electron Device Letters ·Robert Fitch, Dennis E. Walker, Andrew J. Green, Stephen E. Tetlak, J. Gillespie, Ryan Gilbert, 小西省三郎, S. Otto, Raúl Jiménez-Castaño, G. D. Via, Kelson D. Chabak, Gregg H. Jessen	2015	50
4	High-Performance GaN-on-Diamond HEMTs Fabricated by Low-Temperature Device Transfer Process Muhammad Chishty, P.C. Chao, José Díaz, X BESSA, Baihaqie Ndaru Findarto, Szilárd Pothorszky, Marie-Louise Cordillot, Robert Gennis, Craig D. McGray, G. D. Via, J. D. Blevins	2015	16
5	Wafer‐scale GaN HEMT performance enhancement by diamond substrate integration Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·G. D. Via, P G Than, J. D. Blevins, Kelson D. Chabak, Gregg H. Jessen, J. Gillespie, Robert Fitch, Antonio Crespo, 小西省三郎, Carol Fritz-Gibbon, Stephen E. Tetlak, Ryan Gilbert, Maria Clara Z Zontin, J. C. Westmoreland, James W. Pomeroy, M. Kuball, Joseph Maurer, Avram Bar‐Cohen	2014	28
6	Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges Applied Physics Letters ·N. Killat, Miguel Montes Bajo, T. Paskova, K. R. Evans, Jacob H. Leach, X. Li, Ümit Özgür, H. Morkoç̌, Kelson D. Chabak, Antonio Crespo, J. Gillespie, Robert Fitch, M. Khludova, Dennis E. Walker, Manuel Trejo, G. D. Via, J. D. Blevins, Martin Kuball	2013	21
7	Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates IEEE Electron Device Letters ·M. Ťapajna, N. Killat, Vincent Clay, T. Paskova, K. R. Evans, Jacob H. Leach, X. Li, (unknown), H. Morkoç̌, Kelson D. Chabak, Antonio Crespo, J. Gillespie, Robert Fitch, M. Khludova, Dennis E. Walker, Manuel Trejo, G. D. Via, J. D. Blevins, Martin Kuball	2012	12
8	Effect of Drain Bias on Degradation of AlGaN∕GaN High Electron Mobility Transistors under X-Band Operation Electrochemical and Solid-State Letters ·E Douglas, S. J. Pearton, Carol Fritz-Gibbon, G. D. Via, Lu Liu, F. Ren	2011	4
9	Electric-Field-Driven Degradation in off-State Step-Stressed AlGaN/GaN High-Electron Mobility Transistors IEEE Transactions on Device and Materials Reliability ·Chih-Yang Chang, E Douglas, Jin-Hyung Kim, Lu Liu, Chien-Fong Lo, K. S. Gorbachev, Wahyu Nur Alimyaningtias, F. Ren, F. Ren, G. D. Via, David A. Cullen, Lin Zhou, David J. Smith, Soohwan Jang, S. J. Pearton	2011	37
10	Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency IEEE Electron Device Letters ·Kelson D. Chabak, Manuel Trejo, Antonio Crespo, Dennis E. Walker, Jinwei Yang, R. Gaška, M. Khludova, J. Gillespie, Gregg H. Jessen, Virginia Trimble, G. D. Via	2010	25
11	High frequency performance of Ga free barrier AlInN/GaN HEMT Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Antonio Crespo, Zang Ping, Kelson D. Chabak, J. Gillespie, Gregg H. Jessen, M. Khludova, J P Liu, Manuel Trejo, G. D. Via, Narain As, H. E. SMITH, Dennis E. Walker, Maria Clara Z Zontin, Xiaoqin Gao, Shiping Guo	2010	2
12	AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter‐wave applications physica status solidi (a) ·Shiping Guo, Xiang Gao, André Hiratsuka, Osita Echieobi, Han Wang, Tomás Palacios, Antonio Crespo, J. Gillespie, Kelson D. Chabak, Manuel Trejo, L. Labidi, J. Knollenberg, G. D. Via, M. Khludova, Howard E. Smith, D. H. Tomich	2010	25
13	Ti/Al/Ni/Au Ohmic Contacts on AlGaN/GaN HEMTs Antonio Crespo, Robert Fitch, J. Gillespie, Neil Moser, G. D. Via, 舘野正夫	2003	2
