Stephen E. Tetlak

1.7k total citations · 1 hit paper
21 papers, 1.5k citations indexed

About

Stephen E. Tetlak is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Stephen E. Tetlak has authored 21 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 13 papers in Materials Chemistry and 11 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Stephen E. Tetlak's work include Ga2O3 and related materials (11 papers), ZnO doping and properties (11 papers) and Electronic and Structural Properties of Oxides (7 papers). Stephen E. Tetlak is often cited by papers focused on Ga2O3 and related materials (11 papers), ZnO doping and properties (11 papers) and Electronic and Structural Properties of Oxides (7 papers). Stephen E. Tetlak collaborates with scholars based in United States, Germany and South Korea. Stephen E. Tetlak's co-authors include Kelson D. Chabak, Kevin Leedy, Gregg H. Jessen, Andrew J. Green, Antonio Crespo, Robert Fitch, G. Wagner, Eric R. Heller, Zbigniew Galazka and M. Baldini and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Journal of Crystal Growth.

In The Last Decade

Stephen E. Tetlak

21 papers receiving 1.4k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga₂O₃MOSFETs

2016 474 citations Andrew J. Green, Kelson D. Chabak et al. IEEE Electron Device Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Stephen E. Tetlak United States	14	1.3k	1.3k	529	366	263	21	1.5k
Quang Tu Thieu Japan	18	1.7k 1.3×	1.6k 1.3×	836 1.6×	313 0.9×	221 0.8×	33	1.8k
Onur S. Koksaldi United States	12	733 0.6×	673 0.5×	373 0.7×	252 0.7×	276 1.0×	15	871
Md Rezaul Karim United States	15	844 0.7×	906 0.7×	508 1.0×	250 0.7×	125 0.5×	28	1.0k
Daivasigamani Krishnamurthy Japan	8	874 0.7×	865 0.7×	384 0.7×	222 0.6×	127 0.5×	24	954
Partha Mukhopadhyay India	15	522 0.4×	519 0.4×	250 0.5×	254 0.7×	229 0.9×	43	714
Sanyam Bajaj United States	16	920 0.7×	642 0.5×	230 0.4×	584 1.6×	745 2.8×	23	1.2k
M. Baldini Germany	15	2.4k 1.9×	2.4k 1.9×	1.3k 2.5×	414 1.1×	182 0.7×	28	2.5k
Ankush Bag India	16	416 0.3×	441 0.3×	191 0.4×	304 0.8×	218 0.8×	64	681
M. P. Scheglov Russia	14	456 0.4×	451 0.4×	232 0.4×	231 0.6×	83 0.3×	60	608
Alexandros Kyrtsos United States	6	420 0.3×	433 0.3×	212 0.4×	136 0.4×	108 0.4×	13	513

Countries citing papers authored by Stephen E. Tetlak

Since Specialization

Citations

This map shows the geographic impact of Stephen E. Tetlak's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Stephen E. Tetlak with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Stephen E. Tetlak more than expected).

Fields of papers citing papers by Stephen E. Tetlak

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Stephen E. Tetlak. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Stephen E. Tetlak. The network helps show where Stephen E. Tetlak may publish in the future.

Co-authorship network of co-authors of Stephen E. Tetlak

This figure shows the co-authorship network connecting the top 25 collaborators of Stephen E. Tetlak. A scholar is included among the top collaborators of Stephen E. Tetlak based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Stephen E. Tetlak. Stephen E. Tetlak is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Islam, Ahmad E., Hanwool Lee, Michael Snure, et al.. (2024). Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length. IEEE Transactions on Electron Devices. 71(3). 1805–1811. 16 indexed citations

Islam, Ahmad E., Kevin Leedy, Sabyasachi Ganguli, et al.. (2022). Thermal stability of ALD-grown SiO₂ and Al₂O₃ on (010) β-Ga₂O₃ substrates. 1–2. 1 indexed citations

