P.C. Chao

3.4k total citations
136 papers, 2.5k citations indexed

About

P.C. Chao is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, P.C. Chao has authored 136 papers receiving a total of 2.5k indexed citations (citations by other indexed papers that have themselves been cited), including 133 papers in Electrical and Electronic Engineering, 84 papers in Atomic and Molecular Physics, and Optics and 48 papers in Condensed Matter Physics. Recurrent topics in P.C. Chao's work include Radio Frequency Integrated Circuit Design (77 papers), Semiconductor Quantum Structures and Devices (76 papers) and Semiconductor materials and devices (62 papers). P.C. Chao is often cited by papers focused on Radio Frequency Integrated Circuit Design (77 papers), Semiconductor Quantum Structures and Devices (76 papers) and Semiconductor materials and devices (62 papers). P.C. Chao collaborates with scholars based in United States, Sweden and Israel. P.C. Chao's co-authors include P.M. Smith, K.H.G. Duh, J. M. Ballingall, P. Ho, Ming-Yih Kao, A.A. Jabra, L. F. Lester, J.J. Komiak, A.J. Tessmer and James C. M. Hwang and has published in prestigious journals such as Applied Physics Letters, Applied Catalysis B: Environmental and IEEE Journal of Solid-State Circuits.

In The Last Decade

P.C. Chao

133 papers receiving 2.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P.C. Chao United States 28 2.3k 1.4k 724 203 139 136 2.5k
M. Mikulla Germany 23 1.8k 0.8× 707 0.5× 1.2k 1.7× 196 1.0× 120 0.9× 149 2.1k
Tetsuya Suemitsu Japan 20 1.3k 0.6× 718 0.5× 477 0.7× 386 1.9× 339 2.4× 154 1.6k
Iain Thayne United Kingdom 23 1.5k 0.6× 751 0.5× 352 0.5× 407 2.0× 309 2.2× 174 1.8k
J.A. Higgins United States 23 1.7k 0.7× 744 0.5× 752 1.0× 196 1.0× 222 1.6× 111 2.0k
K. Joshin Japan 24 1.6k 0.7× 503 0.4× 1.0k 1.4× 197 1.0× 91 0.7× 94 1.8k
Kozo Makiyama Japan 21 1.2k 0.5× 370 0.3× 722 1.0× 143 0.7× 75 0.5× 96 1.4k
Niklas Rorsman Sweden 31 2.8k 1.2× 769 0.6× 1.8k 2.5× 496 2.4× 210 1.5× 199 3.2k
H.L. Hartnagel Germany 21 1.6k 0.7× 867 0.6× 131 0.2× 333 1.6× 278 2.0× 178 1.9k
Raymond S. Pengelly United Kingdom 13 1.6k 0.7× 284 0.2× 814 1.1× 153 0.8× 103 0.7× 53 1.8k
H. Kröger United States 19 511 0.2× 511 0.4× 478 0.7× 135 0.7× 117 0.8× 51 916

Countries citing papers authored by P.C. Chao

Since Specialization
Citations

This map shows the geographic impact of P.C. Chao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.C. Chao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.C. Chao more than expected).

Fields of papers citing papers by P.C. Chao

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.C. Chao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.C. Chao. The network helps show where P.C. Chao may publish in the future.

Co-authorship network of co-authors of P.C. Chao

This figure shows the co-authorship network connecting the top 25 collaborators of P.C. Chao. A scholar is included among the top collaborators of P.C. Chao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P.C. Chao. P.C. Chao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chao, P.C., José Díaz, Ray Kallaher, et al.. (2016). GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz. MRS Advances. 1(2). 147–155. 27 indexed citations
2.
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4.
Cho, Jungwan, Daniel Francis, P.C. Chao, Mehdi Asheghi, & Kenneth E. Goodson. (2015). Cross-Plane Phonon Conduction in Polycrystalline Silicon Films. Journal of Heat Transfer. 137(7). 9 indexed citations
5.
Komiak, J.J., et al.. (2011). Decade bandwidth 2 to 20 GHz GaN HEMT power amplifier MMICs in DFP and No FP technology. 2011 IEEE MTT-S International Microwave Symposium. 1–4. 44 indexed citations
6.
Xu, D., Xiaoping Yang, K. Chu, et al.. (2011). 50-NM SELF-ALIGNED HIGH ELECTRON-MOBILITY TRANSISTORS ON GaAs SUBSTRATES WITH EXTREMELY HIGH EXTRINSIC TRANSCONDUCTANCE AND HIGH GAIN. International Journal of High Speed Electronics and Systems. 20(3). 393–398. 3 indexed citations
7.
Yang, Xu, J. Dí­az-Reyes, Jack P. Lombardi, et al.. (2006). The First 0.1μm 6” GaAs PHEMT MMIC Process. 1 indexed citations
8.
Hu, Wenrui, et al.. (2002). Reliability of state-of-the-art GaAs pseudomorphic low-noise HEMTs. 7. 191–194. 8 indexed citations
9.
Kao, Ming-Yih, P.M. Smith, P.C. Chao, & P. Ho. (2002). Millimeter wave power performance of InAlAs/InGaAs/InP HEMTs. 469–477. 7 indexed citations
10.
Alamo, Jesús A. del, et al.. (2002). Hydrogen degradation in InP HEMTs. DSpace@MIT (Massachusetts Institute of Technology). 231–234. 11 indexed citations
11.
Duh, K.H.G., et al.. (2002). High performance Q-band 0.15 mu m InGaAs HEMT MMIC LNA. 99–102. 5 indexed citations
12.
Somerville, Mark, et al.. (1999). On-state breakdown in power HEMTs: measurements and modeling. IEEE Transactions on Electron Devices. 46(6). 1087–1093. 42 indexed citations
13.
Chao, P.C., et al.. (1997). Ti-gate metal induced PHEMT degradation in hydrogen. IEEE Electron Device Letters. 18(9). 441–443. 21 indexed citations
14.
Ho, P., Ming-Yih Kao, P.C. Chao, et al.. (1991). Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTs. Electronics Letters. 27(4). 325–327. 82 indexed citations
15.
Smith, P.M., et al.. (1990). Microwave and mm-wave power amplification using pseudomorphic HEMTs. Microwave journal. 33. 71. 32 indexed citations
16.
Smith, P.M., L. F. Lester, P.C. Chao, et al.. (1989). A 0.25- mu m gate-length pseudomorphic HFET with 32-mW output power at 94 GHz. IEEE Electron Device Letters. 10(10). 437–439. 18 indexed citations
17.
Smith, Peter G., L. F. Lester, P.C. Chao, et al.. (1987). Millimeter wave double heterojunction pseudomorphic power HEMTs. 854–856. 20 indexed citations
18.
Palmateer, S. C., Umesh K. Mishra, P.C. Chao, et al.. (1986). Effect of epitaxial layer design on the microwave performance of high electron mobility transistors. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 4(2). 618–621. 2 indexed citations
19.
Henderson, T., M.I. Aksun, C. K. Peng, et al.. (1986). Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor. IEEE Electron Device Letters. 7(12). 649–651. 90 indexed citations
20.
Chao, P.C., et al.. (1981). Modulation-doped MBE GaAs/n-AlxGa1-xAs MESFETs. IEEE Electron Device Letters. 2(1). 14–15. 29 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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