Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies
if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the
same subfield and year (this is the minimum needed to enter the top 1%, not the average
within it), or reaches the top citation threshold in at least one of its specific research
topics.
Strain-related phenomena in GaN thin films
1996764 citationsM. D. Bremser, R. F. Davis et al.profile →
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
1997547 citationsM. D. Bremser, Tsvetanka Zheleva et al.Applied Physics Lettersprofile →
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
1997410 citationsTsvetanka Zheleva, M. D. Bremser et al.Applied Physics Lettersprofile →
A critical review of ohmic and rectifying contacts for silicon carbide
1995350 citationsLisa M. Porter, R. F. Davisprofile →
III-V nitrides for electronic and optoelectronic applications
Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
1988189 citationsR. F. Davis, Hoyoul Kong et al.profile →
Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001)
1994188 citationsR. F. Davis, R. J. Nemanich et al.Applied Physics Lettersprofile →
Peers — A (Enhanced Table)
Peers by citation overlap · career bar shows stage (early→late)
cites ·
hero ref
This map shows the geographic impact of R. F. Davis's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. F. Davis with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. F. Davis more than expected).
This network shows the impact of papers produced by R. F. Davis. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. F. Davis. The network helps show where R. F. Davis may publish in the future.
Co-authorship network of co-authors of R. F. Davis
This figure shows the co-authorship network connecting the top 25 collaborators of R. F. Davis.
A scholar is included among the top collaborators of R. F. Davis based on the total number of
citations received by their joint publications. Widths of edges
represent the number of papers authors have co-authored together.
Node borders
signify the number of papers an author published with R. F. Davis. R. F. Davis is excluded from
the visualization to improve readability, since they are connected to all nodes in the network.
Roskowski, A. M., et al.. (2002). Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy. Opto-Electronics Review. 262–270.2 indexed citations
9.
Davis, R. F., Thomas Gehrke, K. J. Linthicum, et al.. (2001). Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and Si(111) substrates. Zeitschrift für Metallkunde. 92(2). 163–166.
10.
Roberson, S. L., et al.. (1997). Shock Compaction of Molybdenum Nitride Powder. APS.1 indexed citations
11.
Bergman, Leah, M. D. Bremser, J. A. Christman, et al.. (1997). Raman Analysis of Electron-Phonon Interaction in GaN Films. APS March Meeting Abstracts.
Wortman, Jennifer R., J. Narayan, Sunghyun Choi, et al.. (1987). Section News. MRS Bulletin. 12(2). 74–75.1 indexed citations
17.
Palmour, John W., et al.. (1986). Dry etching of beta-SiC in CF4 and CF4 + O2 mixtures. Journal of Vacuum Science and Technology. 4.2 indexed citations
18.
Davis, R. F. & Hans H. Stadelmaier. (1983). Fundamental studies of growth, doping and transformation in beta silicon carbide. Defense Technical Information Center (DTIC).1 indexed citations
Davis, R. F., et al.. (1975). FABRICATION OF CERAMIC ARTICLES FROM MINING WASTE MATERIALS. American Ceramic Society bulletin. 54(3).2 indexed citations
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive
bibliographic database. While OpenAlex provides broad and valuable coverage of the global
research landscape, it—like all bibliographic datasets—has inherent limitations. These include
incomplete records, variations in author disambiguation, differences in journal indexing, and
delays in data updates. As a result, some metrics and network relationships displayed in
Rankless may not fully capture the entirety of a scholar's output or impact.