Islam, Ahmad E., Chenyu Zhang, David A. Muller, et al.. (2022). Defect Engineering at the Al₂O₃/(010)β-Ga₂O₃Interface via Surface Treatments and Forming Gas Post-Deposition Anneals. IEEE Transactions on Electron Devices. 69(10). 5656–5663. 14 indexed citations

Liddy, Kyle J., Nolan S. Hendricks, Andrew J. Green, et al.. (2019). Self-Aligned Gate Thin-Channel β-Ga₂O₃MOSFETs. 219–220. 2 indexed citations

Liddy, Kyle J., Andrew J. Green, Nolan S. Hendricks, et al.. (2019). Thin channel β-Ga₂O₃ MOSFETs with self-aligned refractory metal gates. Applied Physics Express. 12(12). 126501–126501. 41 indexed citations

Chabak, Kelson D., Dennis E. Walker, Antonio Crespo, et al.. (2018). Sub-Micron Gallium Oxide Radio Frequency Field-Effect Transistors. 1–3. 40 indexed citations

Leedy, Kevin, Kelson D. Chabak, Vladimir Vasilyev, et al.. (2017). Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition. Applied Physics Letters. 111(1). 141 indexed citations

Chabak, Kelson D., Jonathan P. McCandless, Neil Moser, et al.. (2017). Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs. IEEE Electron Device Letters. 39(1). 67–70. 214 indexed citations

Chabak, Kelson D., Neil Moser, Andrew J. Green, et al.. (2016). Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage. Applied Physics Letters. 109(21). 307 indexed citations

10.

Moser, Neil, Antonio Crespo, Stephen E. Tetlak, et al.. (2016). Investigation of thermal effects in β-Ga₂O₃ MOSFET using pulsed IV. 1–2. 2 indexed citations

11.

Green, Andrew J., Kelson D. Chabak, Eric R. Heller, et al.. (2016). 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga₂O₃MOSFETs. IEEE Electron Device Letters. 37(7). 902–905. 474 indexed citations breakdown →

12.

Anwand, W., A. Wagner, F. A. Selim, et al.. (2016). Induced conductivity in sol-gel ZnO films by passivation or elimination of Zn vacancies. AIP Advances. 6(9). 29 indexed citations

13.

Coutu, Ronald A., Eric R. Heller, C. Bozada, et al.. (2016). Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing. Electronics. 5(3). 32–32. 11 indexed citations

14.

Selim, F. A., Kevin Leedy, Stephen E. Tetlak, et al.. (2016). Effects of Substrate and Post-Growth Treatments on the Microstructure and Properties of ZnO Thin Films Prepared by Atomic Layer Deposition. Journal of Electronic Materials. 45(12). 6337–6345. 9 indexed citations

15.

Schuette, Michael L., Andrew J. Green, Kevin Leedy, et al.. (2016). Ionic Metal–Oxide TFTs for Integrated Switching Applications. IEEE Transactions on Electron Devices. 63(5). 1921–1927. 9 indexed citations

16.

Fitch, Robert, Dennis E. Walker, Andrew J. Green, et al.. (2015). Implementation of High-Power-Density <inline-formula> <tex-math notation="LaTeX">$X$ </tex-math></inline-formula>-Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process. IEEE Electron Device Letters. 36(10). 1004–1007. 50 indexed citations

17.

Via, G. D., J. D. Blevins, Kelson D. Chabak, et al.. (2014). Wafer‐scale GaN HEMT performance enhancement by diamond substrate integration. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 11(3-4). 871–874. 28 indexed citations

18.

Tetlak, Stephen E., et al.. (2014). Recent Progress in GaN-on-Diamond Device Technology. 20 indexed citations

19.

Liu, Lu, Chien-Fong Lo, Yuyin Xi, et al.. (2013). Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 31(2). 30 indexed citations

20.

Snure, Michael, Rita D. Peterson, Robert F. Bedford, et al.. (2012). Epitaxial growth of quasi-phase matched GaP for nonlinear applications: Systematic process improvements. Journal of Crystal Growth. 352(1). 72–77. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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