A. Saxler

4.6k citations

87 papers · 3.8k indexed · 1 hit paper · h-index 28

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 69
- GaN-based semiconductor devices and materials 69
Electronic, Optical and Magnetic Materials 42
- Ga2O3 and related materials 37

Co-authors: Patrick Kung Umesh K. Mishra P. Parikh M. Moore T. Wisleder Yifeng Wu D. Walker Manijeh Razeghi
Journals: Applied Physics Letters (17 papers)Journal of Applied Physics (15 papers)Journal of Crystal Growth (3 papers)Japanese Journal of Applied Physics (2 papers)MRS Internet Journal of Nitride Semiconductor Research (2 papers)
Partner nations: United States South Korea United Kingdom

In The Last Decade

A. Saxler

83 papers receiving 3.6k citations

Hit Papers

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30-W/mm GaN HEMTs by Field Plate Optimization 2004 · 881 citations

Peers

Countries citing papers authored by A. Saxler

Since Specialization

Citations

This map shows the geographic impact of A. Saxler's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Saxler with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Saxler more than expected).

Fields of papers citing papers by A. Saxler

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Saxler. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Saxler. The network helps show where A. Saxler may publish in the future.

Co-authorship network

The 25 scholars most cited alongside A. Saxler, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Saxler Line = papers co-authored together A. Saxler links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A Carbon Capture and Utilization Process for the Production of Solid Carbon Materials from Atmospheric CO₂ – Part 1: Process Performance ChemSusChem ·С Н Воронина, Peter Pfeifer, Benjamin Dietrich, Amélie Amblard, Chengrong Wang, A. Saxler, Courtney Marie Chennault, Leonid Stoppel, Thomas Wetzel	2024	1
2	High-Efficiency Amplifiers Using AlGaN/GaN HEMTs on SiC S.T. Sheppard, Eui-Seok Byeon, R.P. Smith, A. Saxler, Scott T. Allen, M. E. Bilov, Yu. A. Danilcheva	2006	7
3	Linearity performance of GaN HEMTs with field plates Yifeng Wu, A. Saxler, T. Wisleder, M. Moore, R.P. Smith, S.T. Sheppard, P. Chavarkar, P. Parikh	2004	11
4	Emission and reflection spectra from AlxGa1−xN/GaN single heterostructures Journal of Applied Physics ·D. C. Reynolds, J. E. Hoelscher, C. W. Litton, T. C. Collins, Robert Fitch, G. D. Via, J. Gillespie, A. Crespo, T. Jenkins, A. Saxler	2003	1
5	EPR and photoluminescence studies of semi-insulating 4H-SiC samples Physica B Condensed Matter ·Ekaterina N. Kalabukhova, M. Alvarez, W. C. Mitchel, A. Saxler, Robert Jones	2001	7
6	Type-II InAs/InGaSb SL photodetectors Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Chi‐Wei Lin, K.A. Anselm, C. Boussard-Plédel, H Rångtell, Gail J. Brown, 伸六小松, A. Saxler, Jon Rau, Frank Szmulowicz, Vaidya Nathan	2000	9
7	Electrical transport of an AlGaN/GaN two-dimensional electron gas MRS Internet Journal of Nitride Semiconductor Research ·A. Saxler, P. Debray, R. Perrin, S. Elhamri, W. C. Mitchel, C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, J. P. Ibbetson, S. Keller, P. M. Petroff, Steven P. DenBaars, Umesh K. Mishra, James S. Speck	2000	1
8	MicroRaman and Hall Effect Study of n-Type Bulk 4H-SiC Materials science forum ·Robert F. Sommer, Juan F. Jiménez, Enrique del Teso Martín, W. C. Mitchel, A. Saxler, R. Perrin	2000	2
9	Growth and characterization of very long wavelength type-II infrared detectors Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Hooman Mohseni, Abbès Tahraoui, Mustapha Issah, Manijeh Razeghi, W. C. Mitchel, A. Saxler	2000	10
10	Exploration of LP-MOCVD grown III-nitrides on various substrates PhDT ·A. Saxler	1998	1
11	Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Manijeh Razeghi, A. Saxler, Patrick Kung, D. Walker, Xiaolong Zhang, Li QiHan, Yongchun Xiao, Pamela Selorm, C. Rafael René Suárez Fuentes	1998	2
12	GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition MRS Internet Journal of Nitride Semiconductor Research ·Patrick Kung, A. Saxler, D. Walker, Li QiHan, Xiaolong Zhang, J. Diaz, Manijeh Razeghi	1998	40
13	Determination of the band-gap energy of Al1−xInxN grown by metal–organic chemical-vapor deposition Applied Physics Letters ·Muchiri Manson Kariuki, A. Saxler, Patrick Kung, M. Razeghi, K. Y. Lim	1997	103
14	Morphology of twinned GaN grown on (11·0) sapphire substrates Solid-State Electronics ·Tomohisa Kato, Patrick Kung, A. Saxler, C. J. Sun, Hitoshi Ohsato, Manijeh Razeghi, Takashi Okuda	1997	6
15	Observation of room temperature surface-emitting stimulated emission from GaN:Ge by optical pumping Journal of Applied Physics ·A. Suba-Chyus, Patrick Kung, A. Saxler, D. Walker, M. Razeghi	1996	13
16	Metalorganic chemical vapor deposition of monocrystalline GaN thin films on β-LiGaO2 substrates Applied Physics Letters ·Patrick Kung, A. Saxler, Geimmy Vanessa Ortiz Zabala, D. Walker, H. D. Austin, Manijeh Razeghi	1996	53
17	MOVPE Growth of High Electron Mobility AlGaN/GaN Heterostructures MRS Proceedings ·Joan M. Redwing, J.S. Flynn, M. A. Tischler, W. C. Mitchel, A. Saxler	1995	17
18	High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates Applied Physics Letters ·Patrick Kung, A. Saxler, A. Vinke, D. Walker, Sofie Jaeger, Ian T. Ferguson, Manijeh Razeghi	1995	145
19	Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates Journal of Applied Physics ·Patrick Kung, C. J. Sun, A. Saxler, Hitoshi Ohsato, M. Razeghi	1994	77
20	A crystallographic model of (00⋅1) aluminum nitride epitaxial thin film growth on (00⋅1) sapphire substrate Journal of Applied Physics ·C. J. Sun, Patrick Kung, A. Saxler, Hitoshi Ohsato, M. N. Hoyna, Manijeh Razeghi	1994	87

About A. Saxler

A. Saxler is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry, having authored 87 papers that have together received 3.8k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (69 papers), Ga2O3 and related materials (37 papers), Semiconductor materials and devices (25 papers), ZnO doping and properties (21 papers), Semiconductor Quantum Structures and Devices (20 papers), Silicon Carbide Semiconductor Technologies (14 papers), Radio Frequency Integrated Circuit Design (7 papers) and Acoustic Wave Resonator Technologies (7 papers). The work is most often cited by research in Condensed Matter Physics (3.2k citations), Electronic, Optical and Magnetic Materials (1.5k citations), Electrical and Electronic Engineering (2.1k citations), Atomic and Molecular Physics, and Optics (1.0k citations) and Materials Chemistry (1.1k citations). A. Saxler has collaborated with scholars based in United States, South Korea and United Kingdom. Frequent co-authors include Patrick Kung, Umesh K. Mishra, P. Parikh, M. Moore, T. Wisleder, Yifeng Wu, D. Walker, Manijeh Razeghi, W. C. Mitchel and R.P. Smith. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Crystal Growth, Japanese Journal of Applied Physics and MRS Internet Journal of Nitride Semiconductor Research.

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