J. Sewell

741 total citations
45 papers, 601 citations indexed

About

J. Sewell is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J. Sewell has authored 45 papers receiving a total of 601 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 19 papers in Condensed Matter Physics and 11 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J. Sewell's work include GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (15 papers) and Radio Frequency Integrated Circuit Design (14 papers). J. Sewell is often cited by papers focused on GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (15 papers) and Radio Frequency Integrated Circuit Design (14 papers). J. Sewell collaborates with scholars based in United States, Germany and Japan. J. Sewell's co-authors include T. Jenkins, J. Gillespie, Robert Fitch, F. Ren, S. J. Pearton, B. Luo, R. Dettmer, F. Ren, C. R. Abernathy and D. Via and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

J. Sewell

40 papers receiving 577 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Sewell United States 11 503 401 200 134 127 45 601
K. Tsubaki Japan 15 449 0.9× 443 1.1× 222 1.1× 454 3.4× 203 1.6× 60 784
S. Kaiser Germany 11 232 0.5× 186 0.5× 86 0.4× 172 1.3× 190 1.5× 18 396
J. Mittereder United States 16 499 1.0× 395 1.0× 158 0.8× 241 1.8× 141 1.1× 42 654
S. Kijima Japan 11 382 0.8× 360 0.9× 79 0.4× 381 2.8× 198 1.6× 27 606
Jaakko Sormunen Finland 11 316 0.6× 292 0.7× 107 0.5× 167 1.2× 84 0.7× 22 428
Hajime Fujikura Japan 18 486 1.0× 423 1.1× 242 1.2× 351 2.6× 301 2.4× 65 803
Ł. Macht Netherlands 13 202 0.4× 377 0.9× 197 1.0× 68 0.5× 203 1.6× 23 434
Tobias Meisch Germany 12 152 0.3× 334 0.8× 135 0.7× 151 1.1× 182 1.4× 40 415
A. Fontserè Spain 13 305 0.6× 289 0.7× 143 0.7× 92 0.7× 86 0.7× 25 415
Kamran Forghani United States 15 274 0.5× 279 0.7× 138 0.7× 228 1.7× 202 1.6× 44 531

Countries citing papers authored by J. Sewell

Since Specialization
Citations

This map shows the geographic impact of J. Sewell's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Sewell with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Sewell more than expected).

Fields of papers citing papers by J. Sewell

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Sewell. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Sewell. The network helps show where J. Sewell may publish in the future.

Co-authorship network of co-authors of J. Sewell

This figure shows the co-authorship network connecting the top 25 collaborators of J. Sewell. A scholar is included among the top collaborators of J. Sewell based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Sewell. J. Sewell is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Royter, Y., Pamela Patterson, K. Elliott, et al.. (2009). Dense heterogeneous integration for InP Bi-CMOS technology. 105–110. 10 indexed citations
2.
Kang, B. S., F. Ren, Robert Fitch, et al.. (2004). Annealing temperature stability of Ir and Ni-based Ohmic contacts on AlGaN∕GaN high electron mobility transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(6). 2635–2639. 5 indexed citations
3.
Ren, F., B. Luo, J. Kim, et al.. (2003). Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface. MRS Proceedings. 764. 1 indexed citations
4.
Jessen, Gregg H., Robert Fitch, J. Gillespie, et al.. (2003). High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC. IEEE Electron Device Letters. 24(11). 677–679. 15 indexed citations
5.
Luo, B., Jihyun Kim, F. Ren, et al.. (2003). Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors. Applied Physics Letters. 82(9). 1428–1430. 33 indexed citations
6.
Luo, B., F. Ren, K. K. Allums, et al.. (2003). Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors. Solid-State Electronics. 47(6). 1015–1020. 28 indexed citations
7.
Luo, B., R. Mehandru, Jihyun Kim, et al.. (2003). High three-terminal breakdown voltage and output power of Sc 2 O 3 passivated AlGaN/GaN high electron mobility transistors. Electronics Letters. 39(10). 809–810. 3 indexed citations
8.
9.
Bozada, C., Douglas W. Barlage, R. Dettmer, et al.. (2002). Microwave power heterojunction bipolar transistors fabricated with thermal shunt and bathtub. 155–158. 2 indexed citations
10.
Gillespie, J., Robert Fitch, J. Sewell, et al.. (2002). Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs. IEEE Electron Device Letters. 23(9). 505–507. 40 indexed citations
11.
Neuburger, Martin, I. Daumiller, M. Kunze, et al.. (2002). The Role of Charge Dipoles in GaN HFET Design. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 86–89. 5 indexed citations
12.
Liou, L.L., Douglas W. Barlage, C. Bozada, et al.. (2002). Thermal analysis and characterization of thermally shunted AlGaAs/GaAs heterojunction bipolar transistors. 563–572. 4 indexed citations
13.
Fitch, Robert, R. Dettmer, J. Gillespie, et al.. (2002). Thermal studies on heterostructure bipolar transistors using electroluminescence. 45–50. 4 indexed citations
14.
Bozada, C., G. DeSalvo, R. Dettmer, et al.. (1997). “Safe” solvent resist process for sub-quarter micron T-gates. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 15(6). 2916–2920. 2 indexed citations
15.
Anholt, R., C. Bozada, G. DeSalvo, et al.. (1997). Base and collector resistances in heterojunction bipolar transistors. Solid-State Electronics. 41(11). 1739–1743. 2 indexed citations
16.
Anholt, R., C. Bozada, R. Dettmer, et al.. (1996). Measuring, modeling, and minimizing capacitances in heterojunction bipolar transistors. Solid-State Electronics. 39(7). 961–963. 4 indexed citations
17.
Winzer, Stephen R., et al.. (1996). <title>Use of smart materials in medical diagnostics</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2721. 292–302. 1 indexed citations
18.
Sewell, J., et al.. (1992). Single-cycle lithography process for both large and sub-half-micron features (Poster Paper). Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1671. 177–177. 1 indexed citations
19.
Look, D. C., et al.. (1989). A new technique for whole-wafer etch-pit density mapping in GaAs. Journal of Applied Physics. 65(3). 1375–1377. 3 indexed citations
20.
Sewell, J., Scott C. Dudley, M. G. Mier, D. C. Look, & D. C. Walters. (1989). Automated and calibrated whole wafer etch pit density measurements in GaAs. Journal of Electronic Materials. 18(2). 191–197. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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