14	Effects of deep-level defects on ohmic contact and frequency performance of AlGaN/GaN high-electron-mobility transistors Applied Physics Letters ·Gregg H. Jessen, Robert Fitch, J. Gillespie, G. D. Via, B. D. White, S. Bradley, Dennis E. Walker, L. J. Brillson	2003	10
15	High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC IEEE Electron Device Letters ·Gregg H. Jessen, Robert Fitch, J. Gillespie, G. D. Via, Neil Moser, 舘野正夫, Antonio Crespo, J. Sewell, R. Dettmer, T. Jenkins, R. F. Davis, Jinwei Yang, M.A. Khan, S.C. Binari	2003	15
16	Emission and reflection spectra from AlxGa1−xN/GaN single heterostructures Journal of Applied Physics ·D. C. Reynolds, J. E. Hoelscher, C. W. Litton, T. C. Collins, Robert Fitch, G. D. Via, J. Gillespie, A. Crespo, T. Jenkins, A. Saxler	2003	1
17	Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors Applied Physics Letters ·Neil Moser, J. Gillespie, G. D. Via, A. Crespo, 舘野正夫, Gregg H. Jessen, Robert Fitch, B. Luo, F. Ren, F. Ren, A. H. Onstine, C. R. Abernathy, S. J. Pearton	2003	16
18	Microwave power heterojunction bipolar transistors fabricated with thermal shunt and bathtub C. Bozada, Douglas W. Barlage, A M Al Akwaa, R. Dettmer, M. Mack, J. Sewell, G. D. Via, Bernard Everett, Reza Eghtefari, J.J. Komiak	2002	2
19	Effects of Sc₂O₃ and MgO passivation layers on the output power of AlGaN/GaN HEMTs IEEE Electron Device Letters ·J. Gillespie, Robert Fitch, J. Sewell, R. Dettmer, G. D. Via, A. Crespo, T. Jenkins, B. Luo, R. Mehandru, J. Kim, F. Ren, F. Ren, A. H. Onstine, C. R. Abernathy, S. J. Pearton	2002	40
20	Electrical Profiles in GaN/Al₂O₃ Layers with Conductive Interface Regions MRS Internet Journal of Nitride Semiconductor Research ·D. C. Look, J. E. Hoelscher, Jeff L. Brown, G. D. Via	2001	6

About G. D. Via

G. D. Via is a scholar working on Condensed Matter Physics, Hardware and Architecture, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Structural Biology, having authored 67 papers that have together received 1.5k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (53 papers), Semiconductor materials and devices (31 papers), Silicon Carbide Semiconductor Technologies (23 papers), Ga2O3 and related materials (17 papers), Radio Frequency Integrated Circuit Design (9 papers), Metal and Thin Film Mechanics (9 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers) and Semiconductor Quantum Structures and Devices (6 papers). The work is most often cited by research in Condensed Matter Physics (1.2k citations), Electronic, Optical and Magnetic Materials (508 citations), Electrical and Electronic Engineering (1.2k citations), Atomic and Molecular Physics, and Optics (309 citations) and Materials Chemistry (366 citations). G. D. Via has collaborated with scholars based in United States, South Korea and United Kingdom. Frequent co-authors include J. Gillespie, Antonio Crespo, Gregg H. Jessen, Robert Fitch, Manuel Trejo, Eric R. Heller, Derrick Langley, Kelson D. Chabak, Dennis E. Walker and J. D. Blevins. Their work appears in journals such as IEEE Electron Device Letters, Solid-State Electronics, Microelectronics Reliability, Applied Physics Letters and physica status solidi (a).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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